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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
13
HMC239S8
GaAs MMIC SPDT SWITCH
DC - 2.5 GHz
v01.0801
General Description
Features
Functional Diagram
Low Insertion Loss: 0.4 dB
High Isolation: 35 dB
Fast Switching Speed: 2ns
High Input IP3: +50 dBm
Electrical Specifi cations,
T
A
= +25 C, Vctl = 0/-5V, 50 Ohm System
Typical Applications
The HMC239S8 is ideal for:
MMDS & WirelessLAN
Basestation Infrastructure
Portable Wireless
The HMC239S8 is a low-cost GaAs MMIC SPDT
switch in an 8-lead SOIC package. The switch
can control signals from DC to 2.5 GHz. It is
especially suited for low or medium power appli-
cations which require extremely fast switching
with minimal insertion loss. The two control volt-
ages require a minimal amount of DC current
which is optimal for battery powered radio sys-
tems. RF1 and RF2 are refl ective shorts when
"Off".
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 0.1 GHz
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
0.4
0.4
0.5
0.6
0.7
0.6
0.6
0.7
0.8
1.0
dB
dB
dB
dB
dB
Isolation
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
33
26
18
14
36
29
21
17
dB
dB
dB
dB
Return Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
18
17
15
21
21
20
dB
dB
dB
Input Power for 1dB Compression
0/-5V Control
0.5 - 1.0 GHz
0.5 - 2.5 GHz
25
23
29
27
dBm
dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
0/-5V Control
0.5 - 1.0 GHz
0.5 - 2.5 GHz
45
44
50
49
dBm
dBm
Switching Characteristics
DC - 2.5 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
2
10
ns
ns
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
13
SWITCHES - SMT
HMC239S8
-3
-2.5
-2
-1.5
-1
-0.5
0
0
1
2
3
INSERTION LOSS (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
0
1
2
3
ISOLATION (dB)
FREQUENCY (GHz)
RF1
RF2
-40
-30
-20
-10
0
0
1
2
3
RETURN LOSS (dB)
FREQUENCY (GHz)
Return Loss
Insertion Loss
Isolation
v01.0801
GaAs MMIC SPDT SWITCH
DC - 2.5 GHz
20
25
30
35
COMPRESSION (dBm)
-9
-8
-7
-6
-5
-4
CONTROL VOLTAGE (Vdc)
P1 dB at 900 MHz
P1 dB at 1900 MHz
P0.1 dB at 900 MHz
P0.1 dB at 1900 MHz
Input 0.1 and 1.0 dB
Compression vs. Control Voltage
45
50
55
IP3 (dBm)
-9
-8
-7
-6
-5
-4
CONTROL VOLTAGE (Vdc)
1900 MHz
900 MHz
Input Third Order
Distortion vs. Control Voltage
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
13
HMC239S8
Compression vs. Bias Voltage
Caution: Do not operate in 1 dB compression at power levels above
+30 dBm and do not "hot switch" power levels greater than +20 dBm
(Vctl= -5 Vdc).
v01.0801
Distortion vs. Bias Voltage
GaAs MMIC SPDT SWITCH
DC - 2.5 GHz
Truth Table
*Control Input Voltage Tolerances are 0.2 Vdc.
Control Input*
Control Current
Signal Path State
A
(Vdc)
B
(Vdc)
Ia
(uA)
Ib
(uA)
RF to
RF1
RF to
RF2
-5
0
-25
10
ON
OFF
0
-5
10
-25
OFF
ON
-6
0
-75
30
ON
OFF
0
-6
30
-75
OFF
ON
-7
0
-130
60
ON
OFF
0
-7
60
-130
OFF
OM
-8
0
-190
80
ON
OFF
0
-8
80
-190
OFF
ON
Carrier at 900 MHz
Carrier at 1900 MHz
Control
Input
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
Input Power
for 0.1 dB
Compression
Input Power
for 1.0 dB
Compression
(Vdc)
(dBm)
(dBm)
(dBm)
(dBm)
-5
25
29
23
27
-6
27
31
26
29
-8
29
33
28
32
Control
Input
Third Order Intercept (dBm)
+7 dBm Each Tone
(Vdc)
900 MHz
1900 MHz
-5
50
49
-8
53
51
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
13
SWITCHES - SMT
HMC239S8
v01.0801
Absolute Maximum Ratings
Outline Drawing
GaAs MMIC SPDT SWITCH
DC - 2.5 GHz
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Max. Input Power
(VCTL = 0/-8V)
0.05 GHz
0.5 - 2 GHz
+27 dBm
+34 dBm
Control Voltage Range (A & B)
+2 to -12 Vdc
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
13
HMC239S8
Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current.
v01.0801
Typical Application Circuit
GaAs MMIC SPDT SWITCH
DC - 2.5 GHz
B
A
GaAs SWITCH
CONTROL
74HC04 (CMOS)
-5 VDC
10K
TTL
OR
CMOS
74HCT04 (TTL)
COMPENSATED
DEVICES
CD4689
Vz=5.1V
Izt=50uA
VCC
GND
GND
VCC
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
13
SWITCHES - SMT
HMC239S8
v01.0801
Evaluation Circuit Board
Evaluation Circuit Board Layout Design Details
The circuit board used in the fi nal application should use RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to
that shown. A suffi cient number of VIA holes should be used to connect the top and bottom ground planes. The
evaluation circuit board as shown is available from Hittite upon request.
GaAs MMIC SPDT SWITCH
DC - 2.5 GHz
Layout Technique
Grounded Co-Planar Waveguide (GCPW)
Material
FR4
Dielectric Thickness
0.028" (0.71 mm)
50 Ohm Line Width
0.037" (0.94 mm)
Gap to Ground Edge
0.010" (0.25 mm)
Ground VIA Hole Diameter
0.014" (0.36 mm)
Connectors
SMA-F (EF - Johnson P/N 142-0701-806)
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