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Электронный компонент: 2SC547

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2SC5470
Silicon NPN Triple Diffused
Character Display Horizontal Deflection Output
ADE-208-672 (Z)
1st. Edition
Oct. 1, 1998
Features
High breakdown voltage
V
CBO
= 1500 V
High speed switching
tf = 0.15
sec(typ.) at fH=64kHz
Outline
TO3PFM
1. Base
2. Collector
3. Emitter
1
2
3
2SC5470
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
1500
V
Collector to emitter voltage
V
CEO
700
V
Emitter to base voltage
V
EBO
6
V
Collector current
I
C
20
A
Collector peak current
i
c(peak)
40
A
Collector power dissipation
P
C
Note1
150
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at Tc = 25
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
700
--
--
V
I
C
= 10mA, R
BE
=
Emitter to base breakdown voltage V
(BR)EBO
6
--
--
V
I
E
= 10mA, I
C
= 0
Collector cutoff current
I
CES
--
--
500
A
V
CE
= 1500V, R
BE
= 0
DC current transfer ratio
h
FE1
10
--
40
V
CE
= 5 V, I
C
= 1A
DC current transfer ratio
h
FE2
3.5
--
6.5
V
CE
= 5 V, I
C
= 10A
Collector to emitter saturation
voltage
V
CE(sat)
--
--
5
V
I
C
= 12A, I
B
= 4A
Base to emitter saturation voltage
V
BE(sat)
--
--
1.5
V
I
C
= 12A, I
B
= 4A
Fall time
t
f
--
0.2
0.4
s
I
CP
= 8A, I
B1
= 3A
f
H
= 31.5kHz
Fall time
t
f
--
0.15
--
s
I
CP
= 8A, I
B1
= 2A
f
H
= 64kHz
2SC5470
3
Main Characteristics
200
150
100
50
0
50
100
150
200
100
10
0
5
10
0.1 0.2
0.5
1
2
5
20
1
5
2
10
20
50
100
Collector Power Dissipation Pc (W)
Case Temperature Tc (C)
Collector Power Dissipation
vs. Temperature
Collector to Emitter Voltage V (V)
CE
Collector Current I (A)
C
Typical Output Characteristics
DC Current Transfer Ratio h
FE
Collector Current I (A)
C
DC Current Transfer Ratio vs.
Collector Current
Collector Current I (A)
Collector to Emitter Voltage V (V)
CE
C
Area of Safe Operaion
5
B
I = 0
Tc = 25 C
1
5
2
10
20
50
0.1
0.5
0.2
10
1000
5000
L = 180 H
I = 1 A
duty < 1 %
Tc = 25C
B2
2.0 A
1.8 A
1.6 A
1.4 A
1.2 A
1.0 A
0.8 A
0.6 A
0.4 A
0.2 A
10
Tc = 25 C
25 C
75 C
V = 5 V
CE
2SC5470
4
0.05
10
2
5
1
0.1
0.2
0.5
0.1
0.5
0.2
1
2
5
10
0.1
0.2
0.5
1
2
5
10
10
5
0
0.8
0.6
0.4
0.2
0
0.6
1.0
1.4
1.8
2.2
Collector to Emitter Saturation Voltage
CE(sat)
V (V)
Collector Current I (A)
C
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector Current I (A)
C
Base to Emitter Saturation Voltage
V (V)
BE(sat)
Base to Emitter Saturation Voltage
vs. Collector Current
Base Current I (A)
B
Collector to Emitter Saturation Voltage
V (V)
CE(sat)
Collector to Emitter Saturation Voltage
vs. Base Current
Fall Time t (s)
f
Base Current I (A)
B1
Fall Time vs. Base Current
Tc = 25C
8 A
10 A
I = 6 A
C
2.6
0.2
0.5
1
2
5
20
10
0.1 0.2
0.5
1
2
5
20
10
I / I = 3
C
B
Tc = 25 C
25 C
75 C
I / I = 3
C
B
Tc = 25C
25 C
75 C
3.0
I = 8 A
f = 64 kHz
Tc = 25C
CP
H
2SC5470
5
8
6
4
2
0
0.6
1.0
1.4
1.8
2.2
2.6
3.0
I = 8 A
f = 64 kHz
Tc = 25C
CP
H
Storage Time tstg (s)
Base Current I (A)
B1
Storage Time vs. Base Current