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Электронный компонент: 2SC4993

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2SC4993
Silicon NPN Epitaxial
ADE-208-011
1st. Edition
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
f
T
= 10.5 GHz Typ
High gain, low noise figure
PG = 16.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
1. Collector
2. Emitter
3. Base
4. Emitter
MPAK-4
1
4
3
2
2SC4993
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
8
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I
CBO
--
--
10
A
V
CB
= 15 V, I
E
= 0
I
CEO
--
--
1
mA
V
CE
= 8 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
50
120
250
V
CE
= 5 V, I
C
= 10 mA
Collector output capacitance
Cob
--
0.45
0.8
pF
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
7.5
10.5
--
GHz
V
CE
= 5 V, I
C
= 10 mA
Power gain
PG
13.5
16.5
--
dB
V
CE
= 5 V, I
C
= 10 mA,
f = 900 MHz
Noise figure
NF
--
1.2
2.5
dB
V
CE
= 5 V, I
C
= 5 mA,
f = 900 MHz
Note:
Marking is "YS".
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2SC4993
3
150
100
50
Ambient Temperature Ta (
C)
0
150
50
100
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
200
160
120
80
40
0
0.1
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
0.2
0.5 1
2
5
10 20
50
V = 5V
CE
V = 1V
CE
DC Current Transfer Ratio
vs. Collector Current
12
1
2
5
10
20
50
Collector Current I (mA)
C
Gain Bandwidth Product f (GHz)
T
10
8
6
4
2
0
V = 5 V
CE
V = 1 V
CE
Gain Bandwidth Product
vs. Collector Current
0.56
0.52
0.48
0.44
0.40
0.36
1
2
5
10
20
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
0.5
I = 0
E
f = 1 MHz
Collector Output Capacitance vs.
Collector to Base Voltage
2SC4993
4
20
16
12
8
4
0
0.3
Power Gain PG (dB)
Collector Current I (mA)
C
1
3
10
30
f = 900 MHz
V = 1V
CE
V = 5V
CE
Power Gain vs. Collector Current
5
4
3
2
1
0
Noise Figure NF (dB)
Collector Current I (mA)
C
0.3
1
3
10
30
f = 900 MHz
V = 5V
CE
V = 1V
CE
Noise Figure vs. Collector Current
2SC4993
5
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1.0
2
3 4 5
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
1.5
10
S11 Parameter vs. Frequency
Scale: 4 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
S21 Parameter vs. Frequency
Scale: 0.04 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
S12 Parameter vs. Frequency
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1.0
2
3 4 5
Condition: V = 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 5 mA)
(I = 10 mA)
C
C
1.5
10
S22 Parameter vs. Frequency
2SC4993
6
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1.0
2
3 4 5
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 1 mA)
(I = 2 mA)
C
C
1.5
10
S11 Parameter vs. Frequency
Scale: 2 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 1 mA)
(I = 2 mA)
C
C
S21 Parameter vs. Frequency
Scale: 0.05 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 1 mA)
(I = 2 mA)
C
C
S12 Parameter vs. Frequency
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1.0
2
3 4 5
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I = 1 mA)
