2SD1471
Silicon NPN Planar, Darlington
Application
High gain amplifier
Outline
UPAK
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
4
1
2
3
1
2
3
2SD1471
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
40
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
10
V
Collector current
I
C
300
mA
Collector peak current
i
C(peak)
*
1
500
mA
Collector power dissipation
P
C
*
2
1
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. Pulse
10 ms, Duty cycle
20%
2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
40
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
10
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 30 V, I
E
= 0
I
CEO
--
--
10
A
V
CE
= 24 V, R
BE
=
DC current transfer ratio
h
FE1
*
1
2000
--
100000
V
CE
= 5 V, I
C
= 10 mA*
2
h
FE2
*
1
3000
--
--
V
CE
= 5 V, I
C
= 100 mA*
2
h
FE3
*
1
3000
--
--
V
CE
= 5 V, I
C
= 400 mA*
2
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1.5
V
I
C
= 100 mA, I
B
= 0.1 mA*
2
Base to emitter saturation
voltage
V
BE(sat)
--
--
2.0
V
I
C
= 100 mA, I
B
= 0.1 mA*
2
Notes: 1. The 2SD1471 is grouped by h
FE
as follows.
2. Pulse test
Mark
DT
ET
h
FE1
2000 to 100000 5000 to 100000
h
FE2
3000 min
10000 min
h
FE3
3000 min
10000 min
2SD1471
3
0
0.4
0.8
1.2
50
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(W)
(on the alumina ceramic board)
Maximum Collector Dissipation Curve
100
150
3
0.01
0.003
0.001
0.1
0.03
1.0
0.3
10
30
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Area of Safe Operation
100
300
Ta = 25
C
1 Shot Pulse
i
C(peak)
1
s
1 ms
PW = 10 ms
0.2
0.1
0
0.3
0.5
0.4
2
4
6
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Typical Output Characteristics
8
10
Ta = 25
C
20
18
16
14
6
4
2
I
B
= 0 A
P
C
= 1 W
8
12
10
30
10
3
300
100
30
10
100
300
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
(
10
3
)
DC Current Transfer Ratio vs.
Collector Current
1,000
Ta = 75
C
25
25
V
CE
= 3 V
Pulse
2SD1471
4
1.0
0.3
0.1
10
3
30
10
100
300
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
Saturation Voltage vs.
Collector Current
1,000
Ta = 25
C
I
C
/I
B
= 1,000
V
BE(sat)
V
CE(sat)
3
1.0
0.3
1 m
10
300
30
100
10 m
Time t (s)
Thermal Resistance
j-a
(
C/W)
Transient Thermal Resistance
100 m
1
10
100
1,000
Ta = 25
C
On The Alumina Ceramic Board (12.5
30
0.7 mm)
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