4AJ11
Silicon P-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance
R
DS(on)
0.13 , V
GS
= 10 V, I
D
= 4 A
R
DS(on)
0.17 , V
GS
= 4 V, I
D
= 4 A
Capable of 4 V gate drive
Low drive current
High speed switching
High density mounting
Suitable for motor driver and solenoid driver and lamp driver
4AJ11
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
250
A
V
DS
= 50 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
--
0.09
0.13
I
D
= 4 A
V
GS
= 10 V*
1
--
0.12
0.17
I
D
= 4 A
V
GS
= 4 V*
1
Forward transfer admittance
|y
fs
|
5.5
7.7
--
S
I
D
= 4 A
V
DS
= 10 V*
1
Input capacitance
Ciss
--
1400
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
720
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
220
--
pF
f = 1 MHz
Turn-on delay time
t
d(on)
--
15
--
ns
I
D
= 8 A
Rise time
t
r
--
120
--
ns
V
GS
= 10 V
Turn-off delay time
t
d(off)
--
220
--
ns
R
L
= 3.75
Fall time
t
f
--
160
--
ns
Body to drain diode forward
voltage
V
DF
--
1.05
--
V
I
F
= 8 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
190
--
s
I
F
= 8 A, V
GS
= 0,
dIF/dt = 50 A/
s
Note:
1. Pulse Test
4AJ11
4
6
4
2
0
50
100
150
Ambient Temperature Ta (C)
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
each die is is idetical
Condition : Channel dissipation of
Maximum Channel Dissipation Curve
Collector Power Dissipation Pch (W)
30
20
10
0
50
100
150
Case Temperature Tc (C)
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
each die is is idetical
Condition : Channel dissipation of
Maximum Channel Dissipation Curve
Collector Power Dissipation Pch (W)
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