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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC341LC3B
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
v00.0905
General Description
Features
Functional Diagram
The HMC341LC3B is a GaAs PHEMT MMIC Low
Noise Amplifi er housed in a leadless RoHS comp-
liant SMT package. Operating from 21 to 29 GHz,
the amplifi er provides 13 dB of gain and a noise
fi gure of 2.5 dB from a single +3.0 V supply. The RF
I/Os are DC blocked and matched to 50 Ohms
requiring no external components. The HMC341LC3B
eliminates the need for wire bonding, allowing the
use of surface mount manufacturing techniques.
2.5 dB Noise Figure
13 dB Gain
+3.0 V @ 35 mA Supply
50 Ohm Matched Input/Output
RoHS Compliant 3x3 mm SMT Package
Electrical Specifications,
T
A
= +25 C, Vdd = +3V, Idd = 35 mA
Typical Applications
The HMC341LC3B is ideal for:
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
Test Equipment & Sensors
Military End-Use
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
21 - 24
24 - 26
26 - 29
GHz
Gain
10.5
13.5
10
13
9
12
dB
Gain Variation Over Temperature
0.016
0.025
0.016
0.025
0.016
0.025
dB/ C
Noise Figure
3.25
5
3
3.5
2.5
3
dB
Input Return Loss
10
11
9
dB
Output Return Loss
14
10
9
dB
Output Power for 1 dB Compression (P1dB)
8
8.5
8.5
dBm
Saturated Output Power (Psat)
11
11.5
11.5
dBm
Output Third Order Intercept (IP3)
19
19
19
dBm
Supply Current (Idd) (Vdd = +3V)
35
35
35
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
Broadband Gain & Return Loss
Gain vs. Temperature
Noise Figure vs. Temperature
Output IP3 vs. Temperature
HMC341LC3B
v00.0905
-25
-20
-15
-10
-5
0
5
10
15
20
21
22
23
24
25
26
27
28
29
30
31
32
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
20
21
22
23
24
25
26
27
28
29
30
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
-20
-15
-10
-5
0
20
21
22
23
24
25
26
27
28
29
30
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
20
21
22
23
24
25
26
27
28
29
30
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
6
7
8
9
10
11
12
13
14
15
16
20
21
22
23
24
25
26
27
28
29
30
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
20
21
22
23
24
25
26
27
28
29
30
+25C
+85C
-40C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Power Compression @ 25 GHz
P1dB vs. Temperature
Psat vs. Temperature
Gain, Power & Noise Figure
vs. Supply Voltage @ 25 GHz
Reverse Isolation vs. Temperature
0
2
4
6
8
10
12
14
20
21
22
23
24
25
26
27
28
29
30
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
20
21
22
23
24
25
26
27
28
29
30
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
2
4
6
8
10
12
14
20
21
22
23
24
25
26
27
28
29
30
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
HMC341LC3B
v00.0905
0
2
4
6
8
10
12
14
16
2.75
3
3.25 3.5 3.75
4
4.25 4.5 4.75
5
5.25 5.5
Gain
P1dB
Psat
Noise Figure
GAIN (dB), P1dB (d
Bm), Psat (dBm),
NOI
SE FI
GURE (dB)
Vdd Supply Voltage (Vdc)
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+5.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)
+5 dBm
Channel Temperature
175 C
Continuous Pdiss (T= 85 C)
(derate 5.43 mW/C above 85 C)
0.489 W
Thermal Resistance
(channel to ground paddle)
184 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Vdd (Vdc)
Idd (mA)
+2.7
34
+3.0
35
+4.0
38
+5.0
41
Typical Supply Current vs. Vdd
Note: Amplifi er will operate over full voltage ranges shown above.
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM C
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
HMC341LC3B
v00.0905
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Number
Function
Description
Interface Schematic
1
Vdd
Power Supply Voltage for the amplifi er. External bypass
capacitors of 100 pF, 1000pF, and 2.2 F are required.
2, 3, 7-9
N/C
No connection required. These pins may be connected
to RF/DC ground without affecting performance.
4, 6, 10, 12
GND
Package bottom has an exposed metal paddle that
must also be connected to RF/DC ground.
5
RFIN
This pin is AC coupled and matched
to 50 Ohms from 21 - 29 GHz.
11
RFOUT
This pin is AC coupled and matched
to 50 Ohms from 21 - 29 GHz.
Pin Descriptions
Application Circuit
Component
Value
C1
100 pF
C2
1,000 pF
C3
2.2 F
HMC341LC3B
v00.0905
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
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