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Электронный компонент: HA13156

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HA13156
38 W
4-Channel BTL Power IC
ADE-207-241 (Z)
1st. Edition
July 1997
Description
The HA13156 is four-channel BTL amplifier IC designed for car audio, featuring high output and low
distortion, and applicable to digital audio equipment. It provides 38 W output per channel, with a 13.7 V
power supply and at Max distortion.
Functions
4 ch BTL power amplifiers
Built-in standby circuit
Built-in muting circuit
Built-in protection circuit (surge, T.S.D, and ASO)
Built-in change booster ON/OFF circuit
Features
High power for booster circuit
Popping noise minimized
Low output noise
Built-in high reliability protection circuit
HA13156
2
Block Diagram
C1 to C8 should be polyester film capacitors with no secondary resonance (non-inductive),
to assure stable operation.
*
Unit R:
C: F
2
STBY
MUTE
1
IN1
SW1
TAB
SW2
VCC
IN2
IN3
28
IN4
10
15
BST1
BSTSW
17
BST2
BSTOUT
R9
7.5k
C12
4.7
+
C9
4400
+
C11
0.47
C14
0.47
C10
2.2
SW3
3
4
SP1
5
PGND1
R1
OUT1
2.2
C1
0.1
R2
2.2
C2
0.1
+
OUT1
Amp1
7
8
SP2
9
PGND2
R3
OUT2
2.2
C3
0.1
R4
2.2
C4
0.1
+
OUT2
Amp2
21
22
SP3
23
PGND3
R5
OUT3
2.2
C5
0.1
R6
2.2
C6
0.1
+
OUT3
Amp3
25
26
SP4
27
PGND4
R7
OUT4
2.2
C7
0.1
R8
2.2
C8
0.1
+
OUT4
Buffer & Mute-1
Buffer & Mute-2
Buffer & Mute-3
Buffer & Mute-4
CLKGEN
Protector
(ASO, Surge, TSD)
20
14
INGND
18
BSTGND
+
C13
100
19
+
Booster
13
Amp4
16
INVCC
24
PVCC2
6
PVCC1
11
12
HA13156
3
Note: 1. Standby
Power is turned on when a signal of 3.5 V or 0.05 mA is impressed at pin 2.
When pin 2 is open or connected to GND, standby is turned on (output off).
2
5 V
37.5 k
23.5 k
Q1 ON
BIAS ON
2. Muting
Muting is turned off (output off) when a signal of 3.5 V or 0.2 mA is impressed at pin 10.
When pin 10 is open or connected to GND, muting is turned on (output off).
5 V
25 k
Q2 ON
MUTE ON
10
3. DC-DC converter (Booster)
DC-DC converter (Booster) in IC is turned on when a signal of 3.5 V over or 0.04 mA over is
impressed at pin 13, and get large max output power.
When pin 13 is open or connected to GND, DC-DC converter (Booster) is turned off.
This IC is generated noise, because built-in DC-DC converter (Booster).
Consequently if you use radio tuner (AM), I recommend DC-DC converter (Booster) off.
13
5 V
30 k
20 k
Q3 ON
Booster ON
HA13156
4
Absolute Maximum Ratings
Item
Symbol
Rating
Unit
Operating supply voltage
V
CC
18
V
Supply voltage when no signal*
1
V
CC
(DC)
26
V
Peak supply voltage*
2
V
CC
(PEAK)
50
V
Output current*
3
I
O
(PEAK)
4
A
Power dissipation*
4
P
T
83
W
Junction temperature
Tj
150
C
Operating temperature
Topr
30 to +85
C
Storage temperature
Tstg
55 to +125
C
Note:
1. Tolerance within 30 seconds.
2. Tolerance in surge pulse waveform.
3. Value per 1 channel.
4. Value when attached on the infinite heat sink plate at Ta = 25
C.
The derating carve is as shown in the graph below.
