MICROWAVE CORPORATION
8 - 8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC280MS8G
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
v03.0703
General Description
Features
Functional Diagram
Psat Output Power: +24 dBm
Output IP3: +38 dBm
High Gain: 18 dB
Single Supply: +3.6V
Ultra Small Package: MSOP8G
Electrical Specifi cations,
T
A
= +25 C, Vdd= +3.6V
Typical Applications
The HMC280MS8G is ideal for:
UNII & HiperLAN
ISM
The HMC280MS8G is a +3.6V GaAs MMIC power
amplifi er covering 5 to 6 GHz. The device is pack-
aged in a low cost, surface mount 8 lead MSOP
plastic package with an exposed base paddle for
improved RF ground and thermal dissipation. The
amplifi er provides 18 dB of gain and 24 dBm
Psat while operating from a single positive supply.
External component requirements are minimal
with the amplifi er occupying less than 0.023 sq.
in. (14.6 sq. mm). All data is taken with the
amplifi er assembled into a 50 ohm test fi xture
with the exposed base paddle connected to RF
ground. For transmit / receive applications use
with either the HMC223MS8 or HMC224MS8
SPDT switches.
Parameter
Min.
Typ.
Max.
Units
Frequency Range
5.0 - 6.0
GHz
Gain
14
19
23
dB
Gain Flatness
1.0
dB
Input Return Loss
8 12
dB
Reverse Isolation
40
44
dB
Output Power for 1 dB Compression (P1dB)
5.0 - 5.5 Ghz
5.0 - 6.0 Ghz
20
18
23
22
dBm
Saturated Output Power (Psat)
21
24
dBm
Output Third Order Intercept (IP3)
33
38
dBm
Noise Figure
13
dB
Supply Current (Idd)(Vdd1 = Vdd2 = +3.6 Vdc)
480
mA
MICROWAVE CORPORATION
8 - 9
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-15
-10
-5
0
5
10
15
20
4
4.5
5
5.5
6
6.5
7
S11
S21
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
30
4
4.5
5
5.5
6
6.5
7
-40C
+25C
+70C
GAIN (dB)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
4.5
5
5.5
6
5V
3.6V
3.3V
3V
2.7V
OUTPUT PSAT (dBm)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
4.5
5
5.5
6
-40C
+25C
+70C
OUTPUT PSAT (dBm)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
4.5
5
5.5
6
5V
3.6V
3.3V
3V
2.7V
OUTPUT P1dB (dBm)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
4.5
5
5.5
6
-40C
+25C
+70C
OUTPUT P1dB (dBm)
FREQUENCY (GHz)
HMC280MS8G
Psat vs. Supply Voltage
Psat vs. Temperature @ 3.6V
v03.0703
Broadband Gain & Return Loss
Gain vs. Temperature @ 3.6V
P1dB vs. Supply Voltage
P1dB vs. Temperature @ 3.6V
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
MICROWAVE CORPORATION
8 - 10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
20
25
30
35
40
45
50
4.5
5
5.5
6
-40C
+25C
+70C
OIP3 (dBm)
FREQUENCY (GHz)
20
25
30
35
40
45
50
4.5
5
5.5
6
-40C
+25C
+70C
OIP3 (dBm)
FREQUENCY (GHz)
HMC280MS8G
Output IP3 vs. Temperature @ 3.6V
Reverse Isolation @ 3.6V
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
v03.0703
Power Compression @ 5.25 GHz
Output IP3 vs Supply Voltage @ 6.0 GHz
0
5
10
15
20
25
30
-10
-5
0
5
10
15
Output Power (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
20
25
30
35
40
45
50
2.5
3
3.5
4
4.5
5
5.5
-40C
+25C
+70C
OIP3 (dBm)
Vdd SUPPLY VOLTAGE (Vdc)
Output IP3 vs. Temperature @ 5.0V
-60
-50
-40
-30
-20
-10
0
4.5
5
5.5
6
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
8 - 11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC280MS8G
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
v03.0703
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Drain Bias Voltage (Vdd1, Vdd2)
+8.0 Vdc
RF Input Power (RFin) (Vdd = +3.6 Vdc)
+20 dBm
Channel Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 41 mW/C above 85 C)
2.67 W
Thermal Resistance
(channel to ground paddle )
24.3 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
MICROWAVE CORPORATION
8 - 12
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC280MS8G
v03.0703
List of Material
The circuit board used in the fi nal application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected directly
to the ground plane similar to that shown. A suffi cient
number of via holes should be used to connect the top
and bottom ground planes. The evaluation circuit board
shown is available from Hittite upon request.
Reco
mmended PCB Layout
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
Item
Description
J1, J2
PC Mount SMA Connector
J3, J4, J5
DC Pins
C1, C2
1000 pF Capacitor, 0603 Pkg.
C3, C4
100 pF Capacitor, 0402 Pkg.
L1
3.9 nH Inductor, 0402 Pkg.
U1
HMC280MS8G Amplifi er
PCB*
103104 Evaluation Board
*Circuit Board Material: Roger 4350
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