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Электронный компонент: HMC279MS8G

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MICROWAVE CORPORATION
8 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC279MS8G
GaAs MMIC DRIVER AMPLIFIER
2.5 - 4.2 GHz

v02.0701
General Description
Features
Functional Diagram
The HMC279MS8G is a +3V GaAs MMIC driver ampli-
fi er covering the 2.5 - 4.2 GHz frequency range. The
device is packaged in a low cost, surface mount MSOP
plastic package with an exposed base paddle for
improved RF ground. The amplifi er provides greater
than 36dB gain and +14 dBm P1dB while operating
from a single +3V supply at only 60mA. No external
components are required and the amplifi er occupies
less than 0.023 sq. in. (14.6 sq. mm). All data is taken
with the amplifi er assembled into a 50 ohm test fi xture
with the exposed ground paddle connected to RF
ground.
High Gain: 36 dB
Psat Output Power: +14 dBm
Single Supply: +3V @ 60 mA
Ultra Small Package: MSOP8G
No External Matching Required
Electrical Specifi cations,
T
A
= +25 C, Vdd= +3V
Typical Applications
The HMC279MS8G is ideal for:
2.6 - 2.7 GHz MMDS
3.5 GHz Wireless Local Loop
3.7 - 4.2 GHz Satellite
(Receive and Transmit Bands)
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
2.5 - 3.7
3.7 - 4.2
GHz
Gain
33
36
40
35
38
41
dB
Gain Variation over Temperature
0.03
0.045
0.03
0.045
dB/C
Input Return Loss
5
10
6
11
dB
Output Return Loss
5
9
8
13
dB
Reverse Isolation
44
52
42
48
dB
Output Power for 1 dB Compression (P1dB)
8
12
9
12
dBm
Saturated Output Power (Psat)
11
14
11
14
dBm
Output Third Order Intercept (IP3)
17
22
15
20
dBm
Noise Figure
5
8
5
8
dB
Supply Current (Idd)
60
60
mA
MICROWAVE CORPORATION
8 - 3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
45
1
2
3
4
5
6
RESPONSE (dB)
FREQUENCY (GHz)
S22
S11
S21
20
22
24
26
28
30
32
34
36
38
40
42
44
2
2.5
3
3.5
4
4.5
5
GAIN (dB)
FREQUENCY (GHz)
S21 +85 C
S21 +25 C
S21 -40 C
-70
-60
-50
-40
-30
-20
-10
0
2
2.5
3
3.5
4
4.5
5
ISOLATION (dB)
FREQUENCY (GHz)
S12 +85 C
S12 +25 C
S12 -40 C
-25
-20
-15
-10
-5
0
2
2.5
3
3.5
4
4.5
5
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
S11 +25 C
S11 +85 C
S11 -40 C
0
2
4
6
8
10
2
2.5
3
3.5
4
4.5
5
NOISE FIGURE (dB)
FREQUENCY (GHz)
+85 C
+25 C
-40 C
-25
-20
-15
-10
-5
0
2
2.5
3
3.5
4
4.5
5
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
S22 +85 C
S22 -40 C
S22 +25 C
HMC279MS8G
Reverse Isolation vs. Temperature
Input Match vs. Temperature
GaAs MMIC DRIVER AMPLIFIER
2.5 - 4.2 GHz

v02.0701
Broadband Gain & Return Loss
Gain vs. Temperature
Noise Figure vs. Temperature
Output Match vs. Temperature
MICROWAVE CORPORATION
8 - 4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
9
10
11
12
13
14
15
16
17
2
2.5
3
3.5
4
4.5
5
Psat (dBm)
FREQUENCY (GHz)
+85 C
+25 C
-40 C
9
10
11
12
13
14
15
16
17
2
2.5
3
3.5
4
4.5
5
P1dB (dBm)
FREQUENCY (GHz)
+85 C
+25 C
-40 C
HMC279MS8G
Psat vs. Temperature
P1dB vs. Temperature
GaAs MMIC DRIVER AMPLIFIER
2.5 - 4.2 GHz

v02.0701
Power Compression @ 3.5 GHz
Power Compression @ 4 GHz
Output IP3 vs. Temperature
Spur Data @ P1dB Output (3.8 GHz)
0
5
10
15
20
25
30
35
40
45
-40
-35
-30
-25
-20
-15
OUTPUT POWER (dBm)
GAIN (dB)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
45
-40
-35
-30
-25
-20
-15
OUTPUT POWER (dBm)
GAIN (dB)
INPUT POWER (dBm)
Frequency (GHz)
Temperature
3.4
3.8
4.2
-40 C
23.80
22.13
23.92
+25 C
24.00
23.42
20.82
+85 C
25.58
24.83
22.23
All levels in dBm
Spur Data at P1dB
2FO
3FO
4FO
5FO
6FO
-31
-46.5
-56.5
-92.3
-102.33
All power levels are in dBc with respect to the output power (FO)
MICROWAVE CORPORATION
8 - 5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
Drain Bias Voltage (Vdd)
+8.0 Vdc
RF Input Power (Vdd = + 3.0 Vdc)
-10 dBm
Channel Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 20 mW/C above 85 C)
1.3 W
Thermal Resistance
(channel to ground paddle)
50 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
HMC279MS8G
GaAs MMIC DRIVER AMPLIFIER
2.5 - 4.2 GHz

v02.0701
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
MICROWAVE CORPORATION
8 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC279MS8G
GaAs MMIC DRIVER AMPLIFIER
2.5 - 4.2 GHz

v02.0701
Evaluation PCB
The circuit board used in the fi nal application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown. A
suffi cient number of VIA holes should be used to con-
nect the top and bottom ground planes. The evalua-
tion circuit board shown is available from Hittite upon
request.
List of Material
Item
Description
J1, J2
PC Mount SMA Connector
J3
DC Pin
U1
HMC279MS8G Amplifi er
PCB*
102810 Evaluation Board
*Circuit Board Material: Roger 4350