2SK1519, 2SK1520
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (t
rr
= 120 ns)
Suitable for motor control, switching regulator, DC-DC converter
Outline
TO-3PL
1. Gate
2. Drain
3. Source
D
G
S
1
2
3
2SK1519, 2SK1520
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1519
V
DSS
450
V
2SK1520
500
Gate to source voltage
V
GSS
30
V
Drain current
I
D
30
A
Drain peak current
I
D(pulse)
*
1
120
A
Body to drain diode reverse drain current
I
DR
30
A
Channel dissipation
Pch*
2
200
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at T
C
= 25
C
2SK1519, 2SK1520
3
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1519 V
(BR)DSS
450
--
--
V
I
D
= 10 mA, V
GS
= 0
breakdown voltage
2SK1520
500
Gate to source breakdown
voltage
V
(BR)GSS
30
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
25 V, V
DS
= 0
Zero gate voltage
2SK1519 I
DSS
--
--
250
A
V
DS
= 360 V, V
GS
= 0
drain current
2SK1520
V
DS
= 400 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
2.0
--
3.0
V
I
D
= 1 mA, V
DS
= 10 V
Static Drain to source 2SK1519 R
DS(on)
--
0.11
0.15
I
D
= 15 A, V
GS
= 10 V *
1
on state resistance
2SK1520
--
0.12
0.16
Forward transfer admittance
|yfs|
15
25
--
S
I
D
= 15 A, V
DS
= 10 V *
1
Input capacitance
Ciss
--
5800
--
pF
V
DS
= 10 V, V
GS
= 0,
Output capacitance
Coss
--
1550
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
170
--
pF
Turn-on delay time
t
d(on)
--
65
--
ns
I
D
= 15 A, V
GS
= 10 V,
Rise time
t
r
--
170
--
ns
R
L
= 2
Turn-off delay time
t
d(off)
--
415
--
ns
Fall time
t
f
--
200
--
ns
Body to drain diode forward
voltage
V
DF
--
1.1
--
V
I
F
= 30 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
120
--
ns
I
F
= 30 A, V
GS
= 0,
di
F
/dt = 100 A/
s
Note:
1. Pulse test
2SK1519, 2SK1520
4
300
200
100
0
50
100
150
Case Temperature T
C
(C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
1,000
30
3
0.1
10
100
1,000
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
300
0.3
1
3
30
300
Ta = 25C
10
s
100
s
DC Operation (T
C
= 25C)
1 ms
PW = 10 ms (1 Shot)
100
10
1
Operation in this area
is limited by R
DS (on)
2SK1520
2SK1519
50
8
20
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
40
10
4
12
16
Pulse Test
0
20
30
4.5 V
V
GS
= 4 V
Drain Current I
D
(A)
5 V
6 V
10 V
50
4
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
40
10
2
6
8
25C
0
20
30
V
DS
= 10 V
Pulse Test
25C
T
C
= 75C
2SK1519, 2SK1520
5
10
4
10
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
8
2
2
6
8
0
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20 A
I
D
= 50 A
Pulse Test
10 A
5
200
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(
)
2
0.1
5
20
100
2
0.5
1
Static Drain to Source on State
Resistance vs. Drain Current
0.2
0.05
50
V
GS
= 10 V, 15 V
Pulse Test
10
0.5
40
160
Case Temperature T
C
(C)
Static Drain to Source on State Resistance
R
DS (on)
(
)
0.4
0.1
0
80
120
0
0.2
0.3
Static Drain to Source on State
Resistance vs. Temperature
I
D
= 50 A
V
GS
= 10 V
Pulse Test
40
20 A
10 A
100
1
50
Drain Current I
D
(A)
Forward Transfer Admittance
yfs
(S)
50
5
0.5
2
10
1
10
20
Forward Transfer Admittance
vs. Drain Current
V
DS
= 10 V
Pulse Test
2
5
20
75C
25C
T
C
= 25C
PDF 
ZIP