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Электронный компонент: HMC190MS8

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MICROWAVE CORPORATION
14 - 36
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC190MS8
GaAs MMIC SPDT SWITCH
DC - 3 GHz
v01.0700
General Description
Features
Functional Diagram
Low Insertion Loss: 0.4dB
Ultra Small Package: MSOP8
High Input IP3: +50 dBm
Positive Control: 0/+3V @ 10 uA
Electrical Specifi cations,
T
A
= +25 C, Vctl = 0/+3 to +8 Vdc
Typical Applications
The HMC190MS8 is ideal for:
MMDS & WirelessLAN
Portable Wireless
The HMC190MS8 is a low cost SPDT switch in
an 8-lead MSOP package. The switch can con-
trol signals from DC to 3.0 GHz. It is especially
suited for low and medium power applications
using positive control voltages. The two control
voltages require a minimal amount of DC current,
which is optimal for battery powered radio sys-
tems at 0.9, 1.9, and 2.4 GHz. The HMC190MS8
design provides exceptional third order intermod-
ulation performance of +50 dBm. The design has
been optimized for the small MSOP package, and
maintains a VSWR of better than 1.2:1 up to 2
GHz. This device is the positive control MSOP8
packaged version of our HMC239S8 negative
control device.
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.4
0.4
0.5
0.7
0.6
0.6
0.8
1.0
dB
dB
dB
dB
Isolation
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
23
23
22
19
27
27
26
22
dB
dB
dB
dB
Return Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
24
20
15
10
28
28
20
16
dB
dB
dB
dB
Input Power for 1 dB Compression
(Vctl = 0/+5V)
0.5 - 1.0 GHz
0.5 - 3.0 GHz
25
23
30
29
dBm
dBm
Input Third Order Intercept
(Vctl = 0/+5V)(Two-tone Input Power = +7 dBm Each Tone)
0.5 - 1.0 GHz
0.5 - 3.0 GHz
45
44
50
49
dBm
dBm
Switching Characteristics
DC - 3.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
3
10
ns
ns
MICROWAVE CORPORATION
14 - 37
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
-3
-2.5
-2
-1.5
-1
-0.5
0
0
0.5
1
1.5
2
2.5
3
INSERTION LOSS (dB)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC190MS8
Insertion Loss
v01.0700
Isolation
Return Loss
-50
-40
-30
-20
-10
0
0
0.5
1
1.5
2
2.5
3
ISOLATION (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0
0.5
1
1.5
2
2.5
3
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
GaAs MMIC SPDT SWITCH
DC - 3 GHz
15
20
25
30
35
3
4
5
6
7
8
9
CONTROL INPUT (Vdc)
1 dB at 1900 MHz
1 dB at 900 MHz
0.1 dB at 1900 MHz
0.1 dB at 900 MHz
45
47
49
51
53
55
4
5
6
7
8
9
INPUT THIRD ORDER
INTERCEPT(dBm)
CONTROL INPUT (Vdc)
900 MHz
1900 MHz
Input 0.1 and 1.0 dB
Compression vs. Control Voltage
Input Third Order
Intercept Point vs. Control Voltage
MICROWAVE CORPORATION
14 - 38
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC190MS8
Compression vs. Control Voltage
Caution: Do not operate in 1dB compression at power levels
above +31dBm (Vctl = +5 Vdc) and do not "hot switch" power
levels greater than +20dBm (Vctl = +5Vdc).
DC blocks are required at ports RFC, RF1 and RF2.
v01.0700
Distortion vs. Control Voltage
GaAs MMIC SPDT SWITCH
DC - 3 GHz
Truth Table
*Control Input Voltage Tolerances are 0.2 Vdc.
Control Input
Third Order Intercept (dBm)
+7 dBm Each Tone
(Vdc)
900 MHz
1900 MHz
+5
50
49
+8
53
51
Carrier at 900 MHz
Carrier at 1900 MHz
Control
Input
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
(Volts)
(dBm)
(dBm)
(dBm)
(dBm)
+3
17
20
17
20
+5
25
30
24
29
+8
31
33
30
32
Control Input*
Control Current
Signal Path State
A
(Vdc)
B
(Vdc)
Ia
(uA)
Ib
(uA)
RF to
RF1
RF to
RF2
0
+3
-10
10
ON
OFF
+3
0
10
-10
OFF
ON
0
+5
-55
55
ON
OFF
+5
0
55
-55
OFF
ON
0
+7
-210
210
ON
OFF
+7
0
210
-210
OFF
ON
0
+8
-280
280
ON
OFF
+8
0
280
-280
OFF
ON
MICROWAVE CORPORATION
14 - 39
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
HMC190MS8
v01.0700
Absolute Maximum Ratings
Outline Drawing
GaAs MMIC SPDT SWITCH
DC - 3 GHz
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Max. Input Power
V
CTL
= 0/+8V
0.5 GHz
0.5 - 2 GHz
+27 dBm
+34 dBm
Control Voltage Range (A & B)
-0.2 to +12 Vdc
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
MICROWAVE CORPORATION
14 - 40
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC190MS8
v01.0700
GaAs MMIC SPDT SWITCH
DC - 3 GHz
Typical Application Circuit
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 5 to 8 Volts applied to the CMOS
logic
gates.
3. DC blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency
of
operation.
4. Highest RF signal power capability is achieved with Vdd = +8V and A/B set to 0/+8V.