2SC5237
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
Excellent high frequency characteristics
f
T
= 400 MHz typ
High voltage and low output capacitance
V
CEO
= 250 V, Cob = 3.5 pF typ
Suitable for wide band video amplifier
Outline
1. Emitter
2. Collector
3. Base
TO-126FM
1
2
3
2SC5237
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
250
V
Collector to emitter voltage
V
CEO
250
V
Emitter to base voltage
V
EBO
3
V
Collector current
I
C
150
mA
Collector peak current
I
C(peak)
300
mA
Collector power dissipation
P
C
1.4
W
8*
1
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. T
C
= 25C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
250
--
--
V
I
C
= 10 A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
250
--
--
V
I
C
= 1 mA, R
BE
=
Collector cutoff current
I
CBO
--
--
1.0
A
V
CB
= 200 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 3 V, I
C
= 0
DC current transfer ratio
h
FE
*
1
60
--
200
--
V
CE
= 10 V, I
C
= 10 mA
Base to emitter voltage
V
BE
--
--
1.0
V
V
CE
= 10 V, I
C
= 50 mA
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1.0
V
I
C
= 50 mA, I
B
= 5 mA
Gain bandwidth product
f
T
300
400
--
MHz
V
CE
= 30 V, I
C
= 50 mA
Collector output capacitance
Cob
--
3.5
5.0
pF
V
CB
= 30 V, I
E
= 0, f = 1 MHz
Note:
1. The 2SC2537 is grouped by h
FE
and its specification is as follows.
B
C
60 to 120
100 to 200
2SC5237
3
8
6
4
2
0
Ambient Temperature Ta (
C)
Collector Power Dissipation Pc (W)
50
100
150
200
1.4W
Ta
Tc
Case Temperature Tc (
C)
Maximum Collector Dissipation Curve
Collector to Emitter Voltage V (V)
CE
Collector Current I (mA)
C
10
20
50
100
200
500
PW = 1 ms
1 shot pulse (Ta = 25
C)
DC Operation
(Tc = 25
C)
Area of Safe Operation
10 ms
1000
200
500
100
20
50
10
ic(peak)
I max
C
200
100
0
5
10
Collector to Emitter Voltage V (V)
CE
Collector Current I (mA)
C
Typical Output Characteristics
6 mA
4 mA
2 mA
20 mA
18 mA
16 mA
14 mA
12 mA
10 mA
8 mA
I = 0
B
Tc = 25
C
2SC5237
4
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
V = 10 V
CE
Tc = 75
C
25
C
25
C
1000
200
500
100
20
50
10
1
2
5
10
20
50
100 200
DC Current Transfer Ratio vs.
Collector Current
Collector Current I (mA)
C
Collector to Emitter Saturation Voltage
CE(sat)
V (V)
1
2
5
10
20
50 100 200
Collector to Emitter Saturation Voltage
vs. Collector Current
10
2
5
1
0.2
0.5
0.1
0.05
Tc = 75
C
25
C
25
C
I / I = 10
B
C
10
5
2
1
0.5
0.2
0.1
Collector Current I (mA)
C
V (V)
BE(sat)
Base to Emitter Saturation Voltage
I / I = 10
C
B
1
2
5
10
20
50
100 200
Base to Emitter Saturation Voltage
vs. Collector Current
Tc = 75
C
25
C
25
C
2SC5237
5
Collector Current I (mA)
C
Collector Current vs.
Base to Emitter Voltage
200
100
20
50
10
2
5
1
0
0.2
0.4
0.6
0.8
1.0
1.2
Base to Emitter Voltage V (V)
BE
V = 10 V
CE
Tc = 75
C
25
C
25
C
Collector Current I (mA)
C
1000
200
500
100
20
50
10
1
2
5
10
20
50 100 200
Gain Bandwidth Product vs.
Collector Current
V = 30 V
Tc = 25
C
CE
Gain Babdwidth Product f (MHz)
T
Collector to Base Voltage V (V)
CB
1
Collector Output Capacitance
vs. Collector to Base Voltage
Collector Output Capacitance Cob (pF)
20
10
2
5
1
2
5
10
20
50
100
I = 0
f = 1 MHz
E
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