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Order Online at www.hittite.com
MIXERS - CHIP
5
HMC264
v01.0801
General Description
Features
Functional Diagram
Integrated LO Amplifi er: -4 dBm Input
Sub-Harmonically Pumped (x2) LO
High 2LO/RF Isolation: 40 dB
Small Size: 0.97mm x 1.32mm
Electrical Specifi cations,
T
A
= +25 C, As a Function of LO Drive & Vdd
Typical Applications
The HMC264 is ideal for:
Microwave Point to Point Radios
LMDS
SATCOM
The HMC264 chip is a sub-harmonically pumped
(x2) MMIC mixer with an integrated LO amplifi er
which can be used as an upconverter or down-
converter. The chip utilizes a GaAs PHEMT tech-
nology that results in a small overall chip area
of 1.28mm
2
. The 2LO to RF isolation is excellent
eliminating the need for additional fi ltering. The
LO amplifi er is a single bias (+3V to +4V) two
stage design with only -4dBm nominal drive
requirement. All data is measured with the chip in
a 50 ohm test fi xture connected via 0.025 mm (1
mil) diameter wire bonds of minimal length <0.31
mm (<12 mils).
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 32 GHz
Parameter
IF = 1 GHz
LO = 0 dBm & Vdd = +4V
IF = 1 GHz
LO = -4 dBm & Vdd = +4V
IF = 1 GHz
LO = -4 dBm & Vdd = +3V
Units
Min. Typ.
Max.
Min. Typ.
Max.
Min. Typ.
Max.
Frequency Range, RF
24 - 32
20 - 30
22 - 29
GHz
Frequency Range, LO
12 - 16
10 - 15
10.5 - 14.5
GHz
Frequency Range, IF
DC - 6
DC - 6
DC - 4
GHz
Conversion Loss
10
13
10
12
9
11
dB
Noise Figure (SSB)
10
13
10
12
9
11
dB
2LO to RF Isolation
29
35
29
40
18
22 ~ 30
dB
2LO to IF Isolation
32
40
29
40 ~ 50
25
30
dB
IP3 (Input)
5
13
5
13
3
10
dBm
1 dB Gain Compression (Input)
+3
+6
-3
0 ~ +4
-5
0 ~ +3
dBm
Supply Current (Idd)
28
28
25
mA
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Order Online at www.hittite.com
MIXERS - CHIP
5
v01.0801
-25
-20
-15
-10
-5
0
18
20
22
24
26
28
30
32
34
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
+85 C
-55 C
+25 C
-25
-20
-15
-10
-5
0
18
20
22
24
26
28
30
32
34
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
+85 C
-55 C
+25 C
Conversion Gain vs.
Temperature @ LO = -4 dBm, Vdd = +4V
HMC264
-25
-20
-15
-10
-5
0
18
20
22
24
26
28
30
32
34
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-4dBm
-8dBm
-6dBm
-2dBm
0dBm
-70
-60
-50
-40
-30
-20
-10
0
10
18
20
22
24
26
28
30
32
34
ISOLATION (dB)
RF FREQUENCY (GHz)
RF/IF
LO/IF
LO/RF
2LO/RF
2LO/IF
-25
-20
-15
-10
-5
0
18
20
22
24
26
28
30
32
34
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-4dBm
-6dBm
-2dBm
-70
-60
-50
-40
-30
-20
-10
0
10
18
20
22
24
26
28
30
32
34
ISOLATION (dB)
RF FREQUENCY (GHz)
RF/IF
LO/IF
LO/RF
2LO/RF
2LO/IF
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 32 GHz
Conversion Gain vs.
Temperature @ LO = -4 dBm, Vdd = +3V
Conversion Gain vs.
LO Drive @ Vdd = +4V
Conversion Gain vs.
LO Drive @ Vdd = +3V
Isolation @ LO = -4 dBm, Vdd = +4V
Isolation @ LO = -4 dBm, Vdd = +3V
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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Order Online at www.hittite.com
MIXERS - CHIP
5
v01.0801
HMC264
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 32 GHz
Input IP3 vs. LO Drive @ Vdd = +4V
-10
-5
0
5
10
15
20
18
20
22
24
26
28
30
32
34
THIRD ORDER INTERCEPT (dBm)
RF FREQUENCY (GHz)
-4 dBm
-6 dBm
-2 dBm
Input IP3 vs. LO Drive @ Vdd = +3V
-10
-5
0
5
10
15
20
18
20
22
24
26
28
30
32
34
THIRD ORDER INTERCEPT (dBm)
RF FREQUENCY (GHz)
-4 dBm
-6 dBm
-2 dBm
Input IP3 vs.
Temperature @ LO = -4 dBm, Vdd = +4V
Input IP3 vs.
