PDE-N400GS12BW-0
I
I
I
IG
G
G
GB
B
B
BT
T
T
T M
M
M
MOD
OD
OD
ODU
U
U
UL
L
L
LE
E
E
E
MBN400GS12BW
Silicon N-channel IGBT OUTLINE DRAWING
F
F
F
FEA
EA
EA
EAT
T
T
TU
U
U
URE
RE
RE
RES
S
S
S
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
C
)
Item
Symbol
Unit
MBN400GS12BW
Collector Emitter Voltage
V
CES
V
1,200
Gate Emitter Voltage
V
GES
V
20
Collector Current
DC
I
C
400
1ms
I
Cp
A
800
Forward Current
DC
I
F
400 (1)
1ms
I
FM
A
800
Collector Power Dissipation
Pc
W
2,000
Junction Temperature
T
j
C
-40 ~ +150
Storage Temperature
T
stg
C
-40 ~ +125
Isolation Voltage
V
ISO
V
RMS
2,500(AC 1 minute)
Screw Torque
Terminals
-
1.37(14)/2.94(30) (2)
Mounting
-
N.m
(kgf.cm)
2.94(30) (3)
Notes:(1)RMS Current of Diode 180Arms max.
(2)Recommended Value 1.18/2.45N.m(12/25kgf.cm) (3)Recommended Value 2.45N.m(25kgf.cm)
CHARACTERISTICS (Tc=25
C
)
Item
Symbol Unit
Min. Typ. Max.
Test Conditions
Collector Emitter Cut-Off Current
I
CES
mA
-
-
1.0 V
CE
=1,200V,V
GE
=0V
Gate Emitter Leakage Current
I
GES
nA
-
-
500 V
GE
=20V,V
CE
=0V
Collector Emitter Saturation Voltage
V
CE(sat)
V
-
2.7
3.4 I
C
=400A,V
GE
=15V
Gate Emitter Threshold Voltage
V
GE(TO)
V
-
-
10
V
CE
=5V, I
C
=400mA
Input Capacitance
C
ies
pF
-
37,000
-
V
CE
=10V,V
GE
=0V,f=1MHz
Rise Time
t
r
-
0.25
0.5 V
CC
=600V
Turn On Time
t
on
-
0.4
0.7 R
L
=1.5W
Fall Time
t
f
-
0.25
0.35 R
G
=2.7W (4)
Switching Times
Turn Off Time
t
off
ms
-
0.75
1.1 V
GE
=15V
Peak Forward Voltage Drop
V
FM
V
-
-
3.5 I
F
=400A,V
GE
=0V
Reverse Recovery Time
t
rr
ms
-
-
0.4 I
F
=400A,V
GE
=-10V, di/dt=400A/ms
IGBT
Rth(j-c)
-
-
0.06
Thermal Impedance
FWD
Rth(j-c)
C/W
-
-
0.12
Junction to case
Notes:(4) R
G
value is the test condition's value for decision of the switching times, not recommended value.
Determine the suitable R
G
value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
Weight: 480 (g)
TERMINALS
E
C
G
E
Unit in mm
VGE
=
15V 13V12V
800
0
2
4
6
8
10
400
600
200
0
800
600
200
400
0
11V
TYPICAL
10V
9V
Collector Current, Ic (A)
Collector to Emitter Voltage, V
CE
(V)
Collector current vs. Collector to Emitter voltage
Ic
=
400A
Ic
=
800A
10
8
6
4
2
0
0
5
10
15
20
TYPICAL
Collector to Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, V
GE
(V)
Ic
=
800A
Ic
=
400A
Collector to Emitter voltage vs. Gate to Emitter voltage
20
15
10
5
0
0
500
1000
1500
2000
3000
2500
TYPICAL
TYPICAL
Vcc
=
600V
Ic
=
400A
Tc
=
25
C
Gate to Emitter
V
oltage
,
V
GE
(V)
Gate Charge, Q
G
(nc)
Gate charge characteristics
600
800
400
200
0
0
1
2
3
4
5
F
orw
ard Current, I
F
(A)
Forward Voltage, V
F
(V)
Forward voltage of free-wheeling diode
10
8
6
4
2
0
0
5
10
15
20
TYPICAL
Collector to Emitter
V
oltage
,
V
CE
(V)
Gate to Emitter Voltage, V
GE
(V)
Collector to Emitter voltage vs. Gate to Emitter voltage
0
2
4
6
8
10
11V
TYPICAL
10V
9V
Tc
=
125
C
Collector Current, Ic (A)
Collector to Emitter Voltage, V
CE
(V)
Collector current vs. Collector to Emitter voltage
PDE-N400GS12BW-0
Tc
=
25
C
14V
VGE
=
15V 13V12V
14V
V
GE
=
0
Tc
=
25
C
Tc
=
125
C
Tc
=
125
C
Tc
=
25
C
Pc
=
2000W
1.5
1.0
0.5
0
0
100
200
300
400
500
TYPICAL
TYPICAL
TYPICAL
Switching
Time
, t (
m
s)
Collector Current, I
C
(A)
Switching time vs. Collector current
tr
tf
ton
toff
Vcc
=
600V
V
GE
=
15V
R
G
=
2.7
W
T
C
=
25
C
Resistive Load
40
60
80
20
0
0
100
300
200
400
500
Switching Loss
, Et
on
,Et
off
, E
rr
(mJ/pulse)
Collector Current, I
C
(A)
Switching loss vs. Collector current
10
1
0.1
1
10
100
Switching
Time
, t (
m
s)
Gate Resistance, R
G
(
W
)
Switching time vs. Gate resistance
tr
tf
ton
toff
V
CC
=
600V
V
GE
=
15V
I
C
=
400A
T
C
=
25
C
Resistive Load
TYPICAL
100
10
1
1
10
100
Switching Loss
, Et
on
, Et
off
(mJ/pulse)
Gate Resistance, R
G
(
W
)
Switching loss vs. Gate resistance
V
CC
=
600V
V
GE
=
15V
I
C
=
400A
T
C
=
125
C
Inductive Load
Err
Err
Eton
Etoff
Vcc
=
600V
V
GE
=
15V
R
G
=
2.7
W
T
C
=
125
C
Inductive Load
1000
100
10
1
0.1
0
200
400
600
800
1000
1200
1400
Collector Current, Ic (A)
Collector to Emitter Voltage, V
CE
(V)
Reverse biased safe operating area
Etoff
Eton
1
0.1
0.01
0.001
0.001
0.01
0.1
1
10
T
r
ansient
Ther
mal Impedance
, R
th(j-c)
(
C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
V
GE
=
15V
R
G
=
2.7
W
T
C
125
C
PDE-N400GS12BW-0
1.
The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.
Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.
In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users' fail-safe
precautions or other arrangement. Or consult Hitachi's sales department staff.
4.
In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user's units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.
In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.
No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.
This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.
The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
HITACHI POWER SEMICONDUCTORS
For inquiries relating to the products, please contact nearest overseas representatives which is located
"Inquiry" portion on the top page of a home page.
Notices
Notices
Notices
Notices
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse
PDF 
ZIP