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MICROWAVE CORPORATION
8 - 22
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC286
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
v02.0204
General Description
Features
Functional Diagram
2.4 GHz LNA
Noise Figure: 1.7 dB
Gain: 19 dB
Single Supply: +3V
No External Components
Ultra Small SOT26 Package
Electrical Specifi cations,
T
A
= +25 C, Vdd= +3V
Typical Applications
The HMC286 is ideal for:
BlueTooth
Home RF
802.11 WLAN Radios
PCMCIA Platforms
The HMC286 is a low cost Low Noise Amplifi er (LNA)
for 2.3 to 2.5 GHz spread spectrum applications. The
LNA provides 19 dB of gain and a 1.7 dB noise fi gure
from a single positive +3V power supply that consumes
only 8.5mA. The typical output 1 dB compression point
is +6 dBm at 2.4 GHz. The compact LNA design uti-
lizes on-chip matching for repeatable gain and noise
fi gure performance. In addition, eliminating the external
matching circuitry also reduces the overall size of the
LNA function. The HMC286 was designed to meet the
size constraints of PCMCIA platforms and uses the
SOT26 package that occupies 0.118" x 0.118", which
makes it a small fully integrated solution that can be
easily implemented with other 2.4 GHz ASICs.
Parameter
Min.
Typ.
Max.
Units
Frequency Range
2.3 - 2.5
GHz
Gain
16
19
dB
Gain Variation Over Temperature
0.015
0.03
dB/C
Gain Flatness
1.25
dB
Noise Figure
1.7
2.5
dB
Input Return Loss
12
dB
Output Return Loss
4.5
dB
Output 1 dB Compression (P1dB)
2
6
dBm
Output Third Order Intercept (IP3)
9
12
dBm
Supply Current (Idd)
8.5
12.5
mA
MICROWAVE CORPORATION
8 - 23
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-25
-20
-15
-10
-5
0
5
10
15
20
25
1.6
1.8
2
2.2
2.4
2.6
2.8
3
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
14
15
16
17
18
19
20
21
22
23
24
2.2
2.3
2.4
2.5
2.6
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
2.2
2.3
2.4
2.5
2.6
+25 C
+85 C
-40 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
2.2
2.3
2.4
2.5
2.6
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
2.2
2.3
2.4
2.5
2.6
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC286
Gain vs. Temperature
v02.0204
Broadband Noise Figure
Output Return Loss vs. Temperature
Broadband Gain & Return Loss
Noise Figure vs. Temperature
Input Return Loss vs. Temperature
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
MICROWAVE CORPORATION
8 - 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC286
v02.0204
-5
0
5
10
15
2.2
2.3
2.4
2.5
2.6
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
-10
-5
0
5
10
15
20
25
-30
-25
-20
-15
-10
-5
Gain
Output Power
POUT (dBm), GAIN (dB)
FREQUENCY (GHz)
0
5
10
15
20
2.2
2.3
2.4
2.5
2.6
+25 C
+85 C
-40 C
THI
RD ORDER I
N
TERCEPT (dBm)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
2.2
2.3
2.4
2.5
2.6
+25 C
+85 C
-40 C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
Output P1dB vs. Temperature
Power Compression @ 2.4 GHz
Output IP3 vs. Temperature
Reverse Isolation vs. Temperature
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
MICROWAVE CORPORATION
8 - 25
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC286
v02.0204
Outline Drawing
Absolute Maximum Ratings
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Drain Bias Voltage (Vdd)
+7.0 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)
0 dBm
Channel Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 6.35 mW/C above 85 C)
0.413 W
Thermal Resistance
(channel to lead)
157 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
MICROWAVE CORPORATION
8 - 26
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC286
v02.0204
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is AC coupled and matched to 50 Ohms.
2, 5, 6
GND
These pins must be connected to RF/DC ground.
3
VDD
Power supply voltage.
4
RFOUT
This pin is AC coupled and matched to 50 Ohms.
Pad Descriptions
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