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Электронный компонент: 2SC5631

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2SC5631
Silicon NPN Epitaxial
UHF / VHF Wide Band Amplifier
ADE-208-981A (Z)
2nd. Edition
Mar. 2001
Features
High gain bandwidth product
f
T
= 11 GHz typ.
High power gain and low noise figure ;
PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz
Outline
1
2
3
4
UPAK
1. Base
2. Collector
3. Emitter
4. Collector
Note: Marking is "JR".
2SC5631
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
6
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
80
mA
Collector power dissipation
Pc
800*
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
* When using alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
--
--
V
I
C
= 10
A , I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 12 V , I
E
= 0
Collector cutoff current
I
CEO
--
--
1
mA
V
CE
= 6 V , R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1.5 V , I
C
= 0
DC current transfer ratio
h
FE
80
120
160
V
V
CE
= 5 V , I
C
= 50 mA
Collector output capacitance
Cob
--
1.6
2.2
pF
V
CB
= 5 V , I
E
= 0
f = 1 MHz
Gain bandwidth product
f
T
8
11
--
GHz
V
CE
= 5 V , I
C
= 50 mA
f = 1 GHz
Power gain
PG
7
10
--
dB
V
CE
= 5 V , I
C
= 50 mA
f = 900 MHz
Noise figure
NF
--
1.2
1.9
dB
V
CE
= 5 V , I
C
= 5 mA
f = 900 MHz
2SC5631
3
Main Characteristics
1600
1200
800
400
0
50
100
150
200
10
0.1
1
10
1
2
5
10
20
50
100
0
4
8
12
16
20
100
200
0
1
20
100
Collector Power Dissipation Pc (mW)
Ambient Temperature Ta (
C)
Collector Power Dissipation Curve
Collector to Base Voltage V (V)
CB
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
Collector Current I (mA)
C
Gain Bandwidth Prodfuct f (GHz)
T
Gain Bandwidth Product vs.
Collector Current
2
5
50
0.8
1.6
2.4
3.2
4.0
0
0.2
0.5
2
5
I = 0
f = 1MHz
E
V = 5 V
CE
3 V
3 V
V = 5 V
CE
2SC5631
4
1
5
10
50
100
10
1
10
100
3
5
0
1
20
100
Power Gain PG (dB)
Power Gain vs. Collector Current
S Parameter |S | (dB)
Collector Current I (mA)
C
Noise Figure NF (dB)
Noise Figure vs. Collector Current
2
5
50
4
8
12
16
20
0
2
5
20
50
0
4
8
12
16
20
Collector Current I (mA)
C
2
20
4
2
1
21
21
2
S Parameter vs. Collector Current
21
Collector Current I (mA)
C
3 V
f = 900MHz
V = 5 V
CE
V = 5 V
CE
3 V
V = 3 V
CE
5 V
f = 900MHz
f = 1GHz
2SC5631
5
10
5
4
3
2
1.5
1
.8
-
2
-
3
-
4
-
5
-
10
.6
.4
.2
0
-
.2
-
.4
-
.6
-
.8
-
1
-
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Scale: 6 / div.
0
30
60
90
120
150
180
-
150
-
90
-
60
-
30
-
120
Scale: 0.1 / div.
0
30
60
90
120
150
180
-
150
-
90
-
60
-
30
-
120
10
5
4
3
2
1.5
1
.8
-
2
-
3
-
4
-
5
-
10
.6
.4
.2
0
-
.2
-
.4
-
.6
-
.8
-
1
-
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Condition :
100 to 2000 MHz (100 MHz step)
C
CE
V = 3 V , I = 50 mA
Condition :
100 to 2000 MHz (100 MHz step)
Condition :
100 to 2000 MHz (100 MHz step)
Condition :
100 to 2000 MHz (100 MHz step)
S11 Parameter vs. Frequency
S21 Paramter vs. Frequency
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
CE
V = 3 V , I = 50 mA
CE
V = 3 V , I = 50 mA
CE
V = 3 V , I = 50 mA
C
C
C