Temperature @ LO = -4 dBm, Vdd = +3V
Input IP2 vs. LO Drive @ Vdd = +4V
Input IP2 vs. LO Drive @ Vdd = +3V
-10
-5
0
5
10
15
20
18
20
22
24
26
28
30
32
34
THIRD ORDER INTERCEPT (dBm)
RF FREQUENCY (GHz)
+25C
+85C
-55C
-10
-5
0
5
10
15
20
18
20
22
24
26
28
30
32
34
THIRD ORDER INTERCEPT (dBm)
RF FREQUENCY (GHz)
+25C
+85C
-55C
0
10
20
30
40
50
60
18
20
22
24
26
28
30
32
34
SECOND ORDER INTERCEPT (dBm)
RF FREQUENCY (GHz)
-4dBm
-2dBm
-6 dBm
0
10
20
30
40
50
60
18
20
22
24
26
28
30
32
34
SECOND ORDER INTERCEPT (dBm)
RF FREQUENCY (GHz)
-4dBm
-2dBm
-6 dBm
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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Order Online at www.hittite.com
MIXERS - CHIP
5
v01.0801
HMC264
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 32 GHz
Input IP2 vs.
Temperature @ LO = -4 dBm, Vdd = +4V
0
10
20
30
40
50
60
18
20
22
24
26
28
30
32
34
SECOND ORDER INTERCEPT (dBm)
RF FREQUENCY (GHz)
-55C
+25C
+85C
Input IP2 vs.
Temperature @ LO = -4 dBm, Vdd = +3V
0
10
20
30
40
50
60
18
20
22
24
26
28
30
32
34
SECOND ORDER INTERCEPT (dBm)
RF FREQUENCY (GHz)
-55C
+25C
+85C
P1dB vs.
Temperature @ LO = -4 dBm, Vdd = +4V
P1dB vs.
Temperature @ LO = -4 dBm, Vdd = +3V
-3
-2
-1
0
1
2
3
4
5
6
7
18
20
22
24
26
28
30
32
34
P1dB (dBm)
RF FREQUENCY (GHz)
+25 C
+85 C
-55 C
-3
-2
-1
0
1
2
3
4
5
6
7
18
20
22
24
26
28
30
32
34
P1dB (dBm)
RF FREQUENCY (GHz)
+25 C
+85 C
-55 C
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MIXERS - CHIP
5
v01.0801
HMC264
MxN Spurious Outputs
@ LO Drive = -4 dBm, Vdd = +4V
IF Bandwidth @ LO = -4 dBm, Vdd = +4V
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
9
10
IF CONVERSION GAIN (dB)
IF FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 32 GHz
nLO
mRF
5
4
3
2
1
0
-3
-2
-36
-1
-54
-22
-34
0
-15
+26
1
x
-30
-10
2
-54
-38
-66
3
-74
-67
RF = 30 GHz @ -10 dBm
LO = 13.5 GHz @ -4 dBm
All values in dBc below the IF power level
-25
-20
-15
-10
-5
0
16
18
20
22
24
26
28
30
32
34
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
Vdd=+3V
Vdd=+4V
-20
-15
-10
-5
0
0
5
10
15
20
25
30
35
40
RETURN LOSS (dB)
FREQUENCY (GHz)
RF
IF
LO
Upconverter Performance
Conversion Gain, LO = -4 dBm
Return Loss @ LO = -4 dBm, Vdd = +4V
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Order Online at www.hittite.com
MIXERS - CHIP
5
v01.0801
HMC264
Outline Drawing
(See Handling Mounting Bonding Note)
Absolute Maximum Ratings
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 32 GHz
RF / IF Input (Vdd = +4V)
+13 dBm
LO Drive (Vdd = +4V)
+13 dBm
Vdd
+5.5 Vdc
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004".
3. TYPICAL BOND PAD IS .004" SQUARE.
4. BOND PAD SPACING CENTER TO CENTER IS .006".
5. BACKSIDE METALLIZATION: GOLD.
6. BOND PAD METALLIZATION: GOLD.
7. BACKSIDE METAL IS GROUND.
8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
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MIXERS - CHIP
5
HMC264
v01.0801
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 32 GHz
MIC Assembly Techniques
Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin
fi lm substrates are recommended for bringing RF to and from the chip (Figure
1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the
die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar
with the surface of the substrate. One way to accomplish this is to attach the
0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3
mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer
capacitor (mounted eutectically or by conductive epoxy) placed no further than
0.762mm (30 mils) from the chip is recommended. The photo in fi gure 3 shows
a typical assembly for the HMC264 MMIC chip.
Figure 3: Typical HMC264 Assembly
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MIXERS - CHIP
5
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC264
v01.0801
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 32 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature
of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip
to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31 mm (12 mils).
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