2SD1609, 2SD1610
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110
Outline
1. Emitter
2. Collector
3. Base
TO-126 MOD
1
2
3
Absolute Maximum Ratings (Ta = 25C)
Ratings
Item
Symbol
2SD1609
2SD1610
Unit
Collector to base voltage
V
CBO
160
200
V
Collector to emitter voltage
V
CEO
160
200
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
100
100
mA
Collector power dissipation
P
C
1.25
1.25
W
Junction temperature
Tj
150
150
C
Storage temperature
Tstg
45 to +150
45 to +150
C
2SD1609, 2SD1610
2
Electrical Characteristics (Ta = 25C)
2SD1609
2SD1610
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
160
--
--
200
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
160
--
--
200
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
--
--
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
10
--
--
--
A
V
CB
= 140 V, I
E
= 0
--
--
--
--
--
10
V
CB
= 160 V, I
E
= 0
DC current tarnsfer ratio h
FE1
*
1
60
--
320
60
--
320
V
CE
= 5 V, I
C
= 10 mA
h
FE2
30
--
--
30
--
--
V
CE
= 5 V, I
C
= 1 mA
Base to emitter voltage
V
BE
--
--
1.5
--
--
1.5
V
V
CE
= 5 V, I
C
= 10 mA
Collector to emitter
saturation voltage
V
CE(sat)
--
--
2
--
--
2
V
I
C
= 30 mA, I
B
= 3 mA
Gain bandwidth product f
T
--
140
--
--
140
--
MHz
V
CE
= 5 V, I
C
= 10 mA
Collector output
capacitance
Cob
--
3.8
--
--
3.8
--
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Note:
1. The 2SD1609 and 2SD1610 are grouped by h
FE1
as follows.
B
C
D
60 to 120
100 to 200
160 to 320
Maximum Collector Dissipation
Curve
1.5
1.0
0.5
0
50
100
150
Ambient temperature Ta (
C)
Collector power dissipation P
C
(W)
Typical Output Characteristics
20
16
12
8
4
0
2
4
Collector to emitter voltage V
CE
(V)
10
8
6
Collector current I
C
(mA)
I
B
= 0
10
A
20
30
40
60
70
80
90
100
110
120
50
2SD1609, 2SD1610
3
100
50
20
10
5
2
1
0
0.2
Collector current I
C
(mA)
0.4
Base to emitter voltage V
BE
(V)
0.6
1.0
0.8
Typical Transfer Characteristics
V
CE
= 5 V
Ta = 75
C
25
25
500
200
100
50
20
10
5
1
2
20
100
10
50
DC current transfer ratio h
FE
5
Collector current I
C
(mA)
V
CE
= 5 V
Pulse
DC Current Transfer Ratio vs.
Collector Current
Ta = 75
C
25
25
Saturation Voltage vs. Collector Current
I
C
= 10 I
B
Pulse
5
2
1.0
0.5
0.2
0.1
0.05
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter saturation voltage V
BE(sat)
(V)
1
2
10
Collector current I
C
(mA)
5
50
20
100
V
BE(sat)
V
CE(sat)
Ta = 25
C
Ta = 25
C
25
75
75
25
Gain Bandwidth Product vs.
Collector Current
500
200
100
50
20
10
5
1.0
0.5
2
Collector current I
C
(mA)
20
10
50
5
Gain bandwidth product f
T
(MHz)
V
CE
= 10 V
2SD1609, 2SD1610
4
50
20
10
5
2
1.0
0.5
1
Collector output capacitance C
ob
(pF)
2
5
10
Collector to base voltage V
CB
(V)
20
100
50
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
I
E
= 0
3.1
+0.15
0.1
8.0
0.5
2.3
0.3
1.1
3.7
0.7
11.0
0.5
15.6
0.5
0.8
2.29
0.5
2.29
0.5
0.55
1.2
2.7
0.4
120
120
120
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
--
--
0.67 g
Unit: mm
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