Document Outline
- Description
- Features
- Ordering Information
- Pin Arrangement
- Pin Description
- Block Diagram
- Operation Table
- Absolute Maximum Ratings
- Recommended DC Operating Conditions
- DC Characteristics
- Capacitance
- AC Characteristics
- Timing Waveforms
- Read Timing Waveform (1) (WE = VIH )
- Read Timing Waveform (2) (WE = VIH , CS = VIL , OE = VIL )
- Read Timing Waveform (3) (WE = VIH, CS = VIL, OE = VIL)
- Write Timing Waveform (1) (WE Controlled)
- Write Timing Waveform (2) (CS Controlled)
- Low V CC Data Retention Characteristics
- Low VCC Data Retention Timing Waveform
- Package Dimensions
- HM621400HJP/HLJP Series (CP-32DB)
HM621400H Series
4M High Speed SRAM (4-Mword
1-bit)
ADE-203-787D (Z)
Rev. 1.0
Sep. 15, 1998
Description
The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword
1-bit. It has realized high speed
access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit
designing technology. It is most appropriate for the application which requires high speed and high density
memory, such as cache and buffer memory in system. The HM621400H is packaged in 400-mil 32-pin SOJ
for high density surface mounting.
Features
Single 5.0 V supply : 5.0 V
10 %
Access time 10/12/15 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 200/180/160 mA (max)
TTL standby current: 70/60/50 mA (max)
CMOS standby current: 5 mA (max)
: 1.2 mA (max) (L-version)
Data retension current: 0.8 mA (max) (L-version)
Data retension voltage: 2 V (min) (L-version)
Center V
CC
and V
SS
type pinout
HM621400H Series
2
Ordering Information
Type No.
Access time
Package
HM621400HJP-10
HM621400HJP-12
HM621400HJP-15
10 ns
12 ns
15 ns
400-mil 32-pin plastic SOJ (CP-32DB)
HM621400HLJP-10
HM621400HLJP-12
HM621400HLJP-15
10 ns
12 ns
15 ns
Pin Arrangement
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A0
A1
A2
A3
A4
A5
CS
V
CC
V
SS
Din
WE
A6
A7
A8
A9
A10
A21
A20
A19
A18
A17
A16
OE
V
SS
V
CC
Dout
A15
A14
A13
A12
A11
NC
(Top view)
HM621400HJP/HLJP Series
HM621400H Series
3
Pin Description
Pin name
Function
A0 to A21
Address input
Din
Data input
Dout
Data output
CS
Chip select
OE
Output enable
WE
Write enable
V
CC
Power supply
V
SS
Ground
NC
No connection
Block Diagram
A11 A9 A10A20
V
CC
V
SS
Memory matrix
256 rows
64 columns
256 blocks
1 bit
(4,194,304 bits)
Internal
voltage
generater
Row
decoder
Column I/O
Column decoder
Din
CS
WE
A5
Dout
A2
A18
A8
A12
A17
A3
A7
A6
(LSB)
(MSB)
CS
OE
CS
(LSB)
A21 A0 A13 A14 A15 A1 A19 A16 A4
CS
(MSB)
HM621400H Series
4
Operation Table
CS
OE
WE
Mode
V
CC
current
Dout
Ref. cycle
H
Standby
I
SB
, I
SB1
High-Z
--
L
H
H
Output disable
I
CC
High-Z
--
L
L
H
Read
I
CC
Dout
Read cycle (1) to (3)
L
H
L
Write
I
CC
High-Z
Write cycle (1)
L
L
L
Write
I
CC
High-Z
Write cycle (2)
Note:
: H or L
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V
SS
V
CC
0.5 to +7.0
V
Voltage on any pin relative to V
SS
V
T
0.5*
1
to V
CC
+0.5*
2
V
Power dissipation
P
T
1.0
W
Operating temperature
Topr
0 to +70
C
Storage temperature
Tstg
55 to +125
C
Storage temperature under bias
Tbias
10 to +85
C
Notes: 1. V
T
(min) = 2.0 V for pulse width (under shoot)
8 ns
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
8 ns
Recommended DC Operating Conditions (Ta = 0 to +70
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
*
3
4.5
5.0
5.5
V
V
SS
*
4
0
0
0
V
Input voltage
V
IH
2.2
--
V
CC
+ 0.5*
2
V
V
IL
0.5*
1
--
0.8
V
Notes: 1. V
IL
(min) = 2.0 V for pulse width (under shoot)
8 ns
2. V
IH
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
8 ns
3. The supply voltage with all V
CC
pins must be on the same level.
4. The supply voltage with all V
SS
pins must be on the same level.
HM621400H Series
5
DC Characteristics (Ta = 0 to +70
C, V
CC
= 5.0 V
10 %, V
SS
= 0V)
Parameter
Symbol Min
Typ*
1
Max
Unit
Test conditions
Input leakage current
II
LI
I
--
--
2
A
Vin = V
SS
to V
CC
Output leakage current
II
LO
I
--
--
2
A
Vin = V
SS
to V
CC
Operation power
supply current
10 ns cycle I
CC
--
--
200
mA
Min cycle
CS
= V
IL
, lout = 0 mA
Other inputs = V
IH
/V
IL
12 ns cycle I
CC
--
--
180
15 ns cycle I
CC
--
--
160
Standby power supply
current
10 ns cycle I
SB
--
--
70
mA
Min cycle,
CS
= V
IH
,
Other inputs = V
IH
/V
IL
12 ns cycle I
SB
--
--
60
15 ns cycle I
SB
--
--
50
I
SB1
--
0.1
5
mA
f = 0 MHz
V
CC
CS
V
CC
- 0.2 V,
(1) 0 V
Vin
0.2 V or
(2) V
CC
Vin
V
CC
- 0.2 V
--*
2
0.1*
2
1.2*
2
Output voltage
V
OL
--
--
0.4
V
I
OL
= 8 mA
V
OH
2.4
--
--
V
I
OH
= 4 mA
Notes: 1. Typical values are at V
CC
= 5.0 V, Ta = +25
C and not guaranteed.
2. This characteristics is guaranteed only for L-version.
Capacitance (Ta = +25
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input capacitance*
1
Cin
--
--
6
pF
Vin = 0 V
C
DIN
--
--
8
pF
V
DIN
= 0 V
Input/output capacitance*
1
C
DOUT
--
--
8
pF
V
DOUT
= 0 V
Note: 1. This parameter is sampled and not 100% tested.
PDF 
ZIP