100
50
0
25
50
85
100
150
Ambient temperature Ta (
C)
Power dissipation P
T
(W)
A: When heat sink is infinite (
j-a = 1.5
C/W)
B: When
f (thermal resistance of heat sink) = 3
C/W
(
j-a = 4.5
C/W)
B
83 W
28 W
A
HA13156
5
Electrical Characteristics (V
CC
= 13.2 V, R
L
= 4
, f = 1 kHz, Rg = 600
, Ta = 25
C,
when there is no description in test conditions)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Quiescent current1
I
Q1
275
380
480
mA
Vin = 0 V, boost on, R
L
=
Quiescent current2
I
Q2
190
320
420
mA
Vin = 0 V, boost off, R
L
=
Total harmonic distortion
T.H.D.
--
0.02
0.1
%
Po = 3 W, boost on, off
Gain
G
V
30.5
32
33.5
dB
Gain difference between channels
G
V
1.0
0
1.0
dB
Rated output power1
P
O1
20
23
--
W
V
CC
= 13.2 V, boost on,
R
L
= 4
, THD = 10%
Rated output power2
P
O2
17
20
--
W
V
CC
= 13.2 V, boost off,
R
L
= 4
, THD = 10%
Max output power1
P
OMAX1
35
38
--
W
V
CC
= 13.7 V, boost on,
R
L
= 4
Max output power2
P
OMAX2
31
34
--
W
V
CC
= 13.7 V, boost off,
R
L
= 4
Output noise voltage1
WBN1
--
0.15
0.3
mVrms
Rg = 0
, mute off,
BW = 20 to 20 kHz
Output noise voltage2
WBN2
--
0.08
0.2
mVrms
Rg = 0
, mute on,
BW = 20 to 20 kHz
Ripple rejection
SVR
45
55
--
dB
f = 120 Hz
Output offset voltage1
V
Q1
250
0
250
mV
Vin = 0 V, mute off
Output offset voltage2
V
Q2
250
0
250
mV
Vin = 0 V, change value
of mute on
off
Standby current
I
ST
--
1
10
A
boost off
Standby control voltage (high)
V
STH
3.5
--
V
CC
V
Standby control voltage (low)
V
STL
0
--
1.5
V
Muting control voltage (high)
V
MH
3.5
--
V
CC
V
Muting control voltage (low)
V
ML
0
--
1.5
V
Boost control voltage (high)
V
BH
3.5
--
V
CC
V
Boost control voltage (low)
V
BL
0
--
1.5
V
Muting attenuation
ATTM
70
90
--
dB
Vout = 6.7 Vrms
Channel cross talk
C.T.
60
80
--
dB
Vout = 6.7 Vrms
Input impedance
Zin
18
25
33
k
Input voltage muted completly
ATTin
7
--
--
Vp-p
Note:
boost on; Boost control voltage (high),
mute on; Muting control voltage (low)
HA13156
6
Characteristic Curves
12
14
16
18
20
70
50
20
Supply Voltage V
CC
(V)
Output Power Po, Pomax (W)
0
10
Output Power vs. Supply Voltage
60
40
30
10
Pomax (Booster OFF)
Po (THD = 10 %, Booster ON)
Po (THD = 10 %, Booster OFF)
Pomax (Booster ON)
R
L
= 4
, f = 1 kHz
8
10
12
14
16
18
20
Supply Voltage V
CC
(V)
0
Quiescent current vs. Supply Voltage
400
300
200
100
Quiescent current I
Q
(mA)
0
Booster ON
Booster OFF
R
L
=
HA13156
7
Frequency f (Hz)
Total Harmonic Distortion THD (%)
Total Harmonic Distortion vs. Frequency (1)
20
50
100 200
500
1k
2k
5k
5
10k 20k
2
0.5
1
0.2
0.1
0.01
