2SD2263
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Features
Build in zener diode for surge absorb.
Suitable for relay drive with small power loss.
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
I
D
3
2
1
2SD2263
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
25
V
Collector to emitter voltage
V
CEO
25
V
Emitter to base voltage
V
EBO
6
V
Collector current
I
C
0.5
A
Collector peak current
i
C(peak)
1.0
A
E to C diode current
I
D
0.5
A
Collector power dissipation
P
C
0.5
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
25
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
25
--
35
V
I
C
= 1 mA, R
BE
=
Collector to emitter sustaining
voltage
V
CEO (sus)
26
--
36
V
I
C
= 0.5 A, R
BE
=
,
L = 20 mH
Emitter to base breakdown
voltage
V
(BR)EBO
6
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.2
A
V
CB
= 20 V, I
E
= 0
I
CEO
--
--
0.5
A
V
CE
= 20 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
0.2
A
V
EB
= 5 V, I
C
= 0
DC current transfer ratio
h
FE1
100
--
500
V
CE
= 2 V, I
C
= 50 mA*
1
h
FE2
50
--
--
V
CE
= 2 V, I
C
= 0.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.5
V
I
C
= 0.5 A*
1
, I
B
= 50 mA
E to C diode forward voltage
V
D
--
--
1.2
V
I
E
= 0.5 A*
1
Note:
1. Pulse test
2SD2263
3
0
200
150
100
50
Ambient Temperature Ta (
C)
Collector Power Dissipation Pc (W)
Maximum Collector Dissipation Curve
0.8
0.6
0.4
0.2
Area of Safe Operation
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
0.003
0.01
0.03
0.1
0.3
3
1
0.1
0.3
1
3
10
30
100
PW = 10 ms
1 ms
DC Operation
(T
C
= 25
C)
i
C
(peak)
I
C
(max)
Ta = 25
C, 1 Shot Pulse
Typical Output Characteristics
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
10
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
I
B
= 0, Ta = 25
C
0.2 mA
PW = 0.5 W
0.4
0.6
0.8
1.8
1.0
1.2
1.4
2.0
1.6
Typical Transfer Characteristics
Collector Current I
C
(A)
Base to Emitter Voltage V
BE
(V)
0
0.1
0.2
0.3
0.4
0.5
0.2
0.4
0.6
0.8
1.0
V
CE
= 2 V
2SD2263
4
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
1
3
10
30
100
300
1,000
10
30
100
300
1,000
DC Current Transfer Ratio h
FE
V
CE
= 2 V
Saturation Voltage vs. Collector Current
0.01
0.03
0.1
0.3
1
3
10
Collector Current I
C
(mA)
1
3
10
30
100
300
1,000
Collector to Emitter Saturation Voltage
V
CE
(sat)
(V)
Base to Emitter Saturation Voltage
V
BE
(sat)
(V)
V
BE
(sat)
V
CE
(sat)
l
C
= 10 l
B
Typical Characteristics of
Emitter to Collector Diode
Emitter to Collector Forward Voltage
V
ECF
(V)
Diode Current I
D
(A)
0.1
0.2
0.3
0.4
0.5
0
0.4
0.8
1.2
1.6
2.0
Gain Bandwidth Product vs.
Collector Current
Collector Current I
C
(mA)
1
3
10
30
100
300
1,000
10
30
100
300
1,000
Gain Bandwidth Product f
T
(MHz)
V
CE
= 2 V
2SD2263
5
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
0.1
0.3
1
3
10
30
100
1
3
10
30
100
PDF 
ZIP