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Электронный компонент: 2SC5480

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2SC5480
Silicon NPN Triple Diffused
Horizntal Deflection Output
ADE-208-632 (Z)
1st. Edition
Oct. 1, 1998
Features
High breakdown voltage
V
CES
= 1500 V
Isolated package
TO3PFM
Built-in damper diode
Outline
TO3PFM
1.
Base
2.
Collector
3.
Emitter
1
2
3
C
E
B
2
3
1
2SC5480
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
V
CES
1500
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
14
A
Collector peak current
i
c(peak)
28
A
Collector power dissipation
P
C
Note1
50
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Collector to emitter diode forward current
I
D
14
A
Note:
1. Value at Tc = 25
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 500mA, I
C
= 0
Collector cutoff current
I
CES
--
--
500
A
V
CE
= 1500V, R
BE
= 0
DC current transfer ratio
h
FE1
5
--
25
V
CE
= 5 V, I
C
= 1A
DC current transfer ratio
h
FE2
4
--
7
V
CE
= 5 V, I
C
= 10A
Collector to emitter saturation
voltage
V
CE(sat)
--
--
5
V
I
C
= 10A, I
B
= 2.5A
Base to emitter saturation
voltage
V
BE(sat)
--
--
1.5
V
I
C
= 10A, I
B
= 2.5A
Collector to emitter diode
forward voltage
V
ECF
--
--
2
V
I
F
= 14A
Fall time
t
f
--
0.2
0.4
s
I
CP
= 7A, I
B1
= 2.4A
f
H
= 31.5kHz
2SC5480
3
Main Characteristics
80
60
40
20
0
50
100
150
200
100
10
0
5
10
0.1 0.2
0.5
1
2
5
20
1
5
2
10
20
50
100
Collector Power Dissipation Pc (W)
Case Temperature Tc (C)
Collector Power Dissipation
vs. Temperature
Collector to Emitter Voltage V (V)
CE
Collector Current I (A)
C
Typical Output Characteristics
DC Current Transfer Ratio h
FE
Collector Current I (A)
C
DC Current Transfer Ratio vs.
Collector Current
Collector Current I (A)
Collector to Emitter Voltage V (V)
CE
C
Area of Safe Operaion
5
Tc = 25 C
1
5
2
10
20
50
0.1
0.5
0.2
10
1000
5000
L = 180 H
I = 1 A
duty < 1 %
Tc = 25C
B2
10
Tc = 25 C
25 C
75 C
V = 5 V
CE
0.8 A
1.4 A
1.2 A
1.0 A
0.6 A
0.4 A
0.2 A
Pc = 50 W
B
I = 0
2SC5480
4
0.05
10
2
5
1
0.1
0.2
0.5
0.1
0.5
0.2
1
2
5
10
0.1
0.2
0.5
1
2
5
10
10
5
0
0.8
0.6
0.4
0.2
0
1.0
1.4
1.8
2.2
2.6
Collector to Emitter Saturation Voltage
CE(sat)
V (V)
Collector Current I (A)
C
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector Current I (A)
C
Base to Emitter Saturation Voltage
V (V)
BE(sat)
Base to Emitter Saturation Voltage
vs. Collector Current
Base Current I (A)
B
Collector to Emitter Saturation Voltage
V (V)
CE(sat)
Collector to Emitter Saturation Voltage
vs. Base Current
Fall Time t (s)
f
Base Current I (A)
B1
Fall Time vs. Base Current
Tc = 25C
7 A
I = 5 A
C
3.0
0.2
0.5
1
2
5
20
10
0.1 0.2
0.5
1
2
5
20
10
I / I = 4
C
B
Tc = 25 C
25 C
75 C
I / I = 4
C
B
Tc = 25C
25 C
75 C
3.4
I = 7 A
f = 31.5 kHz
Tc = 25C
CP
H
0.1
9 A
2SC5480
5
Package Dimensions (Unit: mm)
16.0 Max
5.8 Max
1.4 Max
2.6
4.0
1.6
2.7
1.4 Max
5.0
3.2
f
3.2
5.0
0.3
19.9
0.3
21.0
0.5
0.66
5.45
0.5
5.45
0.5
0.9
Hitachi Code
EIAJ
JEDEC
TO3PFM
--
--
+0.2
0.1
+0.2
0.1
2SC5480
6
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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URL
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: http://www.hitachi.co.jp/Sicd/indx.htm
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