(I = 2 mA)
C
C
1.5
10
S22 Parameter vs. Frequency
2SC4993
7
S Parameters (V
CE
= 5 V, I
C
= 5 mA, Z
O
= 50
)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.787
35.9
12.02
152.4
0.0390
70.3
0.903
22.7
400
0.655
65.4
9.86
132.8
0.0633
51.0
0.754
39.1
600
0.551
88.3
8.01
118.4
0.0782
51.0
0.626
49.8
800
0.472
106.4
6.54
108.4
0.0882
47.5
0.533
56.6
1000
0.423
123.2
5.52
100.3
0.0962
45.7
0.466
62.0
1200
0.385
136.2
4.72
94.0
0.103
45.5
0.422
65.8
1400
0.357
148.4
4.14
88.5
0.110
46.2
0.390
69.5
1600
0.347
159.6
3.68
83.6
0.117
46.2
0.367
72.8
1800
0.338
169.2
3.35
79.3
0.124
46.9
0.350
75.8
2000
0.340
177.5
3.04
74.9
0.131
47.1
0.337
79.4
S Parameters (V
CE
= 5 V, I
C
= 10 mA, Z
O
= 50
)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.659
52.2
17.36
144.0
0.0343
65.6
0.827
30.6
400
0.522
87.8
12.78
122.8
0.0518
54.8
0.625
47.7
600
0.445
114.3
9.68
109.7
0.0626
51.6
0.491
56.7
800
0.398
132.4
7.64
100.9
0.0706
51.2
0.409
61.8
1000
0.374
147.7
6.29
94.2
0.0789
51.8
0.356
65.6
1200
0.354
161.2
5.33
88.7
0.0872
53.0
0.322
68.5
1400
0.351
172.0
4.64
84.2
0.0953
54.4
0.299
71.5
1600
0.353
179.2
4.10
79.9
0.104
55.0
0.284
74.5
1800
0.351
171.1
3.70
76.3
0.113
55.4
0.273
77.4
2000
0.358
164.3
3.34
72.5
0.122
55.6
0.266
80.7
2SC4993
8
S Parameters (V
CE
= 1 V, I
C
= 1 mA, Z
O
= 50
)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.942
18.2
3.33
163.2
0.0570
76.8
0.976
14.2
400
0.888
36.5
3.16
148.5
0.105
65.2
0.923
25.9
600
0.817
52.2
2.86
135.0
0.143
55.5
0.857
36.2
800
0.737
65.6
2.62
123.3
0.170
47.4
0.789
45.6
1000
0.665
79.6
2.36
113.0
0.191
40.7
0.729
53.1
1200
0.604
91.6
2.15
103.5
0.204
35.6
0.676
59.6
1400
0.561
101.9
1.94
96.4
0.213
31.5
0.636
65.5
1600
0.523
112.1
1.79
89.9
0.220
28.0
0.600
70.7
1800
0.485
121.4
1.66
83.4
0.223
24.9
0.575
75.2
2000
0.467
130.5
1.54
77.6
0.224
22.5
0.553
79.8
S Parameters (V
CE
= 1 V, I
C
= 2 mA, Z
O
= 50
)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.890
26.2
6.17
158.9
0.0552
73.0
0.949
19.0
400
0.800
49.7
5.53
141.4
0.0967
60.0
0.854
35.0
600
0.701
69.1
4.76
127.4
0.125
50.3
0.751
46.8
800
0.614
85.9
4.14
115.8
0.143
43.3
0.658
56.7
1000
0.552
101.1
3.58
106.5
0.155
38.4
0.589
64.1
1200
0.498
114.3
3.16
98.2
0.164
35.1
0.530
70.4
1400
0.455
126.7
2.80
91.8
0.170
32.8
0.493
75.3
1600
0.430
137.2
2.52
95.2
0.175
30.8
0.461
80.2
1800
0.405
147.3
2.31
80.8
0.179
29.8
0.437
84.9
2000
0.402
156.7
2.12
75.6
0.181
28.9
0.417
89.1
0.16
0 0.1
+ 0.1
0.06
0.95
0.85
1.8
0.2
0.65
1.5
0.15
0.65
1.1
+ 0.2 0.1
0.95
0.95
1.9
0.2
2.95
0.2
0.4
+ 0.1
0.05
0.6
+ 0.1
0.05
2.8
+ 0.2 0.6
0.3
0.4
+ 0.1
0.05
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK-4
--
Conforms
0.013 g
Unit: mm
0.4
+ 0.1
0.05
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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: http:semiconductor.hitachi.com/
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: http://www.hitachi.co.jp/Sicd/indx.htm
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