2SD1306
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
15
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
0.7
A
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
15
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
1.0
A
V
CB
= 20 V, I
E
= 0
DC current transfer ratio
h
FE
*
1
250
--
800
V
CE
= 1 V, I
C
= 150 mA*
2
Base to emitter voltage
V
BE
--
--
1.0
V
V
CE
= 1 V, I
C
= 150 mA*
2
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.5
V
I
C
= 500 mA, I
B
= 50 mA*
2
Gain bandwidth product
f
T
--
250
--
MHz
V
CE
= 1 V, I
C
= 150 mA*
2
Notes: 1. The 2SD1306 is grouped by h
FE
as follows.
2. Pulse test
Grade
D
E
Mark
ND
NE
h
FE
250 to 500
400 to 800
See characteristic curves of 2SD1504.
2SD1306
5
Cautions
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