3SK194
Silicon N-Channel Dual Gate MOS FET
Application
VHF/UHF TV tuner RF amplifier
Outline
1. Source
2. Gate1
3. Gate2
4. Drain
MPAK-4
1
4
3
2
3SK194
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
15
V
Gate 1 to source voltage
V
G1S
10
V
Gate 2 to source voltage
V
G2S
10
V
Drain current
I
D
35
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
125
C
Storage temperature
Tstg
55 to +125
C
3SK194
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
15
--
--
V
I
D
= 200
A,
V
G1S
= V
G2S
= 5 V
Gate 1 to source breakdown
voltage
V
(BR)G1SS
10
--
--
V
I
G1
=
10
A, V
G2S
= V
DS
= 0
Gate 2 to source breakdown
voltage
V
(BR)G2SS
10
--
--
V
I
G2
=
10
A, V
G1S
= V
DS
= 0
Gate 1 cutoff current
I
G1SS
--
--
100
nA
V
G1S
=
8 V, V
G2S
= V
DS
= 0
Gate 2 cutoff current
I
G2SS
--
--
100
nA
V
G2S
=
8 V, V
G1S
= V
DS
= 0
Gate 1 to source cutoff voltage V
G1S(off)
--
--
1.0
V
V
DS
= 10 V, V
G2S
= 3 V,
I
D
= 100
A
Gate 2 to source cutoff voltage V
G2S(off)
--
--
1.5
V
V
DS
= 10 V, V
G1S
= 3 V,
I
D
= 100
A
Drain current
I
DSS
0
--
10
mA
V
DS
= 6 V, V
G1S
= 0, V
G2S
= 3 V
Forward transfer admittance
|y
fs
|
17
--
--
mS
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 1 kHz
Input capacitance
Ciss
--
2.8
3.5
pF
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 1 MHz
Output capacitance
Coss
--
1.8
2.5
pF
Reverse transfer capacitance
Crss
--
0.02
--
pF
Power gain
PG
12
15
--
dB
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 900 MHz
Noise figure
NF
--
3.0
4.5
dB
Noise figure
NF
--
3.0
4.0
dB
V
DD
= 12 V, V
AGC
= 10.5 V,
f = 60 MHz
Power gain
PG
27
30
--
dB
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 200 MHz
Noise figure
NF
--
1.0
2.5
dB
Note:
Marking is "IY".
3SK194
4
Maximum Channel Power
Dissipation Curve
Ambient Temperature Ta (
C)
Channel Power Dissipation P
ch
(mW)
200
300
100
0
50
100
150
Typical Output Characteristics
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(mA)
0.8
20
16
12
8
4
0
2
4
6
10
8
0.6
0.4
0.2
V
G1S
= 0
V
G2S
= 3 V
Drain Current vs. Gate 1 to
Source Voltage
Gate 1 to Source Voltage V
G1S
(V)
Drain Current I
D
(mA)
2
20
16
12
8
4
0
0
1
1
2
4
3
1
1.5
0.5
V
G2S
= 0 V
V
DS
= 6 V
Drain Current vs. Gate 2 to
Source Voltage
Gate 2 to Source Voltage V
G2S
(V)
Drain Current I
D
(mA)
20
16
12
8
4
0
0
1
1
2
4
3
1
1.5
0.5
V
G1S
= 0 V
V
DS
= 6 V
3SK194
5
Forward Transfer Admittance vs.
Gate 1 to Source Voltage
Gate 1 to Source Voltage V
G1S
(V)
Forward Transfer Admittance
y
fs
(mS)
30
24
18
12
6
0
0
1
1
2
4
3
1.5
2
2.5
3
1
0.5
V
G2S
= 0 V
V
DS
= 6 V
f = 1 kHz
Power Gain vs. Drain Current
Drain Current I
D
(mA)
Power Gain PG
(dB)
50
40
30
20
10
0
4
8
12
20
16
V
DS
= 6 V
V
G2S
= 3 V
f = 200 MHz
Power Gain vs. Drain Current
Drain Current I
D
(mA)
Power Gain PG
(dB)
20
16
12
8
4
0
4
8
12
20
16
V
DS
= 6 V
V
G2S
= 3 V
f = 900 MHz
Power Gain vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Power Gain PG
(dB)
50
40
30
20
10
0
4
8
12
20
16
V
G2S
= 3 V
I
D
= 10 mA
f = 200 MHz
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