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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC311ST89
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
v00.0204
General Description
Features
Functional Diagram
The HMC311ST89 is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
DC to 6 GHz amplifi er. Packaged in an industry
standard SOT89, the amplifi er can be used as
either a cascadable 50 Ohm gain stage or to drive
the LO of HMC mixers with up to +16.5 dBm output
power. The HMC311ST89 offers 16 dB of gain
and an output IP3 of +31.5 dBm while requiring
only 54 mA from a +5V supply. The Darlington
feedback pair used results in reduced sensitivity
to normal process variations and yields excellent
gain stability over temperature while requiring a
minimal number of external bias components.
P1dB Output Power: +15.5 dBm
Output IP3: +31.5 dBm
Gain: 16 dB
50 Ohm I/O's
Industry Standard SOT89 Package
Typical Applications
The HMC311ST89 is an ideal RF/IF gain block
or LO buffer amplifi er for:
Cellular / PCS / 3G
Fixed Wireless & WLAN
CATV & Cable Modem
Microwave Radio
Electrical Specifi cations,
Vs= 5.0 V, Rbias= 22 Ohm, T
A
= +25 C
Parameter
Min.
Typ.
Max.
Units
Gain
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
14.0
13.0
12.5
16.0
15.0
14.5
dB
dB
dB
Gain Variation Over Temperature
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
0.004
0.007
0.012
0.007
0.012
0.016
dB/ C
dB/ C
dB/ C
Return Loss Input / Output
DC - 2.0 GHz
2.0 - 5.0 GHz
5.0 - 6.0 GHz
8
7
8
dB
dB
dB
Reverse Isolation
DC - 6.0 GHz
20
dB
Output Power for 1 dB Compression (P1dB)
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
13.5
12.0
10.0
15.5
15.0
13.0
dBm
dBm
dBm
Output Third Order Intercept (IP3)
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
31.5
30
27
24
dBm
dBm
dBm
dBm
Noise Figure
DC - 4.0 GHz
4.0 - 6.0 GHz
4.5
5
dB
Supply Current (Icq)
54
mA
Note: Data taken with broadband bias tee on device output.
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC311ST89
Output Return Loss vs. Temperature
v00.0204
Broadband Gain & Return Loss
Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Noise Figure vs. Temperature
-20
-15
-10
-5
0
5
10
15
20
1
2
3
4
5
6
7
8
9
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
0
1
2
3
4
5
6
7
8
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
+25C
+85C
-40C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
+25C
+85C
-40C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
8
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
+25C
+85C
-40C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
Power Compression @ 6 GHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Power Compression @ 1 GHz
Gain, Power, OIP3 & Supply Current vs.
Supply Voltage @ 1 GHz
HMC311ST89
v00.0204
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
4
6
8
10
12
14
16
18
0
1
2
3
4
5
6
7
8
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
4
6
8
10
12
14
16
18
0
1
2
3
4
5
6
7
8
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
-4
-2
0
2
4
6
8
10
12
14
16
18
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-4
-2
0
2
4
6
8
10
12
14
16
18
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
10
12
14
16
18
20
22
24
26
28
30
32
34
0
1
2
3
4
5
6
7
8
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
10
20
30
40
50
60
70
80
4.5
4.75
5
5.25
5.5
Gain
P1dB
Psat
OIP3
Icq
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Ic
q (mA)
Vs (Vdc)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+7 Volts
RF Input Power (RFin)(Vcc = +3.9 Vdc)
+10 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 5.21 mW/C above 85 C)
0.34 W
Thermal Resistance
(junction to lead)
191 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
HMC311ST89
v00.0204
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC311ST89
v00.0204
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Application Circuit
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
Recommended Component Values
Component
Frequency (MHz)
50
900
1900
2200
2400
3500
5200
5800
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
3.3 nH
3.3 nH
C1, C2
0.01 F
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias
> 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.9
Rbias
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