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Электронный компонент: HM62832UH

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HM62832UH Series
256 k High Speed SRAM (32-kword
8-bit)
Features
High speed: Fast access time 15/20 ns (max)
Low Power
Standby: 15
W (typ) (L-version)
Operation: 675/600 mW (typ)
Single 5 V supply
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Common data input and output: Three state output
Directly TTL compatible: All inputs and outputs
Ordering Information
Type No.
Access Time
Package
HM62832UHP-15
HM62832UHP-20
15 ns
20 ns
300-mil 28-pin plastic DIP (DP-28NA)
HM62832UHLP-15
HM62832UHLP-20
15 ns
20 ns
HM62832UHJP-15
HM62832UHJP-20
15 ns
20 n
300-mil 28-pin plastic SOJ (CP-28DN)
HM62832UHLJP-15
HM62832UHLJP-20
15 ns
20 ns
HM62832UH Series
2
Pin Arrangement
(Top view)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
V
CC
WE
A13
A8
A9
A11
OE
A10
CS
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
V
SS
Pin Description
Pin name
Function
A0 A14
Address
I/O0 I/O7
Input/output
CS
Chip select
WE
Write enable
OE
Output enable
V
CC
Power supply
V
SS
Ground
HM62832UH Series
3
Block Diagram


A8
A13
A14
A12
A7
A6
A5
A4
A3
I/O0
I/O7
WE
OE
CS
A10 A0 A1 A2 A9 A11
I/O
Buffer
Column I/O
Column Address Buffer
Column Decoder
Memory Array
512 512
Row
Decoder
X-Address
Buffers
V
V
CC
SS
Function Table
CS
OE
WE
Mode
V
CC
Current
I/O Pin
Ref. Cycle
H
X
X
Standby
I
SB
, I
SB1
High-Z
L
L
H
Read
I
CC
Dout
Read cycle 1, 2, 3
L
H
L
Write
I
CC
Din
Write cycle 1
L
L
L
Write
I
CC
Din
Write cycle 2
Note:
X : H or L
HM62832UH Series
4
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage
*1
V
CC
0.5
*2
to +7.0
V
Voltage on any pin relative to V
SS
*1
V
T
0.5
*2
to V
CC
+ 0.5
V
Power dissipation
P
T
1.0
W
Operating temperature
Topr
0 to +70
C
Storage temperature
Tstg
55 to +125
C
Storage temperature under bias
Tbias
10 to +85
C
Notes: 1. With respect to V
SS
2. V
CC
and V
T
min = 2.5 V for pulse width
10 ns
Recommended DC Operating Conditions (Ta = 0 to +70
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
4.5
5.0
5.5
V
V
SS
0
0
0
V
Input high (logic 1) voltage
V
IH
2.2
--
V
CC
+ 0.5
V
Input low (logic 0) voltage
V
IL
0.5
*1
--
0.8
V
Note:
1. V
IL
min = 2.0 V for pulse width
10 ns
HM62832UH Series
5
DC Characteristics (Ta = 0 to +70
C, V
CC
= 5 V
10%, V
SS
= 0 V)
Parameter
Symbol
Min
Typ
*1
Max
Unit
Test Conditions
Input leakage current
|I
LI
|
--
--
2.0
A
V
CC
= 5.5 V
Vin = V
SS
to V
CC
Output leakage current
|I
LO
|
--
--
2.0
A
CS
= V
IH
V
I/O
= V
SS
to V
CC
Operating V
CC
current
I
CC1
(-15)
*3
--
135
170
mA
min cycle
*2
I
CC2
(-15)
--
100
120
mA
2x min cycle
I
CC1
(-20)
--
120
150
mA
min cycle
I
CC2
(-20)
--
90
110
mA
2x min cycle
Standby V
CC
current
I
SB
(-15)
--
40
60
mA
CS
= V
IH
, min cycle
I
SB
(-20)
--
30
50
Standby V
CC
current (1)
I
SB1
(L-version) --
0.02
2.0
mA
CS
V
CC
0.2 V
0 V
Vin
0.2 V or
V
CC
0.2 V
Vin
--
0.003
0.1
Output low voltage
V
OL
--
--
0.4
V
I
OL
= 8 mA
Output high voltage
V
OH
2.4
--
--
V
I
OH
= 4.0 mA
Notes: 1. Typical values are at V
CC
= 5.0 V, Ta = 25
C and not guaranteed.
2.
CS
= V
IL
, Iout = 0 mA
3. Access time version
Capacitance (Ta = 25
C, f = 1.0 MHz)
*1
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input capacitance
Cin
--
--
6
pF
Vin = 0 V
Output capacitance
Cout
--
--
10
pF
V
I/O
= 0 V
Note:
1. This parameter is sampled and not 100% tested.