2SD1868, 2SD1869
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Outline
3
2
1
1. Emitter
2. Collector
3. Base
TO-92MOD
2SD1868, 2SD1869
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
2SA1868
2SA1869
Unit
Collector to base voltage
V
CBO
160
200
V
Collector to emitter voltage
V
CEO
160
200
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
100
100
mA
Collector power dissipation
P
C
0.9
0.9
W
Junction temperature
Tj
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
2SD1868 V
(BR)CBO
160
--
--
V
I
C
= 10
A, I
E
= 0
2SD1869
200
Collector to emitter
breakdown voltage
2SD1868 V
(BR)CEO
160
--
--
V
I
C
= 1 mA, R
BE
=
2SD1869
200
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff
current
2SD1868 I
CBO
--
--
10
A
V
CB
= 140 V, I
E
= 0
2SD1869
V
CB
= 160 V, I
E
= 0
DC current transfer ratio
h
FE1
*
1
60
--
320
V
CE
= 5 V, I
C
= 10 mA
h
FE2
30
--
--
V
CE
= 5 V, I
C
= 1 mA
Base to emitter voltage
V
BE
--
--
1.5
V
V
CE
= 5 V, I
C
= 10 mA
Collector to emitter saturation
voltage
V
CE(sat)
--
--
2
V
I
C
= 30 mA, I
B
= 3 mA
Gain bandwidth product
f
T
--
140
--
MHz
V
CE
= 5 V, I
C
= 10 mA
Collector output capacitance
C
ob
--
3.8
--
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Note:
1. The 2SD1868 and 2SD1869 are grouped by h
FE1
as follows.
Grade
B
C
D
h
FE1
60 to 120
100 to 200
160 to 320
2SD1868, 2SD1869
3
150
100
50
Ambient Temperature Ta (
C)
0
1.2
0.8
0.4
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(W)
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
0
20
16
12
8
4
Typical Output Characteristics
Collector Current I
C
(mA)
120
110
100
90
80
70
60
50
40
30
20
10
A
I
B
= 0
0
0.4
0.2
0.6
1.0
0.8
Base to Emitter Voltage V
BE
(V)
100
50
20
10
5
2
1
Typical Transfer Characteristics
Collector Current I
C
(mA)
V
CE
= 5 V
Pulse Test
Ta = 75
C
25
25
2
10
5
20
50
100
1
Collector Current I
C
(mA)
500
200
100
50
20
10
5
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
Ta = 75
C
25
25
V
CE
= 5 V
Pulse Test
2SD1868, 2SD1869
4
1
2
10
50
100
5
20
Collector Current I
C
(mA)
5
2
0.5
0.2
0.1
0.05
1.0
Saturation Voltage vs. Collector Current
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
Ta = 25
C
Ta = 25
C
25
75
75
25
I
C
= 10 I
B
Pulse Test
V
BE(sat)
V
CE(sat)
10
50
5
20
1.0
2
0.5
Collector Current I
C
(mA)
500
200
100
50
20
10
5
Gain Bandwidth Product f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
V
CE
= 5 V
Pulse Test
5
20
100
10
50
2
1
Collector to Base Voltage V
CB
(V)
50
20
10
5
2
1.0
0.5
Collector Output Capacitance C
ob
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
I
E
= 0
0.60 Max
0.5
0.1
4.8
0.3
3.8
0.3
8.0
0.5
0.7
2.3 Max
10.1 Min
0.5
1.27
2.54
0.65
0.1
0.75 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
--
Conforms
0.35 g
Unit: mm
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