0.02
0.05
V
CC
= 13.2 V, R
L
= 4
, Booster ON
Po = 1.5 W (Ch1Ch4)
Po = 8 W (Ch1Ch4)
Frequency f (Hz)
Total Harmonic Distortion THD (%)
Total Harmonic Distortion vs. Frequency (2)
20
50
100 200
500
1k
2k
5k
5
10k 20k
2
0.5
1
0.2
0.1
0.01
0.02
0.05
V
CC
= 13.2 V, R
L
= 4
, Booster OFF
Po = 1.5 W (Ch1Ch4)
Po = 8 W (Ch1Ch4)
HA13156
8
Total Harmonic Distortion vs. Output Power (1)
Output Power Po (W)
Total Harmonic Distortion THD (%)
0.02
0.05 0.1
0.2
0.5
1
2
5
5
10
10
20
2
0.5
1
0.2
0.1
0.01
0.02
0.05
0.01
V
CC
= 13.2 V, R
L
= 4
, Booster OFF
f = 100 Hz (Ch1Ch4)
f = 1 kHz (Ch1Ch4)
f = 10 kHz (Ch1Ch4)
Total Harmonic Distortion vs. Output Power (2)
Output Power Po (W)
Total Harmonic Distortion THD (%)
0.02
0.05 0.1
0.2
0.5
1
2
5
5
10
10
20 30
2
0.5
1
0.2
0.1
0.01
0.02
0.05
0.01
f = 100 Hz (Ch1Ch4)
f = 1 kHz (Ch1Ch4)
f = 10 kHz (Ch1Ch4)
V
CC
= 13.2 V, R
L
= 4
, Booster ON
HA13156
9
Frequency f (Hz)
Crosstalk C
T
(dB)
Crosstalk vs. Frequency (1)
20
50
100
200
500
1k
2k
5k
90
10k
80
60
70
50
40
10
20
30
V
CC
= 13.2 V, Vout = 6.7 Vrms,
Input Ch1, Booster ON
Ch2
Ch3
Ch4
Frequency f (Hz)
Crosstalk C
T
(dB)
Crosstalk vs. Frequency (2)
20
50
100
200
500
1k
2k
5k
90
10k
80
60
70
50
40
10
20
30
V
CC
= 13.2 V, Vout = 6.7 Vrms,
Input Ch1, Booster OFF
Ch2
Ch3
Ch4
HA13156
10
Frequency f (Hz)
Crosstalk C
T
(dB)
Crosstalk vs. Frequency (3)
20
50
100
200
500
1k
2k
5k
90
10k
80
60
70
50
40
10
20
30
V
CC
= 13.2 V, Vout = 6.7 Vrms,
Input Ch2, Booster ON
Ch1
Ch3
Ch4
Frequency f (Hz)
Crosstalk C
T
(dB)
Crosstalk vs. Frequency (4)
20
50
100
200
500
1k
2k
5k
90
10k
80
60
70
50
40
10
20
30
V
CC
= 13.2 V, Vout = 6.7 Vrms,
Input Ch2, Booster OFF
Ch1
Ch3
Ch4
HA13156
11
Frequency f (Hz)
Crosstalk C
T
(dB)
Crosstalk vs. Frequency (5)
20
50
100
200
500
1k
2k
5k
90
10k
80
60
70
50
40
10
20
30
V
CC
= 13.2 V, Vout = 6.7 Vrms,
Input Ch3, Booster ON
Ch1
Ch2
Ch4
Frequency f (Hz)
Crosstalk C
T
(dB)
Crosstalk vs. Frequency (6)
20
50
100
200
500
1k
2k
5k
90
10k
80
60
70
50
40
10
20
30
V
CC
= 13.2 V, Vout = 6.7 Vrms,
Input Ch3, Booster OFF
Ch1
Ch2
Ch4
HA13156
12
Frequency f (Hz)
Crosstalk C
T
(dB)
Crosstalk vs. Frequency (7)
20
50
100
200
500
1k
2k
5k
90
10k
80
60
70
50
40
10
20
30
V
CC
= 13.2 V, Vout = 6.7 Vrms,
Input Ch4, Booster ON
Ch1
Ch2
Ch3
Frequency f (Hz)
Crosstalk C
T
(dB)
Crosstalk vs. Frequency (8)
20
50
100
200
500
1k
2k
5k
90
10k
80
60
70
50
40
10
20
30
V
CC
= 13.2 V, Vout = 6.7 Vrms,
Input Ch4, Booster OFF
Ch1
Ch2
Ch3
HA13156
13
Supply Voltage Rejection Ratio SVR (dB)
Supply Voltage Rejection Ratio vs. Frequency (1)
