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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
3
FREQ.
DIVIDERS - CHIP
HMC361
GaAs HBT MMIC
DIVIDE-BY-2, DC - 11.0 GHz
v03.0404
General Description
Features
Functional Diagram
The HMC361 is a low noise Divide-by-2 Static
Divider with InGaP GaAs HBT technology that
has a small size of 0.686 mm x 1.143 mm. This
device operates from DC (with a square wave
input) to 11 GHz input frequency with a single
+5.0V DC supply. The low additive SSB phase
noise of -148 dBc/Hz at 100 kHz offset helps the
user maintain good system noise performance.
Ultra Low SSB Phase Noise: -148 dBc/Hz
Wide Bandwidth
Output Power: 3 dBm
Single DC Supply: +5V
Small Size: 0.686 mm x 1.143 mm
Typical Applications
Prescaler for DC to X Band PLL Applications:
Satellite Communication Systems
Fiber Optic
Pt-Pt and Pt-MPt Radios
VSAT
Electrical Specifi cations,
T
A
= +25 C, 50 Ohm System, Vcc = 5V
1. Divider will operate down to DC for square-wave input signal.
2. When operated in high power mode (pin 10 connected to ground).
Parameter
Conditions
Min.
Typ.
Max.
Units
Maximum Input Frequency
11
12
GHz
Minimum Input Frequency
Sine Wave Input. [1]
0.2
0.5
GHz
Input Power Range
Fin = 1 to 9 GHz
-15
>-20
+10
dBm
Fin = 9 to 11 GHz
-10
>-15
+2
dBm
Output Power [2]
Fin = 6 GHz
0
3
dBm
Fin = 9 GHz
-5
dBm
Fin = 11 GHz
-8
dBm
Reverse Leakage
Both RF Outputs Terminated
45
dB
SSB Phase Noise (100 kHz offset)
Pin = 0 dBm, Fin = 6 GHz
-148
dBc/Hz
Output Transition Time
Pin = 0 dBm, Fout = 882 MHz
100
ps
Supply Current (Icc) [2]
83
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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3
FREQ.
DIVIDERS - CHIP
-30
-20
-10
0
10
20
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
INPUT POWER (dBm)
INPUT FREQUENCY (GHz)
-30
-20
-10
0
10
20
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Min Pin +25 C
Max Pin +25 C
Min Pin +85 C
Max Pin +85 C
Min Pin -55 C
Max Pin -55 C
INPUT POWER (dBm)
INPUT FREQUENCY (GHz)
-10
-8
-6
-4
-2
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
+25 C
+85 C
-55 C
OUTPUT POWER (dBm)
INPUT FREQUENCY (GHz)
-160
-140
-120
-100
-80
-60
-40
-20
0
10
2
10
3
10
4
10
5
10
6
10
7
SSB PHASE NOISE (dBc/Hz)
OFFSET FREQUENCY (Hz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC361
SSB Phase Noise
Performance, Pin= 0 dBm, T= 25 C
Input Sensitivity Window, T= 25 C
GaAs HBT MMIC
DIVIDE-BY-2, DC - 11.0 GHz
Output Power vs. Temperature
Recommended
Operating Window
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Pfeedthru
3rd Harmonic
OUTPUT LEVEL (dBm)
INPUT FREQUENCY (GHz)
Output Harmonic
Content, Pin= 0 dBm, T= 25 C
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Both Output Ports Terminated
One Output Port Terminated
POWER LEVEL (dBm)
INPUT FREQUENCY (GHz)
Input Sensitivity Window vs. Temperature
Reverse Leakage, Pin= 0 dBm, T= 25 C
v03.0404
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
3
FREQ.
DIVIDERS - CHIP
-500
-400
-300
-200
-100
0
100
200
300
400
500
22.7 22.9 23.1 23.3 23.5 23.7 23.9 24.1 24.3 24.5 24.7
AMPLITUDE (mV)
TIME (nS)
Output Voltage Waveform,
Pin= 0 dBm, Fout= 882 MHz, T= 25 C
GaAs HBT MMIC
DIVIDE-BY-2, DC - 11.0 GHz
HMC361
Absolute Maximum Ratings
Outline Drawing
Typical Supply Current vs Vcc
Note: Divider will operate over full voltage range shown above
v03.0404
RF Input (Vcc = +5V)
+13 dBm
Vcc
+5.5V
VLogic
Vcc -1.6V to Vcc -1.2V
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Vcc (V)
Icc (mA)
4.75
74
5.0
83
5.25
89
NOTES;
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE 0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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3
FREQ.
DIVIDERS - CHIP
Pad Number
Function
Description
Interface Schematic
1
IN
RF Input 180 out of phase with pad 3 for differential operation.
AC ground for single ended operation.
2
N/C
Not Connected
4, 5, 6
VCC
Supply Voltage 5V 0.25V can be applied to pad 4, 5, or 6.
3
IN
RF Input must be DC blocked.
7, 11, 12
GND
Ground: These pads are grounded.
8
OUT
Divided Output
9
OUT
Divided output 180 out of phase with pad 8.
GaAs HBT MMIC
DIVIDE-BY-2, DC - 11.0 GHz
HMC361
Pad Description
v03.0404
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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3
FREQ.
DIVIDERS - CHIP
Pad Number
Function
Description
Interface Schematic
10
PWR SEL
In the low power mode, the power select pin is left fl oating.
By grounding this pin, the output power is increased by
approximately 6 dB.
13
PWR DWN
The power down pin is grounded for normal operation.
Applying 5 volts to this pin will power down this device.
14
DISABLE
The disable pin is grounded for normal operation.
Applying 5 volts to this pin will disable the input buffer amplifi er.
GaAs HBT MMIC
DIVIDE-BY-2, DC - 11.0 GHz
HMC361
Truth Table
Pad Description
(continued)
v03.0404
Function
Pin
5V
GND
Float
DISABLE
14
Output Off
Output On
X
PWR
DWN
13
Power
Down
Power Up
X
PWR
SEL
10
x
High
Power Output
Low
Power Output
X = State not permitted.
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
3
FREQ.
DIVIDERS - CHIP
Assembly Diagram
GaAs HBT MMIC
DIVIDE-BY-2, DC - 11.0 GHz
HMC361
AC coupling capacitors.
To +5V VCC Supply
(Bypassed via 10 uF Capacitor).
AC coupling capacitors.
Optional AC coupled
differential input. Should
be AC grounded for
single ended operation.
Optional AC coupled
differential output. For best
single ended reverse leakage
performance, this port should
be terminated into 50 ohm.
This port should be grounded
for normal operation. Applying
+5V to this port will disable the
input buffer amplifi er.
This port should be grounded
for normal operation. Applying
+5V to this port will power
down the device.
For high power output, this
port should be bonded to
ground. For low power output,
this port should be fl oating.
v03.0404
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature
of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip
to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31 mm (12 mils).
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