HAT2039R
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-667C (Z)
4th. Edition
February 1999
Features
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
SOP8
1 2
3
4
5
6
7
8
G
D
S
D
G
D
S
D
MOS1
MOS2
1
2
7 8
4
5 6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
HAT2039R
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
12
V
Drain current
I
D
8.0
A
Drain peak current
I
D(pulse)
Note1
64
A
Body-drain diode reverse drain current
I
DR
8.0
A
Channel dissipation
Pch
Note2
2.0
W
Channel dissipation
Pch
Note3
3.0
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to + 150
C
Note:
1. PW
10
s, duty cycle
1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
Electrical Characteristics (Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
--
--
0.1
A
V
GS
=
12 V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
1
A
V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
0.4
--
1.4
V
V
DS
= 10 V,
I
D
= 1 mA
Static drain to source on state
R
DS(on)
--
0.017
0.022
I
D
= 4 A, V
GS
= 4 V
Note4
resistance
R
DS(on)
--
0.022
0.032
I
D
= 4 A, V
GS
= 2.5 V
Note4
Forward transfer admittance
|y
fs
|
13
20
--
S
I
D
= 4 A, V
DS
= 10 V
Note4
Input capacitance
Ciss
--
1420
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
410
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
260
--
pF
f = 1MHz
Total gate charge
Qg
--
20
--
nc
V
DD
= 10 V
Gate to source charge
Qgs
--
12
--
nc
V
GS
= 4 V
Gate to drain charge
Qgd
--
8
--
nc
I
D
= 8 A
Turn-on delay time
t
d(on)
--
23
--
ns
V
GS
= 4 V, I
D
= 4 A
Rise time
t
r
--
165
--
ns
V
DD
10 V
Turn-off delay time
t
d(off)
--
215
--
ns
Fall time
t
f
--
185
--
ns
Bodydrain diode forward voltage
V
DF
--
0.85
1.1
V
IF = 8.0 A, V
GS
= 0
Note4
Bodydrain diode reverse
recovery time
t
rr
--
30
--
ns
IF = 8.0 A, V
GS
= 0
diF/ dt = 20 A/
s
Note:
4. Pulse test
HAT2039R
3
Main Characteristics
Channel Dissipation Pch (W)
Ambient Temperature Ta (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
4.0
3.0
2.0
1.0
0
50
100
150
200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
10 s
1 ms
PW = 10 ms
50
40
30
20
10
0
2
4
6
8
10
10 V
V = 1.5 V
GS
4 V
20
16
12
8
4
0
1
2
3
4
5
Tc = 25 C
75 C
25 C
2 Drive Operation
1 Drive Operation
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = 10 V
Pulse Test
DS
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Note 5
DC Operation (PW < 10 s)
Ta = 25 C
1 shot Pulse
1 Drive Operation
100 s
2.5 V
2 V
HAT2039R
4
Gate to Source Voltage V (V)
GS
Drain to Source Voltage V (V)
DS(on)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
0.25
0.2
0.15
0.1
0.05
0
2
4
6
8
10
2 A
1 A
I = 5 A
D
0.2
0.5
1
2
5
10
20
0.2
0.1
0.02
0.05
0.01
0.005
0.10
0.08
0.06
0.04
0.02
40
0
40
80
120
160
0
1 A, 2 A, 5 A
0.2
0.5
1
2
5
10
20
20
10
2
5
1
0.5
Pulse Test
Pulse Test
0.002
4 V
V = 2.5 V
GS
Pulse Test
4 V
V = 2.5 V
GS
50
25 C
Tc = 25 C
75 C
DS
V = 10 V
Pulse Test
ID=1 A, 2 A, 5 A
HAT2039R
5
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
0.2
0.5
1
2
5
10
500
200
100
20
50
10
5
0
10
20
30
40
50
10000
3000
1000
300
100
30
10
V = 0
f = 1 MHz
GS
50
40
30
20
10
0
10
8
6
4
2
4
8
12
16
20
0
0.1
di/dt = 20 A/s
V = 0, Ta = 25C
GS
Ciss
Coss
Crss
V
GS
V
DS
V = 5 V
10 V
20 V
DD
V = 20 V
10 V
5 V
DD
I = 8 A
D
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
0.2
0.5
1
2
5
10
500
200
100
20
50
10
5
0.1
t f
r
t
d(on)
t
d(off)
t
V = 4 V, V = 10 V
PW = 3 s, duty < 1 %
GS
DD
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