20
50
100
200
500
1k
2k
5k
80
10k
70
50
60
40
30
0
10
20
V
CC
= 13.2 V, R
L
= 4
, Vripple = 0 dBm,
Booster ON, Rg = 620
Frequency f (Hz)
Ch1
Ch2
Ch3
Ch4
Supply Voltage Rejection Ratio SVR (dB)
Supply Voltage Rejection Ratio vs. Frequency (2)
20
50
100
200
500
1k
2k
5k
80
10k
70
50
60
40
30
0
10
20
V
CC
= 13.2 V, R
L
= 4
, Vripple = 0 dBm,
Booster OFF, Rg = 620
Frequency f (Hz)
Ch1
Ch2
Ch3
Ch4
HA13156
14
Wide Band Noise vs. Signal Source Resistance (2)
Wide Band Noise WBN (mV)
Wide Band Noise vs. Signal Source Resistance (1)
Signal Source Resistance Rg (
)
20
50
100 200
500
1k
2k
5k
5
10k 20k
2
0.5
1
0.2
0.1
0.01
0.02
0.05
50k
V
CC
= 13.2 V, R
L
= 4
,
Vin = 0, Booster ON
Wide Band Noise WBN (mV)
Signal Source Resistance Rg (
)
20
50
100 200
500
1k
2k
5k
5
10k 20k
2
0.5
1
0.2
0.1
0.01
0.02
0.05
50k
V
CC
= 13.2 V, R
L
= 4
,
Vin = 0, Booster OFF
Mute ON Ch1Ch4
Mute OFF Ch1Ch4
Mute ON Ch1Ch4
Mute OFF Ch1Ch4
HA13156
15
Frequency f (Hz)
Power Dissipation P
T
(W)
Power Dissipation vs. Frequency
20
50
100 200
500
1k
2k
5k
15
10k 20k
10
5
0
V
CC
= 13.2 V, R
L
= 4
, Po = 10 W, 1ch operation
Power Dissipation P
T
(W)
Power Dissipation vs. Output Power
Output Power Po (W)
0.02
0.05 0.1
0.2
0.5
1
2
5
10
20
50
100
20
10
1
2
5
R
L
= 4
, f = 1 kHz, 1ch operation
Booster OFF (Ch1Ch4)
Booster ON (Ch1Ch4)
Booster ON (Ch1Ch4)
Booster OFF (Ch1Ch4)
V
CC
= 16 V
V
CC
= 13.2 V
Booster OFF (Ch1Ch4)
Booster ON (Ch1Ch4)
HA13156
16
Gain G
V
(dB)
Gain vs. Frequency
Frequency f (Hz)
40
35
30
25
20
15
10
5
0
V
CC
= 13.2 V, R
L
= 4
, V
OUT
= 0 dBm,
Booster ON and OFF
20
50 100 200 500 1k 2k
5k 10k 20k
50k 100k 200k 500k 1M
(Ch1Ch4)
HA13156
17
Package Dimensions
Unit: mm
R1.84
0.19
4.32
0.05
19.81
30.18
0.25
2.79
10.70
0.12
3.80
0.05
+ 0.05
0.1
1.55
4.50
0.12
17.78
0.25
4.14
0.33
4.29
5.08
+ 0.06
0.04
0.40
3.80
0.05
17.50
0.13
Hitachi Code
JEDEC Code
EIAJ Code
Weight
SP-28TA
--
--
--
28
1
0.5
0.10
1.0 Typ
27.0 Typ
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
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: http://www.hitachi-eu.com/hel/ecg
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: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
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: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
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3F, Hung Kuo Building. No.167,
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Tel: <886> (2) 2718-3666
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For further information write to: