ChipFind - документация

Электронный компонент: 2SC5593

Скачать:  PDF   ZIP
2SC5593
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier
ADE-208-797 (Z)
1st. Edition
Nov. 2000
Features
High gain bandwidth product
f
T
= 23 GHz typ.
High power gain and low noise figure ;
PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz
Outline
CMPAK-4
1. Emitter
2. Collector
3. Emitter
4. Base
1
4
3
2
Note: Marking is "XH-"
.
2SC5593
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
12
V
Collector to emitter voltage
V
CEO
4.5
V
Emitter to base voltage
V
EBO
1
V
Collector current
I
C
12
mA
Collector power dissipation
Pc
50
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
12
--
--
V
I
C
= 10
A , I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 10 V , I
E
= 0
Collector cutoff current
I
CEO
--
--
1
A
V
CE
= 4 V , R
BE
=
Emitter cutoff current
I
EBO
--
--
12
A
V
EB
= 1 V , I
C
= 0
DC current transfer ratio
h
FE
60
100
140
V
V
CE
= 2 V , I
C
= 10 mA
Collector output capacitance
Cob
--
0.16
0.4
pF
V
CB
= 2 V , I
E
= 0
f = 1 MHz
Gain bandwidth product
f
T
20
23
--
GHz
V
CE
= 2 V , I
C
= 10 mA
f = 2 GHz
Power gain
PG
14
18
--
dB
V
CE
= 2 V , I
C
= 10 mA
f = 1.8 GHz
Noise figure
NF
--
1.8
2.3
dB
V
CE
= 2 V , I
C
= 3 mA
f = 1.8 GHz
2SC5593
3
Main Characteristics
200
150
100
50
0
50
100
150
200
10
0.1
1
10
1
2
5
10
20
50
100
0
10
20
30
40
50
100
200
0
1
20
100
Collector Power Dissipatio Pc (mW)
Ambient Temperature Ta (
C)
Collector Power Dissipation Curve
Collector to Base Voltage V (V)
CB
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
DC Current Transfet Ratio vs.
Collector Current
Collector Current I (mA)
C
Gain Bandwidth Prodfuct f (GHz)
T
Gain Bandwidth Product vs.
Collector Current
2
5
50
V = 3 V
CE
0.2
0.4
0.6
0.8
1.0
0
0.2
0.5
2
5
I = 0
f = 1MHz
E
V = 3 V
CE
2 V
1 V
2 V
1 V
2SC5593
4
1
5
10
50
100
10
1
10
100
3
5
0
1
20
100
Power Gain PG (dB)
Power Gain vs. Collector Current
S Parameter |S | (dB)
Collector Current I (mA)
C
Noise Figure NF (dB)
Noise Figure vs. Collector Current
2
5
50
4
8
12
16
20
0
2
5
20
50
0
4
8
12
16
20
Collector Current I (mA)
C
2
20
4
2
1
21
21
2
S Parameter vs. Collector Current
21
Collector Current I (mA)
C
2 V
1 V
f = 1.8GHz
V = 3 V
CE
V = 1 to 3 V
CE
f = 1.8GHz
V = 3 V
CE
2 V
1 V
f = 2GHz
2SC5593
5
10
5
4
3
2
1.5
1
.8
-
2
-
3
-
4
-
5
-
10
.6
.4
.2
0
-
.2
-
.4
-
.6
-
.8
-
1
-
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Scale: 5 / div.
0
30
60
90
120
150
180
-
150
-
90
-
60
-
30
-
120
Scale: 0.02 / div.
0
30
60
90
120
150
180
-
150
-
90
-
60
-
30
-
120
10
5
4
3
2
1.5
1
.8
-
2
-
3
-
4
-
5
-
10
.6
.4
.2
0
-
.2
-
.4
-
.6
-
.8
-
1
-
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Condition :
100 to 2000 MHz (100 MHz step)
C
CE
V = 2 V , I = 10 mA
Condition :
100 to 2000 MHz (100 MHz step)
Condition :
100 to 2000 MHz (100 MHz step)
Condition :
100 to 2000 MHz (100 MHz step)
S11 Parameter vs. Frequency
S21 Paramter vs. Frequency
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
CE
V = 2 V , I = 10 mA
CE
V = 2 V , I = 10 mA
CE
V = 2 V , I = 10 mA
C
C
C
2SC5593
6
S-parameter ( V
CE
= 2 V, I
C
= 10 mA, Zo = 50
)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.804
8.2
22.02
172.5
0.00305
94.6
0.993
3.4
200
0.795
17.8
21.55
165.0
0.0067
86.8
0.986
8.1
300
0.776
27.4
20.88
157.5
0.0107
85.4
0.972
12.7
400
0.746
35.8
20.05
150.2
0.0146
82.5
0.947
17.2
500
0.714
44.5
18.93
143.7
0.0182
78.4
0.917
21.2
600
0.673
53.2
17.84
137.9
0.0215
74.8
0.881
25.1
700
0.632
59.9
16.60
132.5
0.0249
71.8
0.842
28.3
800
0.595
67.1
15.69
127.9
0.0274
67.9
0.808
31.2
900
0.557
74.6
14.64
123.5
0.0296
65.1
0.763
33.7
1000
0.519
79.1
13.68
119.5
0.0319
63.6
0.729
35.6
1100
0.488
86.0
12.88
116.0
0.0337
61.6
0.696
37.2
1200
0.454
91.1
12.03
112.8
0.0350
60.4
0.666
38.6
1300
0.430
95.9
11.26
110.6
0.0366
58.8
0.644
39.5
1400
0.403
101.8
10.69
107.8
0.0382
57.4
0.619
40.6
1500
0.377
106.3
10.16
105.4
0.0401
56.6
0.598
41.2
1600
0.364
111.0
9.66
103.6
0.0410
56.3
0.581
42.0
1700
0.346
116.6
9.19
101.4
0.0422
55.6
0.564
42.6
1800
0.327
120.0
8.79
99.3
0.0435
55.2
0.550
43.2
1900
0.313
124.9
8.40
97.5
0.0447
55.2
0.537
43.9
2000
0.296
130.8
7.99
95.5
0.0457
54.8
0.525
44.0
2SC5593
7
Package Dimensions
2.0
0.2
0.3
2.1
0.3
0.65 0.6
1.25
0.2
0.16
0 0.1
0.9
0.1
+ 0.1
0.05
0.4
+ 0.1
0.05
0.3
+ 0.1
0.05
+ 0.1
0.06
0.65 0.65
1.3
0.2
0.3
+ 0.1
0.05
0.425
0.425
0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
CMPAK-4(T)
--
Conforms
0.006 g
1.25
0.1
As of January, 2001
Unit: mm
2SC5593
8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright
Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
URL
NorthAmerica
: http://semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Europe GmbH
Electronic Components Group
Dornacher Stra
e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
Colophon 2.0
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.