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Электронный компонент: 2SC5447

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2SC5447
Silicon NPN Triple Diffused
Character Display Horizntal Deflection Output
ADE-208-576 B (Z)
3rd. Edition
September 1997
Features
High breakdown voltage
V
CES
= 1500 V
High speed switching
t
f
= 0.15
sec (typ.) at f
H
= 64 kHz
Isolated package
TO3PFM
Outline
TO3PFM
1.
Base
2.
Collector
3.
Emitter
1
2
3
C
E
B
2
3
1
2SC5447
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
V
CES
1500
V
Emitter to base voltage
V
EBO
6
V
Collector current
I
C
8
A
Collector peak current
i
c(peak)
16
A
Collector power dissipation
P
C
Note1
50
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Collector to emitter diode forward current I
D
8
A
Note:
1. Value at Tc = 25C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Emitter to base breakdown
voltage
V
(BR)EBO
6
--
--
V
I
E
= 400mA, I
C
= 0
Collector cutoff current
I
CES
--
--
500
A
V
CE
= 1500V, R
BE
= 0
DC current transfer ratio
h
FE1
5
--
25
V
CE
= 5 V, I
C
= 1A
DC current transfer ratio
h
FE2
4
--
6
V
CE
= 5 V, I
C
= 5A
Collector to emitter saturation
voltage
V
CE(sat)
--
--
5
V
I
C
= 5A, I
B
= 1.25A
Base to emitter saturation
voltage
V
BE(sat)
--
--
1.5
V
I
C
= 5A, I
B
= 1.25A
Collector to emitter diode
forward voltage
V
ECF
--
--
2
V
I
F
= 8A
Fall time
t
f
--
0.2
0.4
s
I
CP
= 4A, I
B1
= 1.2A
f
H
= 31.5kHz
Fall time
t
f
--
0.15
--
s
I
CP
= 4A, I
B1
= 1A
f
H
= 64kHz
2SC5447
3
Main Characteristics
80
60
40
20
0
50
100
150
200
100
5
4
3
2
1
0
5
10
0.1
0.2
0.5
1
2
5
10
1
5
2
10
20
50
100
Collector Power Dissipation Pc (W)
Case Temperature Tc (C)
Collector Power Dissipation
vs. Temperature
Collector to Emitter Voltage V (V)
CE
Collector Current I (A)
C
Typical Output Characteristics
DC Current Transfer Ratio h
FE
Collector Current I (A)
C
DC Current Transfer Ratio vs.
Collector Current
Collector Current I (A)
Collector to Emitter Voltage V (V)
CE
C
Area of Safe Operaion
B
I = 0
1
5
2
10
20
50
0.1
0.5
0.2
10
1000
5000
L = 180 H
I = 1 A
duty < 1 %
Tc = 25C
B2
1.0 A 0.9 A
0.8 A
0.7 A
0.6 A
0.5 A
0.4 A
0.3 A
0.2 A
0.1 A
Tc = 25 C
Tc = 25 C
25 C
75 C
V = 5 V
CE
2SC5447
4
0.1
0.2
0.5
1
2
5
10
0.05
10
2
5
1
0.1
0.2
0.5
0.2
0.5
1
2
5
10
0.1
0.5
0.2
1
2
5
10
0.1
0.2
0.5
1
2
5
10
10
5
0
0.8
0.6
0.4
0.2
0
Collector to Emitter Saturation Voltage
CE(sat)
V (V)
Collector Current I (A)
C
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector Current I (A)
C
Base to Emitter Saturation Voltage
V (V)
BE(sat)
Base to Emitter Saturation Voltage
vs. Collector Current
Base Current I (A)
B
Collector to Emitter Saturation Voltage
V (V)
CE(sat)
Collector to Emitter Saturation Voltage
vs. Base Current
Fall Time t (
s)
f
Base Current I (A)
B1
Fall Time vs. Base Current
I / I = 4
C
B
Tc = 25
C
4 A
5 A
I = 3 A
C
I / I = 4
C
B
Tc = 25
C
25
C
75
C
Tc = 25
C
25
C
75
C
0
0.4
0.8
1.2
1.6
2.0
I = 4 A
f = 64 kHz
Tc = 25
C
CP
H
2SC5447
5
8
6
4
2
0
Storage Time tstg (
s)
Base Current I (A)
B1
Storage Time vs. Base Current
0.4
0.8
1.2
1.6
2.0
I = 4 A
f = 64 kHz
Tc = 25
C
CP
H
2SC5447
6
Package Dimensions
Unit: mm
16.0 Max
5.8 Max
1.4 Max
2.6
4.0
1.6
2.7
1.4 Max
5.0
3.2
f 3.2
5.0 0.3
19.9 0.3
21.0 0.5
0.66
5.45 0.5
5.45 0.5
0.9
Hitachi Code
EIAJ
JEDEC
TO3PFM
--
--
+0.2
0.1
+0.2
0.1
2SC5447
7
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi's permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user's unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
U S A
Tel: 415-589-8300
Fax: 415-583-4207
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Electronic Components Group
Continental Europe
Dornacher Strae 3
D-85622 Feldkirchen
Mnchen
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
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Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
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Tel: 535-2100
Fax: 535-1533
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Unit 706, North Tower,
World Finance Centre,
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Hong Kong
Tel: 27359218
Fax: 27306071
Copyright Hitachi, Ltd., 1997. All rights reserved. Printed in Japan.