2SD468
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SB562
Outline
3
2
1
1. Emitter
2. Collector
3. Base
TO-92MOD
2SD468
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
25
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
1.0
A
Collector peak current
i
C(peak)
1.5
A
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
25
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
1.0
A
V
CB
= 20 V, I
E
= 0
DC current transfer ratio
h
FE
*
1
85
--
240
V
CE
= 2 V, I
C
= 0.5 A*
2
Collector to emitter saturation
voltage
V
CE(sat)
--
0.2
0.5
V
I
C
= 0.8 A, I
B
= 0.08 A*
2
Base to emitter voltage
V
BE
--
0.79
1.0
V
V
CE
= 2 V, I
C
= 0.5 A*
2
Gain bandwidth product
f
T
--
190
--
MHz
V
CE
= 2 V, I
C
= 0.5 A*
2
Collector output capacitance
Cob
--
22
--
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Notes: 1. The 2SD468 is grouped by h
FE
as follows.
2. Pulse test
B
C
85 to170
120 to 240
2SD468
3
Maximum Collector Dissipation Curve
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(W)
0.8
1.2
0.4
0
50
100
150
Typical Output Characteristics
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
1,000
800
600
400
200
0
0.4
I
B
= 0
1mA
2
3
4
5
6
7
1.2
1.6
0.8
1.4
P
C
= 0.9 W
Typical Transfer Characteristics
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
0
1,000
300
100
30
10
3
1
0.4
0.8
0.2
0.6
1.0
V
CE
= 2 V
Ta = 75
C
25
C
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
V
CE
= 2 V
Ta = 75
C
25
C
5,000
2,000
1,000
500
200
100
50
20
10
5
1
10
100
1,000
3
30
300
2SD468
4
Collector to Emitter Saturation
Voltage vs. Collector Current
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
1
10
100
1,000
25
C
Ta = 75
C
I
C
= 10 I
B
0.25
0.20
0.15
0.10
0.05
0
3
30
300
Gain Bandwidth Product vs.
Collector Current
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(MHz)
1,000
30
100
10
300
300
200
100
0
V
CE
= 2 V
Collector Output Capacitance vs.
Collector to Base Voltage
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance C
ob
(pF)
f = 1 MHz
I
E
= 0
1
200
100
50
20
10
5
5
20
2
10
50
0.60 Max
0.5
0.1
4.8
0.3
3.8
0.3
8.0
0.5
0.7
2.3 Max
10.1 Min
0.5
1.27
2.54
0.65
0.1
0.75 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
--
Conforms
0.35 g
Unit: mm
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