MICROWAVE CORPORATION
14 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC199MS8
DUAL SPDT SWITCH
DC - 2.5 GHz
v03.0404
General Description
Features
Functional Diagram
Integrated Dual SPDTs
Low Insertion Loss: <0.5 dB @ 2.0 GHz
Positive Control: 0/+5V
Ultra Small MSOP8 Package: 14.8 mm
2
Electrical Specifi cations,
T
A
= +25 C, Vctl = 0/+5 Vdc, 50 Ohm System
Typical Applications
The HMC199MS8 is ideal for:
Cellular
ISM Basestations
PCS
The HMC199MS8 is a low-cost dual SPDT GaAs
"bypass" switch in an 8-lead MSOP package cover-
ing DC to 2.5 GHz. This four RF port component
integrates two SPDT switches and a through line
onto a single IC. The design provides low insertion
loss of less than 0.5 dB while switching passive or
active external circuit components in and out of the
signal path. Port to port isolations are typically 25
to 30 dB. On-chip circuitry enables positive voltage
control operation at very low DC currents with con-
trol inputs compatible with CMOS and most TTL
logic families. Applications include LNA or fi lter
bypass switching and single bit attenuator switch-
ing.
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
0.3
0.5
0.7
0.6
0.8
1.0
dB
dB
dB
Isolation
DC - 2.0 GHz
DC - 2.5 GHz
22
17
25
21
dB
dB
Return Loss (On State, Any Port)
DC - 2.0 GHz
DC - 2.5 GHz
17
12
20
15
dB
dB
Input Power for 1 dB Compression
0.5 - 2.0 GHz
19
23
dBm
Input Third Order Intercept
(Two-tone Input Power = 0 dBm Each Tone)
0.5 - 2.0 GHz
32
36
dBm
Switching Characteristics
DC - 2.5 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
20
40
ns
ns
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
-3
-2.5
-2
-1.5
-1
-0.5
0
0
0.5
1
1.5
2
2.5
3
+25 C
+85 C
-40 C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
0
0.5
1
1.5
2
2.5
3
RFC1 to RFC2
RFC1 to RF1
RFC2 to RF2
ISOLATION (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
RFC1
RFC2
RF1
RF2
RETURN LOSS (dB)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC199MS8
Return Loss
Insertion Loss
Isolation
v03.0404
Note: Isolation between RF1 - RF2 (when RFC1 -
RFC2 is in insertion loss state) is 25 dB @ 1 GHz and
17 dB @ 2 GHz.
DUAL SPDT SWITCH
DC - 2.5 GHz
MICROWAVE CORPORATION
14 - 62
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC199MS8
v03.0404
DUAL SPDT SWITCH
DC - 2.5 GHz
Compression vs. Frequency
Distortion vs Frequency
Caution: Do not operate continuously at RF power
input greater than 1 dB compression and do not "hot
switch" power levels greater than +13 dBm (Control =
0/+5Vdc).
Truth Table
*Control Input Tolerances are +/- 0.5 Vdc
DC blocking capacitors are required at ports RFC1,
RFC2, RF1, RF2. Choose value for lowest frequency
of operation.
Carrier at 900MHz
Carrier at 1900MHz
CTL
Input
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
(Vdc)
(dBm)
(dBm)
(dBm)
(dBm)
+5
20
23.5
19
22
Control Input
Input Third Order Intercept (dBm)
0 dBm Each Tone
(Vdc)
900 MHz
1900 MHz
+5
34.5
37.5
Control Input*
Control Current
(Typical)
Signal Path
A
(Vdc)
B
(Vdc)
Ia
(uA)
Ib
(uA)
RFC1
to
RFC2
RFC1
to
RF1
RFC2
to
RF2
0
+5
-65
65
ON
OFF
OFF
+5
0
65
-65
OFF
ON
ON
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
v03.0404
HMC199MS8
DUAL SPDT SWITCH
DC - 2.5 GHz
Absolute Maximum Ratings
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
RF Input Power V
CTL
= 0/+5V
+24 dBm
Control Voltage Range (A & B)
-0.5 to +7.5 Vdc
Channel Temperature
150 C
Thermal Resistance
172 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC199MS8
v03.0404
DUAL SPDT SWITCH
DC - 2.5 GHz
Eval Board Layout (Top View)
The circuit board used in the fi nal application should be generated with proper RF circuit design techniques.
Signal lines at the RF ports should have 50 ohm impedance. The evaluation circuit board shown above is avail-
able from Hittite Microwave Corporation upon request.
List of Material
*R1 & R2 = 100 Ohm.
These optional resistors will provide
more RF path to control circuit isolation.
Item
Description
J1 - J4
PC Mount SMA RF Connector
J5 - J8
DC Pin
C1 - C4
Chip Capacitor, 0402 Pkg. Choose value for lowest frequency of operation.
330 pF is provided on PCB.
R1 - R2
100 Ohm Resistor, 0402 Pkg.
U1
HMC199MS8 Bypass Switch
PCB*
103234 Evaluation PCB 1.5" x 1.5"
* Circuit Board Material: Rogers 4350
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
Typical Application Circuit
Notes:
1. Set A/B control to 0/+5V, Vdd = +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd = 5 to 7 Volts
applied to the CMOS logic gates.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines
lowest frequency of operation.
4. Highest RF signal power capability is achieved with Vdd = +7V and A/B set to 0/+7V.
HMC199MS8
v03.0404
DUAL SPDT SWITCH
DC - 2.5 GHz
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