HAT1024R
Silicon P Channel Power MOS FET
High Speed Power Switching
ADE-208-476 G (Z)
8th. Edition
June 1997
Features
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Outline
SOP8
1 2
3
4
5
6
7
8
G
D
S
D
G
D
S
D
MOS1
MOS2
1
2
7 8
4
5 6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
HAT1024R
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
3.5
A
Drain peak current
I
D(pulse)
Note1
28
A
Bodydrain diode reverse drain current I
DR
3.5
A
Channel dissipation
Pch
Note2
2
W
Channel dissipation
Pch
Note3
3
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. PW
10
s, duty cycle
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
HAT1024R
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
--
--
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
10
A
V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.5
V
V
DS
= 10V,
I
D
= 1mA
Static drain to source on state
R
DS(on)
--
0.12
0.16
I
D
= 2A, V
GS
= 10V
Note4
resistance
R
DS(on)
--
0.2
0.34
I
D
= 2A, V
GS
= 4V
Note4
Forward transfer admittance
|y
fs
|
2.5
3.5
--
S
I
D
= 2A, V
DS
= 10V
Note4
Input capacitance
Ciss
--
350
--
pF
V
DS
= 10V
Output capacitance
Coss
--
230
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
75
--
pF
f = 1MHz
Turn-on delay time
t
d(on)
--
18
--
ns
V
GS
= 4V, I
D
= 2A
Rise time
t
r
--
110
--
ns
V
DD
10V
Turn-off delay time
t
d(off)
--
20
--
ns
Fall time
t
f
--
30
--
ns
Bodydrain diode forward
voltage
V
DF
--
1.0
1.5
V
IF = 3.5A, V
GS
= 0
Note4
Bodydrain diode reverse
recovery time
t
rr
--
60
--
ns
IF = 3.5A, V
GS
= 0
diF/ dt =20A/
s
Note:
4. Pulse test
HAT1024R
4
Main Characteristics
4.0
3.0
2.0
1.0
0
50
100
150
200
0.1
100
10
1
0.1
0.01
0.3
1
3
10
30
100
30
3
0.3
0.03
10
s
100
s
PW = 10 ms
1 ms
20
16
12
8
4
0
2
4
6
8
10
V = 2.5 V
GS
10 V
5 V
4 V
3.5 V
3 V
20
16
12
8
4
0
2
4
6
8
10
Tc = 25
C
75
C
25
C
8 V
6 V
4.5 V
Channel Dissipation Pch (W)
Ambient Temperature Ta (
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
2 Drive Operation
1 Drive Operation
Operation in
this area is
limited by R
DS(on)
Pulse Test
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Note 5
DC Operation (PW < 10 s)
Ta = 25
C
1 shot Pulse
1 Drive Operation
V = 10 V
Pulse Test
DS
HAT1024R
5
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
10
1
0.2
0.5
0.1
0.02
0.05
2
20
0.2
0.5
1
2
5
10
40
0
40
80
120
160
0.5
0.4
0.3
0.2
0.1
0
2 A, 1 A, 0.5 A
10 V
0.1
10
2
5
1
0.2
0.5
0.2
0.5
1
2
5
10 20
0.5 A
D
I = 2 A
1 A
10 V
V = 4 V
GS
V = 4 V
GS
1 A, 0.5 A
I = 2 A
D
Tc = 25
C
75
C
25
C
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Drain Current I (A)
D
V = 10 V
Pulse Test
DS
Pulse Test
Pulse Test
Pulse Test
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