2SC5812
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
ADE-208-1468(Z)
Rev.0
Nov. 2001
Features
High power gain, Low noise figure at low power operation:
|S
21
|
2
= 17 dB typ, NF = 1.0 dB typ (V
CE
= 1 V, I
C
= 5 mA, f = 900 MHz)
Outline
MFPAK
1
3
2
1. Emitter
2. Base
3. Collector
Note: Marking is "WG".
2SC5812
Rev.0, Nov. 2001, page 2 of 10
Absolute Maximum Ratings
(Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
4
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
80
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to +150
C
Electrical Characteristics
(Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
0.1
A
V
CB
= 15 V, I
E
= 0
Collector cutoff current
I
CEO
1
A
V
CE
= 4 V, R
BE
= Infinite
Emitter cutoff current
I
EBO
0.1
A
V
EB
= 0.8 V, I
C
= 0
DC current transfer ratio
h
FE
100
120
150
V
CE
= 1 V, I
C
= 5 mA
Reverse transfer capacitance
C
re
0.2
pF
V
CE
= 1 V, Emitter ground,
f = 1 MHz
Collector output capacitance
C
ob
0.4
0.7
pF
V
CB
= 1 V, I
E
= 0,
f = 1 MHz
Gain bandwidth product
f
T
(1)
8
11
GHz
V
CE
= 1V, I
C
= 5 mA
Gain bandwidth product
f
T
(2)
15
GHz
V
CE
= 1V, I
C
= 20 mA
Forward transmission
coefficient
|S
21
|
2
14
17
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
Noise figure
NF
1.0
1.7
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz,
S
=
L
= 50
2SC5812
Rev.0, Nov. 2001, page 3 of 10
100
80
60
40
20
0
50
100
150
200
250
Collector Power Dissipation P
C
(mW)
Ambient Temperature Ta (C)
Collector Power Dissipation Curve
20
15
10
5
0
1
2
3
4
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical Transfer Characteristics
200
100
0
0.1
1.0
10
100
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
I
B
= 20
A
40
A
60
A
80 A
100 A
120 A
140 A
160 A
V
CE
= 1 V
VCE = 1 V
180
A
2SC5812
Rev.0, Nov. 2001, page 4 of 10
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
1.5
2.0
2.5
3.0
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance Cob (pF)
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
1.5
2.0
2.5
3.0
Collector to Base Voltage V
CB
(V)
Re
v
erse
T
r
ansf
er Capacitance C
re
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Reverse Transfer Capacitance vs.
Collector to Base Voltage
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
S
21
P
a
r
ameter |S
21
|
2
(dB)
Gain Bandwidth Product vs.
Collector Current
S
21
Parameter vs. Collector Current
V
CE
= 1 V
f = 900 MHz
V
CE
= 1 V
f = 1 GHz
I
E
= 0
f = 1 MHz
Emitter ground
f = 1 MHz
2SC5812
Rev.0, Nov. 2001, page 5 of 10
5
4
3
2
1
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Noise Figure NF (dB)
Noise Figure vs. Collector Current
V
CE
= 1 V
f = 900 MHz
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