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Электронный компонент: 2SD1978

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2SD1978
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Complementary pair with 2SB1387
Outline
3
2
1
1. Emitter
2. Collector
3. Base
TO-92MOD
2 k
(Typ)
0.5 k
(Typ)
I
D
3
2
1
2SD1978
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
120
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
1.5
A
Collector peak current
ic
(peak)
3.0
A
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
E to C diode forward current
I
D
1.5
A
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
120
--
--
V
I
C
= 0.1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
120
--
--
V
I
C
= 10 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
7
--
--
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
1.0
A
V
CB
= 100 V, I
E
= 0
I
CEO
--
--
10
A
V
CE
= 100 V, R
BE
=
DC current transfer ratio
h
FE
2000
--
30000
V
CE
= 3 V, I
C
= 1 A*
1
Collector to emitter saturation
voltage
V
CE(sat)1
--
--
1.5
V
I
C
= 1 A, I
B
= 1 mA*
1
V
CE(sat)2
--
--
2.0
V
I
C
= 1.5 A, I
B
= 1.5 mA*
1
Base to emitter saturation
voltage
V
BE(sat)1
--
--
2.0
V
I
C
= 1 A, I
B
= 1 mA*
1
V
BE(sat)2
--
--
2.5
V
I
C
= 1.5 A, I
B
= 1.5 mA*
1
E to C diode forward voltage
V
D
--
--
3.0
V
I
D
= 1.5 A*
1
Note:
1. Pulse test
2SD1978
3
0
0.4
0.8
1.2
50
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(W)
Maximum Collector Dissipation Curve
100
150
3
0.1
0.03
0.01
1.0
0.3
10
3
10
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Area of Safe Operation
100
30
300
Ta = 25
C
1 Shot Pulse
i
C(peak)
1
s
100
s
1 ms
PW = 10 ms
0.4
0
1.2
0.8
2.0
1.6
1
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Typical Output Characteristics
4
2
3
5
Ta = 25
C
I
B
= 0
200
180
160
140
120
100
A
P
C
= 0.9 W
0.1
300
3,000
1,000
30,000
10,000
0.3
Collector Current I
C
(A)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
1.0
3
10
Ta = 25
C
Pulse
Ta = 75
C
25
25
2SD1978
4
0.3
0.1
3
1.0
10
0.1
Collector Current I
C
(A)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
Saturation Voltage vs.
Collector Current
3
0.3
1.0
10
200,500
V
BE(sat)
V
CE(sat)
I
C
/I
B
= 200
500
Ta = 25
C
Pulse
1.0
3
0.3
30
10
300
100
1 m
Time t (s)
Thermal Resistance
j-a
(
C/W)
Transient Thermal Resistance
10 m
1
10
100
1,000
100 m
Ta = 25
C
0.60 Max
0.5
0.1
4.8
0.3
3.8
0.3
8.0
0.5
0.7
2.3 Max
10.1 Min
0.5
1.27
2.54
0.65
0.1
0.75 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
--
Conforms
0.35 g
Unit: mm