2SC4927
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
V
CES
1500
V
Emitter to base voltage
V
EBO
6
V
Collector current
I
C
8
A
Collector peak current
I
C(peak)
9
A
Collector surge current
I
C(surge)
18
A
Collector power dissipation
P
C
*
1
50
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
C to E diode forward current
I
D
8
A
Note:
1. Value at T
C
= 25C.
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Emitter to base breakdown
voltage
V
(BR)EBO
6
--
--
V
I
E
= 500 mA, I
C
= 0
Collector cutoff current
I
CES
--
--
500
A
V
CE
= 1500 V, R
BE
= 0
DC current transfer ratio
h
FE
--
--
25
--
V
CE
= 5 V, I
C
= 1 A
Collector to emitter saturation
voltage
V
CE(sat)
--
--
5
V
I
C
= 6 A, I
B
= 1.2 A
Base to emitter saturation
voltage
V
BE(sat)
--
--
1.5
V
I
C
= 6 A, I
B
= 1.2 A
C to E diode forward voltage
V
ECF
--
--
2.0
V
I
F
= 8 A
Fall time
t
f
--
--
0.5
s
I
CP
= 6 A, I
B1
= 1.2 A,
I
B2
2.4 A, f
H
= 31.5 kHz
2SC4927
3
80
60
40
20
0
Collector Power Dissipation Pc (W)
50
100
150
200
Case Temperature Tc (
C)
Maximum Collector Power Dissipation Curve
20
16
12
8
4
400
800
1200
1600
2000
Collector Current I (A)
C
Collector to Emitter Voltage V (V)
Area of Safe Operation
CE
0
(100 V, 18 A)
(800 V, 4 A)
0.5 mA
f = 15.75 kHz
Ta = 25
C
For picture tube arcing
10
5
0
5
10
Collector to Emitter Voltage V (V)
Typical Output Characteristics
CE
Collector Current I (A)
C
I = 0
B
Tc = 25
C
0.2 A
0.6 A
0.4 A
1.4 A
0.8 A
1.0 A
1.2 A
1.6 A
1.8 A
2.0 A
2SC4927
6
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi's permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user's unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
U S A
Tel: 415-589-8300
Fax: 415-583-4207
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Strae 3
D-85622 Feldkirchen
Mnchen
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
PDF 
ZIP
