2SD1420
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
4
1
2
3
2SD1420
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
180
V
Collector to emitter voltage
V
CEO
120
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
1.5
A
Collector peak current
i
C(peak)
*
1
3
A
Collector power dissipation
P
C
*
2
1
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10 ms, Duty cycle
20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
180
--
--
V
I
C
= 1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
120
--
--
V
I
C
= 10 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
10
A
V
CB
= 160 V, I
E
= 0
DC current transfer ratio
h
FE1
*
1
60
--
320
V
CE
= 5 V, I
C
= 0.15 A
h
FE2
30
--
--
V
CE
= 5 V, I
C
= 0.5 A
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1.0
V
I
C
= 0.5 A, I
B
= 50 mA, Pulse
Base to emitter voltage
V
BE
--
--
0.9
V
V
CE
= 5 V, I
C
= 0.15 A, Pulse
Note:
1. The 2SD1420 is grouped by h
FE1
as follows.
Mark
EA
EB
EC
h
FE1
60 to 120
100 to 200
160 to 320
2SD1420
3
0
50
100
150
Ambient Temperature Ta (
C)
Collector Power Dissipation Pc (W)
(on the alumina ceramic board)
Maximum Collector Dissipation Curve
1.2
0.8
0.4
Typical Output Characteristics
0
10
20
30
40
50
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
1.0
0.8
0.6
0.4
0.2
I
B
= 0
0.5 mA
1.0
1.5
2.0
2.5
4.0
5.0
3.5
3.0
Pulse
Typical Transfer Characteristics
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
1
2
5
10
20
50
200
500
100
0
0.2
0.4
0.6
0.8
1.0
V
CE
= 5 V
Pulse
Ta = 75
C
25
25
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
1
3
10
30
100 300 1,000 3,000
0
50
100
150
200
250
300
DC Current Transfer Ratio h
FE
Pusle
V
CE
= 5 V
2SD1420
4
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage
V
CE
(sat)
(V)
1
3
10
30
100
300 1,000
0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
= 10 I
B
Pulse
Gain Bandwidth Product vs.
Collector Current
Collector Current I
C
(mA)
10
30
100
300
1,000
0
40
80
120
160
200
240
Gain Bandwidth Product f
T
(MHz)
V
CE
= 5 V
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
1
2
5
10
20
50
100
2
5
10
20
50
100
200
f = 1 MHz
I
E
= 0
4.5
0.1
1.8 Max
1.5
0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5
0.1
4.25 Max
0.8 Min
1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
UPAK
--
Conforms
0.050 g
Unit: mm
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