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1 - 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC342
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
v00.0301
General Description
Features
Functional Diagram
The HMC342 chip is a GaAs MMIC Low Noise
Amplifi er (LNA) which covers the frequency range
of 13 to 25 GHz. The chip can easily be inte-
grated into Multi-Chip Modules (MCMs) due to its
small (2.14 mm2) size. The chip utilizes a GaAs
PHEMT process offering 20 dB gain from a single
bias supply of + 3.0V @ 36 mA with a noise fi gure
of 3.5 dB. All data is with the chip in a 50 ohm
test fi xture connected via 0.025 mm (1 mil) diam-
eter wire bonds of minimal length 0.31 mm (<12
mils).
Noise Figure : 3.5 dB
Gain: 20 dB
Single Supply : +3V @ 36 mA
Small Size: 1.06 mm x 2.02 mm
Electrical Specifi cations,
T
A
= +25 C, Vdd = +3V
Typical Applications
The HMC342 is ideal for:
Microwave Point-to-Point Radios
Millimeterwave Point-to-Point Radios
VSAT & SATCOM
Parameter
Min.
Typ.
Max.
Units
Frequency Range
13 - 25
GHz
Gain
16
21
26
dB
Gain Variation Over Temperature
.03
.04
dB/C
Noise Figure
3.5
4.5
dB
Input Return Loss
6
13
dB
Output Return Loss
6
14
dB
Reverse Isolation
39
45
dB
Output Power for 1dB Compression (P1dB)
1
5
dBm
Saturated Output Power (Psat)
3
8
dBm
Output Third Order Intercept (IP3)
8
13
dBm
Supply Current (Idd)(Vdd = +3V)
41
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
10
15
20
25
30
12
14
16
18
20
22
24
26
+25 C
-55 C
+85 C
GAIN (dB)
FREQUENCY (GHz)
10
15
20
25
30
12
14
16
18
20
22
24
26
+25 C
-55 C
+85 C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
12
14
16
18
20
22
24
26
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
12
14
16
18
20
22
24
26
S11
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
12
14
16
18
20
22
24
26
+25 C
-55 C
+85 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
12
14
16
18
20
22
24
26
+25 C
-55 C
+85 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC342
Noise Figure
vs. Temperature @ Vdd = +3V
Return Loss @ Vdd = +3V
Return Loss @ Vdd = +5V
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
v00.0301
Gain vs. Temperature @ Vdd = +3V
Gain vs. Temperature @ Vdd = +5V
Noise Figure
vs. Temperature @ Vdd = +5V
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
-70
-60
-50
-40
-30
-20
-10
0
12
14
16
18
20
22
24
26
Vdd = +3V
Vdd = +5V
ISOLATION (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
12
14
16
18
20
22
24
26
+25 C
-55 C
+85 C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
12
14
16
18
20
22
24
26
+25 C
-55 C
+85 C
P1dB (dBm)
FREQUENCY (GHz)
5
10
15
20
25
30
12
14
16
18
20
22
24
26
+25 C
-55 C
+85 C
IP3 (dBm)
FREQUENCY (GHz)
5
10
15
20
25
30
12
14
16
18
20
22
24
26
+25 C
-55 C
+85 C
IP3 (dBm)
FREQUENCY (GHz)
Output IP3 @ Vdd = +3V
Output IP3 @ Vdd = +5V
Isolation
HMC342
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
v00.0301
Gain & Noise Figure
vs. Supply Voltage @ 18 GHz
Output P1dB @ Vdd = +3V
Output P1dB @ Vdd = +5V
20.8
20.9
21
21.1
21.2
21.3
21.4
2.8
3
3.2
3.4
3.6
3.8
4
2.5
3
3.5
4
4.5
5
5.5
GAIN dB)
NOISE FIGURE (dB)
Vdd SUPPLY VOLTAGE (Vdc)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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AMPLIFIERS - CHIP
1
Pad Number
Function
Description
Interface Schematic
1
RF Input
This pad is AC coupled and matched to 50 Ohm from 13 - 25 GHz
2
RF Output
This pad is AC coupled and matched to 50 Ohm from 13 - 25 GHz
3
Vdd
Power supply for the 2-stage amplifi er. An external RF bypass capacitor
of 100 - 300 pF is required. The bond length to the capacitor should be
as short as possible. The ground side of the capacitor should be con-
nected to the housing ground.
Outline Drawing
HMC342
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
v00.0301
Absolute Maximum Ratings
Pad Descriptions
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004"
3. TYPICAL BOND IS .004" SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Drain Bias Voltage (Vdd)
+5.5 Vdc
RF Input Power (RFin)(Vdd = +3.0 Vdc)
0 dBm
Channel Temperature
175 C
Continuous Pdiss (T = 85 C)
(derate 3.62 mW/C above 85 C)
0.326 W
Thermal Resistance
(channel to die bottom)
276 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-
dling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bring-
ing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-
to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by
conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.
Assembly Diagrams
HMC342
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
v00.0301
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