2SC5757
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
ADE-208-1396D (Z)
Rev.4
Jul. 2001
Features
Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)
Outline
MFPAK
1. Emitter
2. Base
3. Collector
1
3
2
Note: Marking is "WE".
2SC5757
Rev.4, Jul. 2001, page 2 of 10
Absolute Maximum Ratings
(Ta = 25 C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
10
V
Collector to emitter voltage
V
CEO
3.5
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
80
mA
Collector power dissipation
Pc
80
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics
(Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
10
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
600
nA
V
CB
= 10 V, I
E
= 0
Collector cutoff current
I
CEO
200
nA
V
CE
= 3.5 V, R
BE
= Infinite
Emitter cutoff current
I
EBO
100
nA
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
80
100
130
V
CE
= 1 V, I
C
= 5 mA
Collector output capacitance
C
ob
0.9
1.2
1.5
pF
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
4.5
6.5
GHz
V
CE
= 1 V, I
C
= 5 mA
Power gain
PG
8
11
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
Noise figure
NF
1.1
2.0
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
2SC5757
Rev.4, Jul. 2001, page 3 of 10
0
50
100
150
200
100
Collector Power Dissipation Pc (mW)
Collector Power Dissipation Curve
10
100
200
0
1
20
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
2
5
50
V
CE
= 1 V
0
0.4
0.6
1
Collector Current I
C
(mA)
Typical Transfer Characteristics
0
0.5
1
1.5
3.5
Collector Current I
C
(mA)
Typical Output Characteristics
Ambient Temperature Ta (
C)
Collector to Emitter Voltage V
CE
(V)
Base to Emitter Voltage V
BE
(V)
0.2
0.8
V
CE
= 1 V
2.5
2
3
20
40
60
80
100
50
40
30
20
10
500
A
IB = 50 A
100 A
150
A
200
A
250
A
300
A
350
A
400
A
450
A
10
20
30
40
50
2SC5757
Rev.4, Jul. 2001, page 4 of 10
1
10
100
1
2
5
10
20
50
100
0
4
8
12
16
20
Collector Current I
C
(mA)
S
21
Parameter |S
21
|
2
(dB)
S
21
Parameter vs. Collector Current
Collector Current I
C
(mA)
Power Gain PG (dB)
Power Gain vs. Collector Current
4
8
12
16
20
0
2
5
20
50
V
CE
= 1 V
f = 2 GHz
V
CE
= 1 V
f = 900 MHz
1.2
2.0
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance C
ob
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
0.4
0.8
1.2
1.6
2.0
0
0.4
0.8
1.6
1
2
5
10
20
50
100
0
4
8
12
16
20
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
Gain Bandwidth Product vs.
Collector Current
V
CE
= 1 V
f = 2 GHz
I
E
= 0
f = 1 MHz
2SC5757
Rev.4, Jul. 2001, page 5 of 10
10
3
5
0
1
20
100
Collector Current I
C
(mA)
Noise Figure NF (dB)
Noise Figure vs. Collector Current
2
5
50
4
2
1
V
CE
= 1V
f = 900 MHz
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