3SK309
GaAs N Channel Dual Gate MES FET
UHF RF Amplifier
ADE-208-472 A
2nd. Edition
Features
Capable of low voltage operation (V
DS
= 1.5 to 3 V)
Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz)
High power gain (PG = 21.0 dB typ. at f = 900 MHz)
Outline
1. Source
2. Gate1
3. Gate2
4. Drain
CMPAK4
1
4
3
2
3SK309
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
6
V
Gate 1 to source voltage
V
G1S
4
V
Gate 2 to source voltage
V
G2S
4
V
Drain current
I
D
18
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
125
C
Storage temperature
Tstg
55 to +125
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate 1 to cutoff current
I
G1SS
--
--
20
A
V
G1S
= 4 V
V
G2S
= V
DS
= 0
Gate 2 to cutoff current
I
G2SS
--
--
20
A
V
G2S
= 4 V
V
G1S
= V
DS
= 0
Gate 1 to source cutoff voltage V
G1S(off)
0.2
--
1.5
V
V
DS
= 3 V, V
G2S
= 0
I
D
= 100
A
Gate 2 to source cutoff voltage V
G2S(off)
0.2
--
1.5
V
V
DS
= 3 V, V
G1S
= 0
I
D
= 100
A
Zero gate voltege drain current I
DSS
25
40
60
mA
V
DS
= 3 V, V
G1S
= 0
V
G2S
= 0
Forward transfer admittance
|y
fs
|
30
40
--
mS
V
DS
= 3 V, V
G2S
= 0
I
D
= 5 mA, f = 1 kHz
Power gain
PG
18
21
--
dB
V
DS
= 3 V, V
G2S
= 0
Noise figure
NF
--
1.25
1.5
dB
I
D
= 5 mA, f = 900 MHz
Power gain
PG
--
20
--
dB
V
DS
= 1.5 V, V
G2S
= 0
Noise figure
NF
--
1.3
--
dB
I
D
= 3 mA, f = 900 MHz
Note:
Marking is "XV"
3SK309
3
Main Characteristics
200
150
100
50
0
50
100
150
200
Channel Power Dissipation Pch (mW)
Ambient Temperature Ta (
C)
Maximum Channel Power
Dissipation Curve
20
16
12
8
4
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(mA)
V
G1S
= 1 V
0.4 V
0.5 V
0.6 V
0.7 V
0.8 V
0.9 V
Pulse Test
Typical Output Characteristics
20
16
12
8
4
0
1.6
1.2
0.8
0.4
0
Gate1 to Source Voltage V
G1S
(V)
Drain Current I
D
(mA)
2.0
0 V
0.4 V
V
DS
= 3 V
0.6 V
V
G2S
= 1 V
0.8 V
0.2 V
Drain Current vs.
Gate1 to Source Voltage
20
16
12
8
4
1.6
1.2
0.8
0.4
0
Gate2 to Source Voltage V
G2S
(V)
Drain Current I
D
(mA)
2.0
0
0 V
0.4 V
V
DS
= 3 V
0.6 V
V
G1S
= 1 V
0.8 V
0.2 V
Drain Current vs.
Gate2 to Source Voltage
3SK309
4
100
80
60
40
20
1.6
1.2
0.8
0.4
0
Gate1 to Source Voltage V
G1S
(V)
Forward Transfer Admittance |y | (mS)
fs
2.0
0
0 V
0.4 V
0.6 V
V
G2S
= 1 V
0.8 V
0.2 V
V
DS
= 3 V
f = 1 kHz
Forward Transfer Admittance vs.
Gate1 to Source Voltage
100
80
60
40
20
4
8
12
16
20
Forward Transfer Admittance |y | (mS)
Drain Current I
D
(mA)
0
V
DS
= 3 V
V
G2S
= 0
f = 1 kHz
fs
Forward Transfer Admittance vs.
Drain Current
25
20
15
10
5
4
8
12
16
20
Power Gain PG (dB)
Drain Current I (mA)
D
0
Power Gain vs. Drain Current
DS
V = 1.5 V
3 V
G2S
V = 0
f = 900 MHz
2.0
1.6
1.2
0.8
0.4
4
8
12
16
20
Noise Figure NF (dB)
Drain Current I (mA)
D
0
Noise Figure vs. Drain Current
DS
V = 1.5 V
3 V
G2S
V = 0
f = 900 MHz
3SK309
5
25
20
15
10
5
1
3
4
5
6
Power Gain PG (dB)
Drain to Source Voltage V
DS
(V)
0
2
Power Gain vs.
Drain to Source Voltage
V
G2S
= 0
f = 900 MHz
I
D
= 3 mA
5 mA
2.0
1.6
1.2
0.8
0.4
1
3
4
5
6
Noise Figure NF (dB)
Drain to Source Voltage V
DS
(V)
0
2
Noise Figure vs.
Drain to Source Voltage
V
G2S
= 0
f = 900 MHz
I
D
= 5 mA
3 mA
25
20
15
10
5
1
0
Power Gain PG (dB)
Gate2 to Source Voltage V
G2S
(V)
0
0.8
0.6
0.4
0.2
Power Gain vs.
Gate2 to Source Voltage
V
G1S
is fixed
for I
D
= 5 mA
at V
G2S
= 0
V
DS
= 3 V
f = 900 MHz
50
40
30
20
10
1.5
0.5
0
0.5
1.0
Gain Reduction GR (dB)
Gate2 to Source Voltage V
G2S
(V)
0
1.0
Gain Reduction vs.
Gate2 to Source Voltage
V
G1S
is fixed
for I
D
= 5 mA
at V
G2S
= 0
V
DS
= 3 V
f = 900 MHz
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