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Электронный компонент: 2SD2651

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2SD2651
Silicon NPN Epitaxial
High Voltage Amplifier
ADE-208-976 (Z)
1st. Edition
October 2000
Features
High breakdown voltage
V
CEO
= -300V min
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
2SD2651
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
300
V
Collector to emitter voltage
V
CEO
300
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
750
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector cutoff current
I
CBO
--
--
0.1
A
V
CB
= 300V, I
E
= 0
I
CEO
--
--
0.1
A
V
CB
= 300V, R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 5 V, I
C
= 0
Base to emitter voltage
V
BE
--
--
0.75
V
V
CE
= 6V,
I
C
= 1mA
DC current transfer raito
h
FE
80
--
160
--
V
CE
= 6V, I
C
= 2mA
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.5
V
I
C
= 30mA, I
B
= 3mA
2SD2651
3
Main Characteristics
150
100
50
Ambient Temperature Ta (s
C)
0
1.5
0.5
1.0
Maximum Collector Dissipation Curve
Collector Dissipation P
C
(W)
Typical Output Characteristics
Collector Current I
C
(mA)
0
2
04
06
08
0
1
0
0
Collector to emitter voltage V
CE
(V)
10
8
6
4
2
Pulse Test
I
B
= 10
A
20
A
30
A
40
A
50
A
80
A
100
A
60
A
Typical Transfer Characteristics
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
100
10
1.0
0.1
0.01
V
CE
= 6 V
Pulse Test
-25
C
25
C
Ta = 75
C
1.0
0.8
0.6
0.4
0.2
0
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
0.1
1.0
10
100
1
10
100
1,000
DC Current Transfer Ratio h
FE
V
CE
= 6 V
Pulse Test
-25
C
25
C
Ta = 75
C
2SD2651
4
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector Current I
C
(mA)
Collector to Emitter saturation Voltage
V
CE
(sat)
(V)
0.1
1.0
10
100
0.01
0.1
1.0
10
I
C
/I
B
= 10
Pulse Test
-25
C
25
C
Ta = 75
C
Gain Bandwidh Product vs.
Collector Current
Collector Current I
C
(mA)
0.1
1.0
10
100
1
10
100
1,000
Gain Bandwidh Product f
T
(MHz)
V
CE
= 6 V
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
0.1
1.0
10
100
0.1
1.0
10
100
f = 1 MHz
I
E
= 0
2SD2651
5
Package Dimensions
0.60 Max
0.55Max
4.8
0.4
3.8
0.4
5.0
0.2
0.7
2.3 Max
12.7 Min
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
As of January, 2001
Unit: mm