2SC4988
Silicon NPN Epitaxial
ADE-208-004
1st. Edition
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
f
T
= 8.5 GHz Typ
High gain, low noise figure
PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz
Outline
UPAK
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
1
2
3
4
2SC4988
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
9
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
800*
1
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. This value is allowed when using the alumina ceramics board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
--
--
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 12 V, I
E
= 0
I
CEO
--
--
1
mA
V
CE
= 9 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
50
120
250
V
CE
= 5 V, I
C
= 20 mA
Collector output capacitance
Cob
--
1.1
1.6
pF
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
5.5
8.5
--
GHz
V
CE
= 5 V, I
C
= 20 mA
Power gain
PG
7.5
10.5
--
dB
V
CE
= 5 V, I
C
= 20 mA,
f = 900 MHz
Noise figure
NF
--
1.3
2.5
dB
V
CE
= 5 V, I
C
= 5 mA,
f = 900 MHz
Note:
Marking is "FR".
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2SC4988
3
1600
1200
800
400
0
Ambient Temperature Ta (
C)
50
100
150
200
Collector Power Dissipation Curve
Collector Power Dissipation Pc (mW)
(on the alumina ceramic board)
200
160
120
80
40
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
1
2
5
10
20
100
V = 5V
CE
0
50
DC Current Transfer Ratio
vs. Collector Current
12
10
8
6
4
2
Collector Current I (mA)
C
Gain Bandwidth Product f (GHz)
T
0
1
2
5
10
20
100
50
V = 5 V
CE
Gain Bandwidth Product
vs. Collector Current
1.8
1.6
1.4
1.2
1.0
1
2
5
10
20
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
0.5
0.8
I = 0
f = 1 MHz
E
Collector Output Capacitance vs.
Collector to Base Voltage
2SC4988
4
20
16
12
8
4
Power Gain PG (dB)
0
Collector Current I (mA)
C
1
2
5
10
20
100
50
V = 5V
f = 900 MHz
CE
Power Gain vs. Collector Current
5
4
3
2
1
Noise Figure NF (dB)
0
Collector Current I (mA)
C
1
2
5
10
20
100
50
V = 5V
f = 900MHz
CE
Noise Figure vs. Collector Current
20
16
12
8
4
S Parameter |S | (dB)
0
21
21
Collector Current I (mA)
C
1
2
5
10
20
100
50
V = 5V
f = 1 GHz
CE
S21 Parameter vs. Collector Current
2SC4988
5
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1.0
2
3 4 5
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
1.5
10
S11 Parameter vs. Frequency
Scale: 5 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S21 Parameter vs. Frequency
Scale: 0.01 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
S12 Parameter vs. Frequency
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1.0
2
3 4 5
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 20 mA)
C
C
1.5
10
S22 Parameter vs. Frequency
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