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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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HMC158
GaAs MMIC SMT PASSIVE FREQUENCY
DOUBLER, 1.3 - 4.0 GHz INPUT
v03.0304
General Description
Features
Functional Diagram
Conversion Loss: 15 dB
Fo, 3Fo, 4Fo Isolation: 40 dB
Input Drive Level: 10 to 20 dBm
Electrical Specifi cations,
T
A
= +25 C, As a Function of Drive Level
Typical Applications
The HMC158 is suitable for:
Wireless Local Loop
LMDS, VSAT, and Pt to Pt Radios
UNII & HiperLAN
Test Equipment
The HMC158 is a miniature frequency doubler
in a MMIC die. Suppression of undesired fun-
damental and higher order harmonics is 40 dB
typical with respect to input signal level. The dou-
bler uses the same diode/balun technology used
in Hittite MMIC mixers, features small size and
requires no DC bias.
Input = +10 dBm
Input = +15 dBm
Input = +20 dBm
Parameter
Min.
Typ. Max.
Min.
Typ. Max.
Min.
Typ. Max.
Units
Frequency Range, Input
1.7 - 4.0
1.7 - 3.5
1.3 - 4.0
GHz
Frequency Range, Output
3.4 - 8.0
3.4 - 7.0
2.6 - 8.0
GHz
Conversion Loss
18
22
15
18
15
18
dB
FO Isolation
(with respect to input level)
37
45
dB
3FO Isolation
(with respect to input level)
40
50
dB
4FO Isolation
(with respect to input level)
32
40
dB
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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CONVERSION GAIN (dB)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC158
Conversion Gain vs. Drive Level
Isolation @ +15 dBm Drive Level*
Input Return Loss vs. Drive Level
Output Return Loss vs. Drive Level
v03.0304
GaAs MMIC FREQUENCY
DOUBLER, 1.3 - 4.0 GHz INPUT
*With respect to input level
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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Absolute Maximum Ratings
Outline Drawing
v03.0304
HMC158
NOTES:
1. THREE PADS ON EACH CORNER MUST BE BONDED TO GROUND (12 TOTAL).
2. ALL DIMENSIONS IN INCHES [MILLIMETERS]
3. ALL TOLERANCES ARE 0.025 [0.001]
4. DIE THICKNESS IS 0.254 [0.010]
5. BOND PADS ARE 0.100 [0.004] SQUARE
6. EQUALLY SPACED AT 0.150 [0.006] CENTERS
7. BACKSIDE METALLIZATION: NONE
8. BOND PAD METALLIZATION: GOLD
GaAs MMIC FREQUENCY
DOUBLER, 1.3 - 4.0 GHz INPUT
Input Drive
+27 dBm
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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v03.0304
HMC158
GaAs MMIC FREQUENCY
DOUBLER, 1.3 - 4.0 GHz INPUT
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid clean-
ing systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent
tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet,
tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and fl at.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding wiht a nominal stage tem-
perature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams
is recommended. Use the minimum level of ultrasonic energry to achieve reliable wirebonds. Wirebonds
should be started on the chip and terminated on the package. RF bonds should be as short as possible.
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