2SK1302
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
1
2
3
TO-220AB
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
2SK1302
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
(BR)DSS
100
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
20
A
Drain peak current
I
D(pulse)
*
1
80
A
Body to drain diode reverse drain current
I
DR
20
A
Channel dissipation
Pch*
2
50
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at T
C
= 25
C
2SK1302
3
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
250
A
V
DS
= 80 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
--
0.065
0.085
I
D
= 10 A, V
GS
= 10 V *
1
--
0.085
0.12
I
D
= 10 A, V
GS
= 4 V *
1
Forward transfer admittance
|yfs|
10
16
--
S
I
D
= 10 A, V
DS
= 10 V *
1
Input capacitance
Ciss
--
1300
--
pF
V
DS
= 10 V, V
GS
= 0,
Output capacitance
Coss
--
540
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
160
--
pF
Turn-on delay time
t
d(on)
--
12
--
ns
I
D
= 10 A, V
GS
= 10 V,
Rise time
t
r
--
100
--
ns
R
L
= 3
Turn-off delay time
t
d(off)
--
300
--
ns
Fall time
t
f
--
150
--
ns
Body to drain diode forward
voltage
V
DF
--
1.3
--
V
I
F
= 20 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
300
--
ns
I
F
= 20 A, V
GS
= 0,
di
F
/dt = 50 A/
s
Note:
1. Pulse test
2SK1302
4
50
100
0
Case Temperature T
C
(C)
150
20
Channel Dissipation Pch
(W)
Power vs. Temperature Derating
40
60
Maximum Safe Operation Area
Drain Current I
D
(A)
300
100
30
3
100
10
0.3
1
30
0.1
Drain to Source Voltage V
DS
(V)
10
1000
3
1
100
s
1 ms
Ta = 25C
10
s
DC Operation (T
C
= 25C)
PW = 10 ms (1 Shot)
Operation in this area
is limited by R
DS (on)
Typical Output Characteristics
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
20
16
12
8
4
50
40
30
20
10
0
V
GS
= 2.5 V
Pulse Test
7 V
4 V
3.5 V
5 V
10 V
3 V
Typical Transfer Characteristics
3
Gate to Source Voltage V
GS
(V)
4
2
1
0
5
4
8
12
16
20
0
Drain Current I
D
(A)
V
DS
= 10 V
Pulse Test
75C
T
C
= 25C
25C
2SK1302
5
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage V
GS
(V)
8
4
2
0
10
0.8
1.2
1.6
2.0
0
0.4
Drain to Source Saturation Voltage
V
DS
(on)
(V)
Pulse Test
I
D
= 20 A
10 A
5 A
20
Drain Current I
D
(A)
50
10
5
200
0.02
0.05
0.1
0.2
0.5
2
0.01
0.005
100
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS
(on)
(
)
V
GS
= 4 V
10 V
Pulse Test
80
Case Temperature T
C
(C)
120
40
0
0.04
0.08
0.12
0.16
0.20
40
0
160
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS
(on)
(
)
I
D
= 20 A
Pulse Test
V
GS
= 4 V
V
GS
= 10 V
10 A
20 A
5 A, 10 A
5 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
2
1
0.2
0.5
1.0
2
5
20
Drain Current I
D
(A)
10
Forward Transfer Admittance
yfs
(S)
0.5
V
DS
= 10 V
Pulse Test
25C
T
C
= 25C
75C
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