3SK295
5
30
24
18
12
6
2.0
0
V = 3.0 V
G2S
2.5 V
1.0 V
DS
V = 6 V
f = 1 kHz
0.4
0.8
1.2
1.6
0.5 V
Gate1 to source voltage V (V)
G1S
Forward transfer admittance
fs
Forward Transfer Admittance vs.
Gate1 to Source Voltage
|y | (mS)
2.0 V
1.5 V
20
0
25
20
15
10
5
1
2
5
10
DS
G2S
V = 4 V
V = 3 V
f = 900 MHz
Power gain PG (dB)
Drain current I (mA)
D
Power Gain vs. Drain Current
20
0
5
4
3
2
1
1
2
5
10
Noise figure NF (dB)
Drain current I (mA)
D
Noise Figure vs. Drain Current
DS
V = 4 V
V = 3 V
f = 900 MHz
G2S
0
25
20
15
10
5
2
4
6
8
10
D
G2S
V = 3 V
I = 10 mA
f = 900 MHz
Power gain PG (dB)
Drain to source voltage V (V)
DS
Power Gain vs. Drain to Source Voltage
3SK295
7
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8
2
3 4 5
1.5
10
DS
G2S
D
V = 4 V , V = 3 V
I = 10 mA , Zo = 50
S11 Parameter vs. Frequency
Condition:
100 to 1000 MHz (50 MHz step)
1.0
Scale: 0.5 / div.
0
30
60
90
120
150
180
150
90
60
30
120
DS
G2S
D
V = 4 V , V = 3 V
I = 10 mA , Zo = 50
S21 Parameter vs. Frequency
Condition:
100 to 1000 MHz (50 MHz step)
Scale: 0.002/ div.
0
30
60
90
120
150
180
150
90
60
30
120
DS
G2S
D
V = 4 V , V = 3 V
I = 10 mA , Zo = 50
S12 Parameter vs. Frequency
Condition:
100 to 1000 MHz (50 MHz step)
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8
2
3 4 5
1.5
10
DS
G2S
D
V = 4 V , V = 3 V
I = 10 mA , Zo = 50
S22 Parameter vs. Frequency
Condition:
100 to 1000 MHz (50 MHz step)
1.0
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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