ChipFind - документация

Электронный компонент: 2SK522

Скачать:  PDF   ZIP
2SK522
Silicon N-Channel Junction FET
Application
VHF amplifier, Mixer, local oscillator
Outline
1. Gate
2. Source
3. Drain
SPAK
1
2
3
2SK522
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
V
GDO
30
V
Gate current
I
G
10
mA
Drain current
I
D
20
mA
Channel power dissipation
Pch
200
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to drain breakdown
voltage
V
(BR)GDO
30
--
--
V
I
G
= 100
A, I
S
= 0
Gate cutoff current
I
GSS
--
--
10
nA
V
GS
= 0.5 V, V
DS
= 0
Drain current
I
DSS
*
1
4
--
20
mA
V
DS
= 5 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
--
--
3
V
V
DS
= 5 V, I
D
= 10
A
Forward transfer admittance
fs
y
8
10
--
mS
V
DS
= 5 V, V
GS
= 0, f = 1 kHz
Input capacitance
Ciss
--
6.8
--
pF
V
DS
= 5 V, V
GS
= 0, f = 1 MHz
Reverse transfer capacitance
Crss
--
0.1
--
pF
Power gain
PG
20
27
--
dB
V
DS
= 5 V, V
GS
= 0,
f = 100 MHz
Noise figure
NF
--
1.7
2.5
dB
Note:
1. The 2SK522 is grouped by I
DSS
as follows.
Drain
D
E
F
I
DSS
4 to 8
6 to 10
10 to 20
2SK522
3
0
50
100
150
Ambient Temperature Ta (
C)
Channel Power Dissipation Pch (mW)
300
200
100
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics (1)
Drain to Source Voltage V
DS
(V)
0
10
20
30
40
50
Drain Current I
D
(mA)
10
8
6
4
2
P
ch
= 200 mW
0.4
0.6
0.8
1.0
0.2 V
V
GS
= 0
Typical Output Characteristics (2)
10
8
6
4
2
Drain to Source Voltage V
DS
(V)
0
1
2
3
4
5
Drain Current I
D
(mA)
0.4
0.6
0.8
1.0
0.2 V
V
GS
= 0
Typical Transfer Characteristics
15
10
5
0
Gate to Source Voltage V
GS
(V)
3.0
2.0
1.0
0
Drain Current I
D
(mA)
V
DS
= 5 V
F
E
D
2SK522
4
Forward Transfer Admittance vs.
Drain to Source Voltage
15
10
5
Drain to Source Voltage V
DS
(V)
Forward Transfer Admittance
yfs
(mS)
0
5
10
15
Ta = 25
C
25
C
75
C
V
GS
= 0
f = 1 kHz
Forward Transfer Admittance vs.
Drain Current
Drain Current I
D
(mA)
Forward Transfer Admittance
yfs
(mS)
0.2
0.5
1.0
2
5
10
20
V
DS
= 5 V
f = 1 kHz
0.5
1.0
2
5
20
50
10
Input Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Input Capacitance Ciss (pF)
2
5
10
20
0.1
0.2
1.0
2
0.5
5
10
V
GS
= 0
f = 1 MHz
Reverse Transfer Capacitance vs.
Drain to Source Voltage
Reverse Transfer Capacitance Crss (pF)
Drain to Source Voltage V
DS
(V)
0.05
0.1
0.2
0.5
1.0
2
5
0.1
0.2
0.5
1.0
2
5
10
V
GS
= 0
f = 1 MHz
2SK522
5
Output Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Output Capacitance Coss (pF)
2
5
10
20
50
100
200
0.1
0.2
0.5
1.0
2
5
10
V
GS
= 0
f = 1 MHz
Power Gain vs.
Drain to Source Voltage
30
20
10
0
5
10
15
Drain to Source Voltage V
DS
(V)
V
GS
= 0
f = 100 MHz
Power Gain PG (dB)
Noise Figure vs.
Drain to Source Voltage
8
6
4
2
0
4
8
12
16
Drain to Source Voltage V
DS
(V)
Noise Figure NF (dB)
V
GS
= 0
f = 100 MHz
2SK522
6
Power Gain and Noise Figure
Test Circuit
SG Output
Impedance
50
5.4
3.0
4,700
S.G.
C
1
C
2
C
1
, C
2
:
L
1
:
L
2
:
L
1
L
2
Shield
D.U.T.
50
V.V
Unit R :
C : pF
V
DD
0 to 30pF Max Variable Air
3.5 T
1 mm
Copper Ribbon, Tin plated 10 mm Inside dia.
4.5 T
1 mm
Copper Ribbon, Tin plated 10 mm Inside dia.
1,000
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SPAK
--
--
0.10 g
Unit: mm
4.2 Max
0.6 Max
0.45
0.1
1.27
1.27
2.54
2.2 Max
0.4
0.1
0.6
1.8 Max
14.5 Min
3.2 Max
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to: