Application
High frequency amplifier
Features
Excellent high frequency characteristics
f
T
= 1.2 GHz typ
Low output capacitance
Cob = 5.0 pF typ
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Rating
Unit
--------------------------------------------------------------------------------------
Collector to base voltage
V
CBO
30
V
--------------------------------------------------------------------------------------
Collector to emitter voltage
V
CEO
20
V
--------------------------------------------------------------------------------------
Emitter to base voltage
V
EBO
3.5
V
--------------------------------------------------------------------------------------
Collector current
I
C
0.3
A
--------------------------------------------------------------------------------------
Collector peak current
ic(peak)
0.5
A
--------------------------------------------------------------------------------------
Collector power dissipation
P
C
1
W
--------------------------------------------------------------------------------------
Collector power dissipation
P
C
*1
5
W
--------------------------------------------------------------------------------------
Junction temperature
Tj
150
C
--------------------------------------------------------------------------------------
Storage temperature
Tstg
55 to +150
C
--------------------------------------------------------------------------------------
Note: 1. Value at T
C
= 25C.
1
2
3
1. Emitter
2. Collector
3. Base
TO126FM
2SC5025
Silicon NPN Epitaxial
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
--------------------------------------------------------------------------------------
Collector to emitter
V
(BR)CEO
20
--
--
V
I
C
= 10 mA,
breakdown voltage
R
BE
=
--------------------------------------------------------------------------------------
Collector cutoff current
I
CBO
--
--
1.0
mA
V
CB
= 25 V,
I
E
= 0
--------------------------------------------------------------------------------------
Emitter cutoff current
I
EBO
--
--
1.0
mA
V
EB
= 3 V,
I
C
= 0
--------------------------------------------------------------------------------------
DC current
h
FE
40
--
200
V
CE
= 5 V,
transfer ratio
I
C
= 50 mA
--------------------------------------------------------------------------------------
Base to emitter voltage
V
BE
--
--
1.2
V
V
CE
= 5 V,
I
C
= 300 mA
--------------------------------------------------------------------------------------
Collector to emitter
V
CE(sat)
--
--
2.0
V
I
C
= 300 mA,
saturation voltage
I
B
= 60 mA
--------------------------------------------------------------------------------------
Gain bandwidth product
f
T
--
1.2
--
GHz
V
CE
= 5 V,
I
C
= 100 mA
--------------------------------------------------------------------------------------
Collector output capacitance
Cob
--
5.0
--
pF
V
CB
= 10 V,
I
E
= 0,
f = 1 MHz
--------------------------------------------------------------------------------------
Input capacitance
Cib
--
10
--
pF
V
EB
= 2 V,
I
C
= 0,
f = 1 MHz
--------------------------------------------------------------------------------------
See characteristic curves of 2SC3652.
2SC5025
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