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Электронный компонент: 2SC5594

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2SC5594
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier
ADE-208-798 (Z)
1st. Edition
Nov. 2000
Features
High gain bandwidth product
f
T
= 24 GHz typ.
High power gain and low noise figure ;
PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz
Outline
CMPAK-4
1. Emitter
2. Collector
3. Emitter
4. Base
1
4
3
2
Note: Marking is "XP-".
2SC5594
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
12
V
Collector to emitter voltage
V
CEO
4.5
V
Emitter to base voltage
V
EBO
0.8
V
Collector current
I
C
35
mA
Collector power dissipation
Pc
100
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
12
--
--
V
I
C
= 10
A , I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 10 V , I
E
= 0
Collector cutoff current
I
CEO
--
--
1
A
V
CE
= 4 V , R
BE
=
Emitter cutoff current
I
EBO
--
--
12
A
V
EB
= 0.8 V , I
C
= 0
DC current transfer ratio
h
FE
60
100
140
V
V
CE
= 2 V , I
C
= 20 mA
Collector output capacitance
Cob
--
0.3
0.6
pF
V
CB
= 2 V , I
E
= 0
f = 1 MHz
Gain bandwidth product
f
T
21
24
--
GHz
V
CE
= 2 V , I
C
= 30 mA
f = 2 GHz
Power gain
PG
14
18
--
dB
V
CE
= 2 V, I
C
= 30 mA
f = 1.8 GHz
Noise figure
NF
--
1.2
1.6
dB
V
CE
= 2 V, I
C
= 5 mA
f = 1.8 GHz
2SC5594
3
Main Characteristics
200
150
100
50
0
50
100
150
200
10
0.1
1
10
1
2
5
10
20
50
100
0
10
20
30
40
50
100
200
0
1
20
100
Collector Power Dissipation Pc (mW)
Ambient Temperature Ta (
C)
Maximum Collector Dissipation Curve
Collector to Base Voltage V (V)
CB
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
Collector Current I (mA)
C
Gain Bandwidth Product f (GHz)
T
Gain Bandwidth Product vs.
Collector Current
2
5
50
V = 3 V
CE
0.2
0.4
0.6
0.8
1.0
0
0.2
0.5
2
5
I = 0
f = 1MHz
E
2 V
1 V
V = 3 V
CE
2 V
1 V
2SC5594
4
1
5
10
50
100
10
1
10
100
3
5
0
1
20
100
Power Gain PG (dB)
Power Gain vs. Collector Current
S Parameter |S | (dB)
Collector Current I (mA)
C
Noise Figure NF (dB)
Noise Figure vs. Collector Current
2
5
50
4
8
12
16
20
0
2
5
20
50
0
4
8
12
16
20
Collector Current I (mA)
C
2
20
4
2
1
21
21
2
S Parameter vs. Collector Current
21
Collector Current I (mA)
C
V = 3 V
CE
f = 1.8GHz
2 V
1 V
V = 3 V
CE
2 V
1 V
f = 2GHz
V = 1 to 3 V
CE
f = 1.8GHz
2SC5594
5
10
5
4
3
2
1.5
1
.8
-
2
-
3
-
4
-
5
-
10
.6
.4
.2
0
-
.2
-
.4
-
.6
-
.8
-
1
-
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Scale: 10 / div.
0
30
60
90
120
150
180
-
150
-
90
-
60
-
30
-
120
Scale: 0.02 / div.
0
30
60
90
120
150
180
-
150
-
90
-
60
-
30
-
120
10
5
4
3
2
1.5
1
.8
-
2
-
3
-
4
-
5
-
10
.6
.4
.2
0
-
.2
-
.4
-
.6
-
.8
-
1
-
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Condition ;
100 to 2000 MHz (100 MHz step)
C
CE
V = 2 V , I = 20 mA
Condition ;
100 to 2000 MHz (100 MHz step)
Condition ;
100 to 2000 MHz (100 MHz step)
Condition ;
100 to 2000 MHz (100 MHz step)
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
CE
V = 2 V , I = 20 mA
CE
V = 2 V , I = 20 mA
CE
V = 2 V , I = 20 mA
C
C
C
2SC5594
6
Sparameter ( V
CE
= 2 V, I
C
= 20 mA, Zo = 50
)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.577
24.5
40.31
164.2
0.00674
82.9
0.963
11.5
200
0.560
49.8
36.64
149.3
0.0130
74.5
0.897
23.7
300
0.541
72.2
32.05
136.3
0.0182
68.8
0.803
34.4
400
0.504
90.2
27.56
126.5
0.0225
63.6
0.708
42.4
500
0.495
104.5
23.84
118.8
0.0256
61.3
0.622
48.4
600
0.477
116.9
20.64
113.1
0.0285
58.9
0.548
53.1
700
0.458
126.4
18.11
108.4
0.0311
57.7
0.487
56.2
800
0.456
134.5
16.13
105.1
0.0336
57.3
0.437
58.7
900
0.448
142.5
14.46
101.6
0.0355
57.8
0.394
60.4
1000
0.435
147.9
13.15
99.2
0.0382
56.8
0.360
61.9
1100
0.438
153.6
12.01
96.6
0.0399
57.4
0.331
63.0
1200
0.430
158.5
11.06
94.4
0.0422
57.0
0.306
63.3
1300
0.425
162.6
10.24
93.0
0.0443
58.1
0.288
63.5
1400
0.426
166.9
9.56
91.1
0.0462
58.3
0.269
64.0
1500
0.424
171.1
8.99
89.6
0.0488
58.3
0.253
64.1
1600
0.425
174.1
8.45
88.0
0.0508
58.5
0.241
64.1
1700
0.428
177.4
7.98
86.6
0.0527
58.8
0.230
64.0
1800
0.424
179.7
7.59
85.0
0.0556
58.8
0.220
64.0
1900
0.426
176.6
7.19
83.8
0.0578
59.0
0.212
63.9
2000
0.428
174.7
6.84
82.4
0.0595
58.8
0.204
63.7
2SC5594
7
Package Dimensions
2.0
0.2
0.3
2.1
0.3
0.65 0.6
1.25
0.2
0.16
0 0.1
0.9
0.1
+ 0.1
0.05
0.4
+ 0.1
0.05
0.3
+ 0.1
0.05
+ 0.1
0.06
0.65 0.65
1.3
0.2
0.3
+ 0.1
0.05
0.425
0.425
0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
CMPAK-4(T)
--
Conforms
0.006 g
1.25
0.1
As of January, 2001
Unit: mm
2SC5594
8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright
Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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