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Электронный компонент: A220

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HA22032T
GaAs MMIC
Down Converter for Micro Wave Application
ADE-207-259 (Z)
1st. Edition
May 1998
Features
Suitable for down converter of Micro Wave Application(1.5 GHz)
Low voltage and low current operation (3V, 9 mA typ.)
Low noise (2 dB typ. @1.5 Ghz)
High power gain (26 dB typ. @1.5 GHz)
Builtin matching circuits (50
)
Small surface mount package (TSSOP-8)
Outline
TTP-8D
This document may, wholly or partially, be subject to change without notice.
This Device si sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
HA22032
2
Pin Arrangement
Top View
HA32
8A1
HA32
Mark type
8A1
Weekly code(variable)
Monthly code(variable)
Yearly code(variable)
1
2
3
4
8
7
6
5
Pin No.
Pin name
Function
1
Vddlo
Power supply (Lo)
2
Vddln
Power supply (LNA)
3
GND
Ground
4
RF in
RF input
5
Cs
Bypath capacitor (>100 pF)
6
IF out
IF output
7
GND
Ground
8
Lo in
Local input
HA22032
3
Block Diagram
RF in
1.5pF
6.8nH
Lo in
2.7nH
1.5pF
*
*
390nH
220nH
5pF
Vdd
*
IF out
Vdd
*:1000+15pF
3
4
2
1
7
8
5
6
HA22032
4
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Supply voltage
Vdd
5
V
Maximum current
Idd
15
mA
Power dissipation
Pd
100
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +125
C
Operation temperature
Topr
20 to +70
C
Maximum input power
Pin max
+18
dBm
Electrical Characteristics (Ta = 25C, Vdd = 3V)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Quiescent current
Idd
5
9
12
mA
No signal
Power gain
PG
23
26
29
dB
f = 1489 Mhz, fLo = 1619 Mhz,
Plo = 15 dBm, IF = 130 Mhz,
Pin = 30dBm
Noise figure
NF
--
2
3
dB
f = 1489 Mhz, fLo = 1619 Mhz,
Plo = 15 dBm, IF = 130 MHz
Typical Performance (Ta = 25C, Vdd = 3V)
Item
Symbol
Typ
Unit
Test Conditions
VSWR (input)
VSWR
in
2
--
f = 1.489 GHz
3rd order inter-cept point
IP3o
+4
dBm
f = 1.489 GHz, fud =1.490 Ghz, Pin = 30 dBm,
fLo = 1.619 Ghz, Plo = 15 dBm
HA22032
5
Main Characteristics
29
28
27
26
25
24
23
3
2.5
2
1.5
Conversion gain,Noise figure
vs.Frequency
1400
1600
1550
1500
1450
Frequency f (MHz)
Conversion gain CG (dB)
Noise figure NF (dB)
NF
CG
8
6
4
2
0
3rd order inter-cept point(out)
vs. Frequency
1400
1600
1550
1500
1450
Frequency f (MHz)
3rd order inter-cept point IP3o (dBm)
29
28
27
26
25
24
23
Conversion gain,3rd order inter-cept point
vs. Input power
-55
-20
-30
-40
-45
Frequency f (MHz)
Conversion gain CG (dB)
-55
-35
-35
6
5
4
3
2
1
0
3rd order inter-cept point IP3o (dBm)
CG
IP3o
2.5
2
1.5
1
VSWR vs. Frequency
1475
1505
1490
1485
Frequency(RF) RF (MHz)
VSWR
1480
1495 1500
RF
Lo
1605
1635
1620
1615
Frequency(Lo) Lo (MHz)
1610
1625 1630
Vdd = 3V
f = 1489MHz
fLo = 1619MHz
PLo = 15dBm
Ta = +25C
2 signals input
Vdd = 3V
Ta = +25C
Vdd = 3V
Pin = 30dBm
IF = 130MHz
PLo = 15dBm
Ta = +25C
2 signals input
Vdd = 3V
Pin = 30dBm
IF = 130MHz
PLo = 15dBm
Ta = +25C