2SC4964
Silicon NPN Epitaxial
ADE-208-005
1st. Edition
Application
VHF / UHF RF switch
Features
Low Ron and high performance for RF switch.
Capable of high density mounting.
Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK
2SC4964
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
12
V
Collector to emitter voltage
V
CEO
8
V
Emitter to base voltage
V
EBO
3
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
12
--
--
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 10 V, I
E
= 0
I
CEO
--
--
1
mA
V
CE
= 8 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 3 V, I
C
= 0
DC current transfer ratio
h
FE
100
250
600
V
CE
= 5 V, I
C
= 5 mA
Collector to emitter saturation
voltage
V
CE(sat)
--
200
300
mV
I
C
= 80 mA, I
B
= 5 mA
Collector output capacitance
Cob
--
1.2
1.6
pF
V
CB
= 5 V, I
E
= 0, f = 1 MHz
On resistance
Ron
--
2.0
--
I
B
= 2.5 mA, f = 1 kHz
Note:
Marking is "YV".
2SC4964
3
150
100
50
Ambient Temperature Ta (
C)
0
150
50
100
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
500
400
300
200
100
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
1
2
5
10
20
50
0
100
V = 5V
CE
DC Current Transfer Ratio vs.
Collector Current
2.8
2.4
2.0
1.6
1.2
1
2
5
10
20
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
0.5
I = 0
f = 1 MHz
E
0.8
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Current I (mA)
C
1
2
5
10
20
50
100
2.0
1.6
1.2
0.8
0.4
Gain Bandwidth Product f (GHz)
T
0
V = 5V
CE
Gain Bandwidth Product vs.
Collector Current
2SC4964
4
Base Current I (mA)
B
On Resistance Ron ( )
0.1
0.2
0.5
1
2
5
1
10
2
10
3
4
6
8
f = 1kHz
On Resistance vs. Base Current
Vin
Vout
100
F
2nF
D.U.T.
V
B
2.7k
R1(1k )
Ron= R1
Vout
Vin-Vout
100
F
Ron test circuit
0
- 10
- 20
- 30
- 40
- 50
100
200
500
1000
Frequency f (MHz)
50
Signal Reduction Rs (dB)
V = 5V
B
V = 0
B
Signal Reduction vs. Frequency
INPUT
OUTPUT
33pF
33pF
2nF
L1
D.U.T.
L1 : Inside dia 3 mm ,
0.5 mm Enameled Copper Wire 7 Turns.
V
B
2.7k
Signal Reduction test circuit
2SC4964
5
0
- 10
- 20
- 30
- 40
- 50
100
200
500
1000
Frequency f (MHz)
50
Signal Reduction Rt (dB)
V = 5V
B
V = 0
B
Signal Reduction vs. Frequency
INPUT
OUTPUT
33pF
33pF
2nF
L2
V
B
D.U.T.
L1 , L2 : Inside dia 3 mm ,
0.5 mm Enameled Copper Wire 7 Turns.
L1
2.7k
Signal Reduction test circuit
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