HAT2044R
Silicon N Channel Power MOS FET
Power Switching
ADE-208-722A (Z)
2nd Edition
February 1999
Features
Capable of 2.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 6.5 m
typ (at V
GS
= 4.5V)
Outline
SOP8
1 2
3
4
5
6
7
8
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
G
D
S S S
D D D
4
1 2
3
5 6
7 8
HAT2044R
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
12
V
Drain current
I
D
15
A
Drain peak current
I
D(pulse)
Note1
120
A
Body-drain diode reverse drain current
I
DR
15
A
Channel dissipation
Pch
Note2
2.5
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to + 150
C
Note:
1. PW
10
s, duty cycle
1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
Electrical Characteristics (Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
--
--
0.1
A
V
GS
=
12 V, V
DS
= 0
Zero gate voltege drain current
I
DSS
--
--
1
A
V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
0.4
--
1.4
V
V
DS
= 10 V,
I
D
= 1 mA
Static drain to source on state
R
DS(on)
--
6.5
9.0
m
I
D
= 8 A, V
GS
= 4.5 V
Note3
resistance
R
DS(on)
--
7.0
9.5
m
I
D
= 8 A, V
GS
= 4.0 V
Note3
R
DS(on)
--
9.0
13.0
m
I
D
= 8 A, V
GS
= 2.5 V
Note3
Forward transfer admittance
|y
fs
|
24
40
--
S
I
D
= 8 A, V
DS
= 10 V
Note3
Input capacitance
Ciss
--
3420
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
950
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
480
--
pF
f = 1 MHz
Total gate charge
Qg
--
48
--
nc
V
DD
= 10 V
Gate to source charge
Qgs
--
32
--
nc
V
GS
= 4 V
Gate to drain charge
Qgd
--
16
--
nc
I
D
= 15 A
Turn-on delay time
t
d(on)
--
45
--
ns
V
GS
= 4 V, I
D
= 8 A
Rise time
t
r
--
285
--
ns
V
DD
10 V
Turn-off delay time
t
d(off)
--
470
--
ns
Fall time
t
f
--
360
--
ns
Bodydrain diode forward voltage
V
DF
--
0.85
1.1
V
IF = 15 A, V
GS
= 0
Note3
Bodydrain diode reverse
recovery time
t
rr
--
45
--
ns
IF = 15 A, V
GS
= 0
diF/ dt = 20 A/
s
Note:
3. Pulse test
HAT2044R
3
Main Characteristics
Channel Dissipation Pch (W)
Ambient Temperature Ta (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
50
40
30
20
10
0
2
4
6
8
10
50
40
30
20
10
0
1
2
3
4
5
Tc = 75C
25C
25C
4.0
3.0
2.0
1.0
0
50
100
150
200
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
V = 10 V
Pulse Test
DS
500
Ta = 25 C
1 shot Pulse
PW = 10 ms
10 s
100 s
Operation in
this area is
limited by R
DS(on)
Note 4
DC Operation (PW < 10 s)
1 ms
V = 1.5 V
GS
10V
4 V
2.0 V
Pulse Test
HAT2044R
4
Gate to Source Voltage V (V)
GS
Drain to Source Voltage V (V)
DS(on)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (C)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
0.20
0.16
0.12
0.08
0.04
0
2
4
6
8
10
20
10
2
5
1
0.5
2
5
20
50
20
16
12
8
4
40
0
40
80
120
160
0
Pulse Test
I = 10 A
D
2 A
5 A
0.1
1
10
100
0.2
100
50
V = 4 V
GS
2.5 V
Pulse Test
R (m )
DS(on)
I = 2 A, 5 A, 10 A
D
2 A, 5 A, 10 A
V = 4 V
GS
4.5 V
Pulse Test
3
30
0.1
1
10
100
0.3
10
100
30
1
0.3
3
0.1
Tc = 25 C
DS
V = 10 V
Pulse Test
75 C
25 C
4.5 V
2 A, 5 A, 10 A
2.5 V
HAT2044R
5
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
BodyDrain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
0.2
0.5
1
2
5
10
20
100
20
50
10
0
10
20
30
40
50
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
50
40
30
20
10
0
10
8
6
4
2
20
40
60
80
100
0
1000
200
500
100
20
50
10
0.1
di/dt = 20 A/s
V = 0, Ta = 25C
GS
V
GS
V
DS
V = 5 V
10 V
20 V
DD
V = 20 V
10 V
5 V
DD
I = 15 A
D
0.2
0.5
1
2
5
10
20
0.1
V = 4 V, V = 10 V
RG = 50 , duty < 1 %
GS
DS
t f
r
t
d(off)
t
d(on)
t
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